Structural investigation of Fe silicide films grown by pulsed laser deposition

Abstract

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Ultraviolet and electron radiation induced fragmentation of adsorbed ferrocene

“…[4][5][6] The surface photochemistry of ferrocene is, perhaps, better investigated on other surfaces than silicon. Iron deposited on Si͑111͒ can form a silicide, [7][8][9][10][11][12] and if there is dissolution of iron into the bulk of silicon, it may be difficult to detect the iron by photoemission. A number of ferrocene-silicon organometallic complexes have now been identified 13 suggesting that the surface chemistry of ferrocene on Si͑111͒ may be very complex.…”

Ablation plasma ion implantation experiments: Measurement of Fe implantation into Si

“…Such iron silicide layers have been deposited in previous PLD experiments. 11 For zero accelerating voltage with low energy ͑electron volt͒ laser plasma ions there is no damage layer below the surface of the Si. Figure 4 presents cross-sectional TEM data for ablation plasma iron ions implanted into silicon with 2000 pulses at a peak applied voltage of Ϫ10 kV for a total pulse duration of 10 s. The most important difference from the baseline film is that APII sample shows a damage layer ͑b͒ that extends some 7.6 nm below the original surface of the silicon ͓͑b͒-͑c͒ interface͔.…”

“…1-10 In conventional PIII, a gaseous precursor ͑most typically nitrogen͒ is ionized to serve as the source of ions for implantation. Pulsed ͑ablative͒ laser deposition ͑PLD͒ is also an accepted technique for deposition of thin films, 11 in some cases using a bias voltage to alter the properties of ͑e.g., diamond-like carbon͒ films. 12 In ablation plasma ion implantation ͑APII͒, 13,14 a solid target is ablated by a laser; the resulting plasma plume is the source of ions, which are accelerated to high energy by the pulsed, negatively biased substrate.…”

Solution Growth and Optical Characterization of β-FeSi2 Bulk Crystals

“…14,15) Usually, β-FeSi 2 thin films grown on Si substrate contain a number of small grain boundaries, a rough β-FeSi 2 /Si interface and stress from the substrate. 16,17) It is well known that the crystalline disorder causes the Urbach's tail below the fundamental absorption edge. 18) In addition, recent ab initio calculation predicted that the strained β-FeSi 2 has a direct band gap structure.…”