Structural interpretation of the infrared and Raman spectra of glasses in the alloy system<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ge</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">S</mml:mi></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>

Lucovsky, G.; Galeener, F. L.; Keezer, R.C.; Geils, R. H.; Six, H. A.

doi:10.1103/physrevb.10.5134

Cited by 444 publications

(185 citation statements)

References 26 publications

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“…The spectrum at Ge 46% was obtained using thin film prepared by sputtering in the present study. The qualitative change in the spectra is consistent with the results of Lucovsky et al [1] and Kotsalas and Raptis [6]. A background component has been subtracted for the spectra at Ge 40 and 46 %.…”

Section: Methodssupporting

confidence: 80%

“…In the past few decades there has been an extensive effort to investigate the structure of the glassy Gechalcogenides. Results of several measurements have shown that a structural transition occurs with increasing Ge composition 1,2 . According to the results of Mössbauer spectroscopy by Boolchand et al 2 , at high Ge concentration there are three structural phases, A, B and C, in these glasses.…”

Section: Introductionmentioning

confidence: 99%

“…In addition to that, in very recent years great attention has been paid to a narrow region near the critical composition, the "intermediate phase window", , where specific changes due to a self-organization occur [3,4]. For Ge-Se system, the region is between Ge 20 and 26 % [3].On the other hand, in the Ge-rich region from Ge 33 to 43 %, a much qualitative change is observed in the Raman spectra [1]. Indeed, it can be related to the structural transformations from A to B and from B to C phase.…”

Section: Introductionmentioning

confidence: 99%

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Structural development in Ge-rich Ge–S glasses

Sakaguchi

Ténné

Mitkova

2009

Journal of Non-Crystalline Solids

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This is an author-produced, peer-reviewed version of this article. AbstractThe Raman spectra of Ge-S glasses in the Ge-rich region from Ge 33 to 46 % have been investigated in order to know the structural development of the network glasses. From the detailed curve fits, we have found that there is an unassigned peak at 410 cm -1 and it becomes larger with increasing Ge composition. To clarify the structural origin of the peak, we virtually constructed the atomic arrangement of the glassy state starting from the crystalline state through the liquid state and changed the composition gradually depleting the medium in sulfur. From the consideration of the structural modeling and the atomic orbital theory, we suggest that single Ge-S chain is a probable structural origin of the peak.

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Section: Methodssupporting

confidence: 80%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Structural development in Ge-rich Ge–S glasses

Sakaguchi

Ténné

Mitkova

2009

Journal of Non-Crystalline Solids

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“…On the experimental side germanium sulfides [20] and selenides [21] have been studied in the glassy state (bulk glasses) using Raman spectroscopy for x up to 0.45 and 0.4, respectively, while amorphous thin films of germanium tellurides [10] have been studied over a much wider GeTe 3 Ge, 37.5 % GeTe 2 Ge 2 , 25% GeTeGe 3 , and 6.25% GeGe 4 .…”

mentioning

confidence: 99%

Raman scattering study of the a-GeTe structure and possible mechanism for the amorphous to crystal transition

Andrikopoulos¹,

Yannopoulos²,

Voyiatzis³

et al. 2006

J. Phys.: Condens. Matter

214

174

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We report on an inelastic (Raman) light scattering study of the local structure of amorphous GeTe films. A detailed analysis of the temperature-reduced Raman spectra has shown that appreciable structural changes occur as a function of temperature. These changes involve modifications of atomic arrangements such as to facilitate the rapid amorphous-to-crystal transformation, which is the major advantage of phase-change materials used in optical data storage media. A particular structural model, supported by polarization analysis, is proposed being compatible with the experimental data as regards both the structure of a-GeTe and the crystallization transition. The remarkable difference between the Raman spectrum of the crystal and the glass can thus naturally be accounted for.

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“…The relative proportions of these tetrahedra at the S:Ge ratio = 1.5 are: 31.64% GeS 4 ; 42.18% GeS 3 Ge; 21.09% GeS 2 Ge 2 ; 4.69% GeSGe 3 ; and 0.39% GeGe 4 . 47 Only one third of the tetrahedra are GeS 4 units with full tetrahedral, T d , symmetry. The reduction of the T d symmetry to C 3v and C 2v in GeS 3 Ge 1 and GeS 2 Ge 2 units lifts the degeneracy and causes the appearance of bands in addition to those expected for the GeS 4/2 tetrahedra, complicating the interpretation.…”

Section: B Micro-raman Spectroscopy -Elucidating Structural Changes mentioning

confidence: 99%

Reversible migration of silver on memorized pathways in Ag-Ge40S60 films

et al. 2015

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Reversible and reproducible formation and dissolution of silver conductive filaments are studied in Ag-photodoped thin-film Ge 40 S 60 subjected to electric fields. A tip-planar geometry is employed, where a conductive-atomic-force microscopy tip is the tip electrode and a silver patch is the planar electrode. We highlight an inherent "memory" effect in the amorphous chalcogenide solid-state electrolyte, in which particular silver-ion migration pathways are preserved "memorized" during writing and erasing cycles. The "memorized" pathways reflect structural changes in the photodoped chalcogenide film. Structural changes due to silver photodoping, and electrically-induced structural changes arising from silver migration, are elucidated using Raman spectroscopy. Conductive filament formation, dissolution, and electron (reduction) efficiency in a lateral device geometry are related to operation of the nano-ionic Programmable Metallization Cell memory and to newly emerging chalcogenide-based lateral geometry MEMS technologies. The methods in this work can also be used for qualitative multi-parameter sampling of metal/amorphous-chalcogenide combinations, characterizing the growth/dissolution rates, retention and endurance of fractal conductive filaments, with the aim of optimizing devices. C 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.

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Structural interpretation of the infrared and Raman spectra of glasses in the alloy systemGe1−xSx

Cited by 444 publications

References 26 publications

Structural development in Ge-rich Ge–S glasses

Structural development in Ge-rich Ge–S glasses

Raman scattering study of the a-GeTe structure and possible mechanism for the amorphous to crystal transition

Reversible migration of silver on memorized pathways in Ag-Ge40S60 films

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