Structural, FTIR and photoluminescence properties of ZnS:Cu thin films by chemical bath deposition method

Muthukumaran, S.; Kumar, Munish

doi:10.1016/j.matlet.2012.11.091

Cited by 71 publications

(31 citation statements)

References 19 publications

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“…chemical bath deposition but without a surface capping agent. In addition, several reports have been published on optical studies of metal (Cu, Mn, Ni and Co) doped ZnS [17][18][19][20][21] thin films by the CBD method. However, to the best of our knowledge, magnetic studies on iron doped CBD ÀZnS thin films have never been reported before.…”

Section: Introductionmentioning

confidence: 99%

Chemical bath deposition of Fe-doped ZnS thin films: Investigations of their ferromagnetic and half-metallic properties

Akhtar

Malik

Alghamdi

et al. 2015

Materials Science in Semiconductor Processing

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a b s t r a c tThe nanocrystalline thin films of Fe-doped ZnS were deposited onto glass substrates by a chemical bath deposition (CBD) method. X-ray diffraction patterns reveal the formation of cubic zinc blende phase of ZnS. The incorporation of iron in ZnS lattice changed the lattice parameters of the ZnS structure. The purity of doped films was confirmed by the absence of secondary phases or iron clusters. SEM images show the growth of almost spherical clusters with slight change in size between un-doped and Fe-doped ZnS samples. The M-H curves indicate that doped ZnS thin films exhibit room temperature ferromagnetism. The magnetization properties as a function of applied field and doping concentration were studied in detail. The density functional calculations were performed using Full Potential Linearized Augmented Plane Wave (FP-LAPW) approach as is employed in Elk-code. The strong p-d hybridization between sulfur and iron resulted in ferromagnetic stable state and half-metallicity. The half-metallic iron doped ZnS thin films have potential applications in future spintronic devices.

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Section: Introductionmentioning

confidence: 99%

Chemical bath deposition of Fe-doped ZnS thin films: Investigations of their ferromagnetic and half-metallic properties

Akhtar

Malik

Alghamdi

et al. 2015

Materials Science in Semiconductor Processing

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“…These wide bands give orange-red emissions that are a consequence of the overlapping of at least two peaks, one that corresponds to Cu centers-formed if the Zn site is replaced by a Cu + ion- (Khomchenko et al 2005) and the low energy peak that is caused by interstitial Zn and S, which are deep defects that decay in the red region of the spectrum (Chauhan et al 2013(Chauhan et al , 2014. The systematic red shift of the band confirms the presence of Cu 2+ ions in the ZnS matrix (Muthukumaran and Kumar 2013). The highest photocatalytic activity was achieved for the sample with 12 at.% Cu; this amount of impurities provided enough localized states to facilitate the electron transport to the conduction band for the photocatalytic process without compromising it with the radiative recombination.…”

Section: Photoluminescence (Pl) Spectroscopymentioning

confidence: 84%

Photocatalytic Semiconductors

2015

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“…The intensity of Cu/ZnS decreases with increase in Cu concentrations. Muthukumaran et al . have observed the hexagonal wurtzite structure in Cu‐doped ZnS thin films.…”

Section: Resultsmentioning

confidence: 99%

“…The doped ZnS thin films have been developed by material research communities by using various techniques such as spray pyrolysis, chemical routes, conventional solid state reaction method, and electron beam evaporation . Table presents a full survey of Cu‐doped ZnS (Cu/ZnS) prepared by aforesaid techniques . It shows preparation of Cu/ZnS films with various copper concentrations along with substrate temperatures, crystal structures, and their optical properties.…”

Section: Introductionmentioning

confidence: 99%

Studies of Cu-doped ZnS thin films prepared by sputtering technique

Sreedhar

Reddy

Bera

et al. 2016

Surf. Interface Anal.

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Radio frequency magnetron sputtering technique has been used to deposit Cu‐doped ZnS thin films on glass and n‐type Si(100) substrates at room temperature. Crystalline structure, surface morphology, and elemental oxidation states have been studied by X‐ray diffraction, field emission scanning electron microscopy, atomic force microscopy, and X‐ray photoelectron spectroscopy. Ultraviolet–visible spectroscopy has been employed to measure the transmittance, reflectance, and absorbance properties of coated films. The deposited thin films crystallize in zinc blende or sphalerite phases as proved by X‐ray diffraction analysis. The intensity of diffraction peaks decreases with increasing the dopant concentrations. The predominant diffraction peak related to (111) plane of ZnS is observed at 28.52° along with other peaks. The peak positions are shifted to higher angles with an increase of Cu concentrations. X‐ray photoelectron spectroscopy studies show that Cu is present in +1 oxidation state. Transmittance, reflectance, and absorbance properties of the deposited films have a slight variation with dopant concentrations. Copyright © 2016 John Wiley & Sons, Ltd.

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Structural, FTIR and photoluminescence properties of ZnS:Cu thin films by chemical bath deposition method

Cited by 71 publications

References 19 publications

Chemical bath deposition of Fe-doped ZnS thin films: Investigations of their ferromagnetic and half-metallic properties

Chemical bath deposition of Fe-doped ZnS thin films: Investigations of their ferromagnetic and half-metallic properties

Photocatalytic Semiconductors

Studies of Cu-doped ZnS thin films prepared by sputtering technique

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