Structural investigations of hydrogenated epitaxial graphene grown on 4H-SiC (0001)

Tokarczyk, Mateusz; Kowalski, G.; Możdżonek, M.; Borysiuk, J.; Stępniewski, R.; Strupiński, Włodek; Ciepielewski, P.; Baranowski, J. M.

doi:10.1063/1.4848815

Cited by 26 publications

(67 citation statements)

References 41 publications

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“…We have used this setup to measure the diracted intensity around standard angular positions for (002) reection of graphite and (001) reection of GO assemblies. We have also directed our attention to the angular position of (10) [19,20].…”

Section: X-ray Diractionmentioning

confidence: 99%

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Structural and Electronic Properties of Graphene Oxide and Reduced Graphene Oxide Papers Prepared by High Pressure and High Temperature Treatment

et al. 2014

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Graphene paper prepared by new proprietary method involving high pressure and high temperature treatment in the reduction process show new possibilities in this area. Dierent phase content: multilayer and single layer graphene stacks recorded in this study for RGO samples are accompanied by the specic electric and optical parameters. We have found that process temperatures above 900• C play crucial role in structural and other properties. For the process temperature around 2000 • C we found the onset of the graphitization in the samples.

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Section: X-ray Diractionmentioning

confidence: 99%

“…Carbon nanotube (CNT) Buckypaper [19] and GO paper [1012] have been already extensively studied even before the onset of graphene era.…”

Section: Structural and Electronic Properties Of Graphenementioning

confidence: 99%

Structural and Electronic Properties of Graphene Oxide and Reduced Graphene Oxide Papers Prepared by High Pressure and High Temperature Treatment

et al. 2014

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“…14). Up to this moment we considered only the literature reports devoted to propane-argon assisted growth, but there is also some interesting experimental data on CVD growth of graphene by using hydrogen as a carrier gas [114,126,129,131,132,136]. Michon et al [114,126,129] demonstrated the possibility of direct growth of graphene on 6H-SiC (0001) and 3C-SiC/Si substrates.…”

Section: Growth Of Graphene On Sic Using External Sourcesmentioning

confidence: 99%

“…The most widely studied among the carbon sources is propane [114,121,124,126,[128][129][130][131][132][133][134][135][136][137]. There is only a few works devoted to ethene [125], toluene [127] and xylene [127] as carbon sources for graphene growth on silicon carbide.…”

Section: Growth Of Graphene On Sic Using External Sourcesmentioning

confidence: 99%

“…There is a lot of excellent reports in literature dealing with deposition of graphene from external sources on metallic surfaces (Cu, Ni, Ir, etc) and on dielectric wafers (SiC, sapphire, Si, etc.). Following the main purpose of this review paper, we focus only on the CVD and MBE growth of graphene on silicon carbide [114,121,[123][124][125][126][127][128][129][130][131][132][133][134][135][136][137][138][139][140][141]. Therefore, the aim of this subsection is twofold: (i) to understand the main difference between thermal decomposition of silicon carbide and bottom-up growth of graphene on SiC and (ii) to extensively review the literature concerning the CVD and MBE growth processes with participation of SiC substrate.…”

Section: Growth Of Graphene On Sic Using External Sourcesmentioning

confidence: 99%

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Combining graphene with silicon carbide: synthesis and properties – a review

Shtepliuk

Khranovskyy

Yakimova

2016

Semicond. Sci. Technol.

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Being a true two-dimensional crystal, graphene possesses a lot of exotic properties that would enable unique applications. Integration of graphene with inorganic semiconductors, e.g. SiC promotes the birth of a class of hybrid materials which are highly promising for development of novel operations, since they combine the best properties of two counterparts in the frame of one hybrid platform. As a specific heterostructure, graphene on SiC performs strongly dependent on the synthesis method and the growth modes.In this paper a comprehensive review of the most relevant studies of graphene growth methods and mechanisms on SiC substrates has been carried out. The aim is to elucidate the basic physical processes that are responsible for the formation of graphene on SiC.First, an introduction is made covering some intriguing and not so often discussed properties of graphene. Then, we focus on integration of graphene with SiC which is facilitated by the nature of SiC to assume graphitization. As concerning the synthesis methods we discuss thermal decomposition of SiC, chemical vapor deposition and molecular beam epitaxy stressing that the first technique is the most common one when SiC substrates are used. In addition, we briefly appraise graphene synthesis via metal mediated carbon segregation.We address in detail the main aspects of the substrate effect such as substrate face polarity, offcut, kind of polytype and nonpolar surfaces on the growth of graphene layers. A comparison of graphene grown on the polar faces is made. In particular, growth of graphene on Si-face SiC is critically analyzed concerning growth kinetics and growth mechanisms taking into account the specific characteristics of SiC (0001) surfaces, such as the step-terrace structure and the unavoidable surface reconstruction upon heating. In all subtopics obstacles and solutions are featured. We complete the review with a short summary and concluding remarks. Outline

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Periodic Nanoarray of Graphene pn‐Junctions on Silicon Carbide Obtained by Hydrogen Intercalation

Karakachian

Rosenzweig

Nguyen

et al. 2022

Adv Funct Materials

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Graphene pn‐junctions offer a rich portfolio of intriguing physical phenomena. They stand as the potential building blocks for a broad spectrum of future technologies, ranging from electronic lenses analogous to metamaterials in optics, to high‐performance photodetectors important for a variety of optoelectronic applications. The production of graphene pn‐junctions and their precise structuring at the nanoscale remains to be a challenge. In this work, a scalable method for fabricating periodic nanoarrays of graphene pn‐junctions on a technologically viable semiconducting SiC substrate is introduced. Via H‐intercalation, 1D confined armchair graphene nanoribbons are transformed into a single 2D graphene sheet rolling over 6H‐SiC mesa structures. Due to the different surface terminations of the basal and vicinal SiC planes constituting the mesa structures, different types of charge carriers are locally induced into the graphene layer. Using angle‐resolved photoelectron spectroscopy, the electronic band structure of the two graphene regions are selectively measured, finding two symmetrically doped phases with p‐type being located on the basal planes and n‐type on the facets. The results demonstrate that through a careful structuring of the substrate, combined with H‐intercalation, integrated networks of graphene pn‐junctions could be engineered at the nanoscale, paving the way for the realization of novel optoelectronic device concepts.

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Structural investigations of hydrogenated epitaxial graphene grown on 4H-SiC (0001)

Cited by 26 publications

References 41 publications

Structural and Electronic Properties of Graphene Oxide and Reduced Graphene Oxide Papers Prepared by High Pressure and High Temperature Treatment

Structural and Electronic Properties of Graphene Oxide and Reduced Graphene Oxide Papers Prepared by High Pressure and High Temperature Treatment

Combining graphene with silicon carbide: synthesis and properties – a review

Periodic Nanoarray of Graphene pn‐Junctions on Silicon Carbide Obtained by Hydrogen Intercalation

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