Structural features and thermoelectric performance of Sb- and Bi-doped Cu2SnSe3 compounds

Deng, Songqiang; Jiang, Xianyan; Chen, Lili; Zhang, Zi-Ye; Qi, N. D.; Wu, Yichu; Tang, Xinfeng; Chen, Zhiquan

doi:10.1007/s12598-021-01724-1

Cited by 14 publications

(9 citation statements)

References 40 publications

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“…In this context, copper-based chalcogenides constitute an important class of semiconducting materials. [1][2][3] Among them, Cu 2 GeS 3 (CGS) is of particular interest since it possesses unique physicochemical and optoelectronic properties. It has been proposed as an alternative to technologically well-established materials such as CdTe, PbTe, CuInS 2 , and Cu(In,Ga)S 2 that are derived either from toxic elements like Cd and Pb or scarce elements like In, Ga, and Te.…”

Section: Introductionmentioning

confidence: 99%

A facile synthetic route toward phase-pure colloidal Cu₂GeS₃ nanostructures mediated through metal xanthate precursors

et al. 2022

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Section: Introductionmentioning

confidence: 99%

A facile synthetic route toward phase-pure colloidal Cu₂GeS₃ nanostructures mediated through metal xanthate precursors

et al. 2022

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“…Because the inhibition of formation of Cu vacancies could increase the μ of Cu 2 SnSe 3 and enhancement of TDOS around VBM can elevate m d * , introducing the beneficial extrinsic dopants into Cu 2 SnSe 3 appropriately could improve its weighted mobility μ w = μ false( m normald * / m normale false) 2 / 3 . Thus, we calculated μ w of the pristine and doped Cu 2 SnSe 3 at T = 300–850 K by using the experimental electrical resistivity and thermopower in the reported literature, ,,,− as shown in Figure a. One can see from Figure a that Cu 2 SnSe 3 with V Cu has smaller μ w than that of pristine one, which is consistent with our theoretical analyses that V Cu is detrimental to the charge transport of Cu 2 SnSe 3 .…”

Section: Resultsmentioning

confidence: 99%

Theoretical Study of Intrinsic and Extrinsic Point Defects and Their Effects on Thermoelectric Properties of Cu₂SnSe₃

et al. 2023

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Current understanding of the intrinsic point defects and potential extrinsic dopants in p-type Cu 2 SnSe 3 is limited, which hinders further improvement of its thermoelectric performance. Here, we show that the dominant intrinsic defects in Cu 2 SnSe 3 are Cu Sn and V Cu under different chemical conditions, respectively. The presence of V Cu will damage the hole conduction network and reduce hole mobility. Besides, we find that the substitution of Al, Ga, In, Cd, Zn, Fe, and Mn for Sn can inhibit the formation of V Cu ; introducing Cu Sn , Fe Sn , Mn Sn , and Ni Cu defects can significantly enhance electronic density of states near the Fermi level due to the contribution of 3d orbitals. Therefore, increasing the Cu content and/or introducing the above beneficial dopants appropriately are expected to cause enhancement of carrier mobility and/or thermopower of Cu 2 SnSe 3 . Furthermore, introducing

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“…Shi et al reported that the Cu–Se network determines electronic conduction while the electrical contribution of the Sn site is very weak . Sn site doping with In, Mn, Ge, Zn, Bi, Fe, Ga, and so forth has been proved to be effective for the optimization of TE performance in Cu 2 SnSe 3 -based compounds. Furthermore, the introduction of alloying elements at Cu , and Se sites results in reduced lattice thermal conductivity by enhanced phonon scattering by strain field fluctuation.…”

Section: Introductionmentioning

confidence: 99%

Enhanced Thermoelectric Properties of Cu₂SnSe₃-Based Materials with Ag₂Se Addition

Cheng

Zhu

Yang

et al. 2022

ACS Appl. Mater. Interfaces

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In this work, (Ag, In)-co-doped Cu 2 SnSe 3 -based compounds are prepared using a self-propagating high-temperature synthesis process. Ag 2 Se and as-synthesized (Ag, In)-co-doped Cu 2 SnSe 3 -based powders are mixed in a proportion according to the formula of Cu 1.85 Ag 0.15 Sn 0.91 In 0.09 Se 3 /x Ag 2 Se (x = 0, 3, 4, and 5%), which is followed by a subsequent plasma-activated sintering (PAS) to obtain consolidated composite bulks. A sandwich experiment is designed to reveal the evolution of the microstructure and phase composition of the composite samples during the PAS process. We investigate the reaction mechanism between Ag 2 Se and Cu 2 SnSe 3 -based matrix as well as the influence of Ag 2 Se on the phase composition, microstructure, and thermoelectric transport properties of the composites. Ag 2 Se addition is proven to be effective to improve Ag solubility in the Cu 1.85 Ag 0.15 Sn 0.91 In 0.09 Se 3 matrix and introduce a CuSe secondary phase and an Ag-rich phase at grain boundaries. The electrical conductivity of Cu 1.85 Ag 0.15 Sn 0.91 In 0.09 Se 3 /x Ag 2 Se (x = 0, 3, 4, and 5%) composites decreases while the Seebeck coefficient increases with increasing Ag 2 Se addition, resulting in an optimized power factor. Moreover, benefiting from the collective phonon scattering at various defects induced by Ag 2 Se addition, the composite samples exhibit significantly suppressed lattice thermal conductivity, which reaches as low as 0.11 W m −1 K −1 at 700 K for the x = 5% sample. A peak figure-of-merit (ZT) of 1.26 at 750 K and an average ZT of 0.75 at 300−800 K are obtained for Cu 1.85 Ag 0.15 Sn 0.91 In 0.09 Se 3 /5% Ag 2 Se. This work provides an efficient way to improve average ZT values of Cu 2 SnSe 3 -based compounds for promising power generation at intermediate temperatures.

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Structural features and thermoelectric performance of Sb- and Bi-doped Cu2SnSe3 compounds

Cited by 14 publications

References 40 publications

A facile synthetic route toward phase-pure colloidal Cu₂GeS₃ nanostructures mediated through metal xanthate precursors

A facile synthetic route toward phase-pure colloidal Cu₂GeS₃ nanostructures mediated through metal xanthate precursors

Theoretical Study of Intrinsic and Extrinsic Point Defects and Their Effects on Thermoelectric Properties of Cu₂SnSe₃

Enhanced Thermoelectric Properties of Cu₂SnSe₃-Based Materials with Ag₂Se Addition

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Structural features and thermoelectric performance of Sb- and Bi-doped Cu2SnSe3 compounds

Cited by 14 publications

References 40 publications

A facile synthetic route toward phase-pure colloidal Cu2GeS3 nanostructures mediated through metal xanthate precursors

A facile synthetic route toward phase-pure colloidal Cu2GeS3 nanostructures mediated through metal xanthate precursors

Theoretical Study of Intrinsic and Extrinsic Point Defects and Their Effects on Thermoelectric Properties of Cu2SnSe3

Enhanced Thermoelectric Properties of Cu2SnSe3-Based Materials with Ag2Se Addition

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A facile synthetic route toward phase-pure colloidal Cu₂GeS₃ nanostructures mediated through metal xanthate precursors

A facile synthetic route toward phase-pure colloidal Cu₂GeS₃ nanostructures mediated through metal xanthate precursors

Theoretical Study of Intrinsic and Extrinsic Point Defects and Their Effects on Thermoelectric Properties of Cu₂SnSe₃

Enhanced Thermoelectric Properties of Cu₂SnSe₃-Based Materials with Ag₂Se Addition