Structural Manipulation of Layered TiS₂ to TiS₃ Nanobelts through Niobium Doping for High‐Performance Supercapacitors

Abstract

Unraveling the influence of incorporating transition metal elements on layered transition metal chalcogenides for energy storage application remains a challenge. Herein, niobium (Nb)‐doped layered titanium disulfide (TiS2) is applied to generate novel compounds Ti1−xNbxS2 (x=0.05, 0.1 and 0.20). Interestingly, TiS3 nanobelts are formed in the resulting materials, which is proven by systematic morphological and structural characterization. It has been found that Nb‐doped TiS2 compounds demonstrate superior electrochemical capacitive activity, reaching up to a 63.2 % increase in gravimetric capacitance in 1 M Na2SO4 electrolyte compared with that of the Nb‐free TiS2. This remarkably enhanced capacity behavior is attributed to Nb doping resulting a structural transition of Layered TiS2 to TiS3 nanobelts.

Enhanced Photocatalytic Hydrolysis Performance of Chiral Molecule Loaded Titanium Disulfide Nanosheets

“…[12] Here, two-dimensional sulfur compounds with the graphene-like structure were selected. [13][14][15][16] They were narrow band gap semiconductor materials charac-terized by a rapid increase of bandgap value to the nearinfrared (NIR) energy range in the visible region, which endows them with unique electrical and optical properties. [17] These characteristics make them promising candidate materials for optical devices.…”

“…Thus, the performance can be improved by changing these properties [12] . Here, two‐dimensional sulfur compounds with the graphene‐like structure were selected [13–16] . They were narrow band gap semiconductor materials characterized by a rapid increase of bandgap value to the near‐infrared (NIR) energy range in the visible region, which endows them with unique electrical and optical properties [17] .…”