Structural Evolution and Microwave Dielectric Properties ofxZn0.5Ti0.5NbO4-(1–x)Zn0.15Nb0.3Ti0.55O2Ceramics

Yang, Hongcheng; Zhang, Shuren; Zhang, Xing; Li, Enzhu

doi:10.1021/acs.inorgchem.8b00873

Cited by 108 publications

(23 citation statements)

References 54 publications

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“…Combined with Table , more specifically, B 1u mode at 168.87 cm −1 gives the majority contribution to the dielectric constant (31.06%) and dielectric loss (45.01%). The calculated dielectric properties via the LTPC mode is closer to experimental value, indicating that the majority dielectric contributions at microwave frequency should be associated with the absorptions of structural phonon oscillation . Mentionable is that an ultra‐high Q × f of 122807 GHz calculated is larger than measured value of 72885 GHz, which is reasonable because the experimental results contain extrinsic loss, such as densification, grain size, grain boundary, technology process.…”

Section: Resultssupporting

confidence: 50%

Intrinsic dielectric properties of columbite ZnNb₂O₆ ceramics studied by P–V–L bond theory and Infrared spectroscopy

et al. 2019

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In this study, intrinsic dielectric properties of ZnNb2O6 ceramics were investigated using P–V–L chemical bond theory and far‐infrared reflectivity spectra. The largest bond ionicity and bond susceptibility of Nb–O bonds suggest that the dielectric polarizability is mainly determined by Nb–O bonds. Relative permittivity, calculated via P–V–L bond theory, is close to experimental value determined using TE011 mode. The Nb–O bonds are also crucial for the structural stability. According to far‐infrared reflectivity spectra and complex dielectric function analysis, a relatively consistent result between calculated and measured dielectric properties, fit using classical damped oscillator mode, indicate that the B1u mode at 168.87 cm−1 provides majority contribution to the dielectric properties.

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Section: Resultssupporting

confidence: 50%

Intrinsic dielectric properties of columbite ZnNb₂O₆ ceramics studied by P–V–L bond theory and Infrared spectroscopy

et al. 2019

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“…Dielectric loss at microwave frequency originates from the anharmonic vibration of the lattice and is closely related to lattice energy 52 . According to the P‐V‐L theory, total lattice energy ( U cal ) can be calculated using the following equations 53 :

U_{cal} = \sum_{μ} U_{b}^{μ}

U_{b}^{μ} = U_{italicbc}^{μ} + U_{italicbi}^{μ}

U_{italicbc}^{μ} = 2100 m^{μ} \frac{{(Z_{+}^{μ})}^{1.64}}{{(d^{μ})}^{0.75}} f_{c}^{μ}

U_{italicbi}^{μ} = 1270 \frac{(m^{μ} + n^{μ}) Z_{+}^{μ} Z_{‐}^{μ}}{d^{μ}} (1 ‐ \frac{0.4}{d^{μ}}) f_{i}^{μ}

where

U_{bi}^{μ}

and

U_{bc}^{μ}

are the lattice energies of the ionic and covalent parts of the μ bond, respectively;

Z_{+}^{μ}

and

Z_{‐}^{μ}

are the valence states of cations and anions in μ bond, respectively; and

f_{i}^{μ}

and

f_{c}^{μ}

are the bond ionicity and bond covalency of μ bond, respectively. The

f_{i}^{μ}

for M CuSi 4 O 10 ceramics is shown in Table .…”

Section: Resultsmentioning

confidence: 99%

Phase evolution, crystal structure, and microwave dielectric properties of gillespite‐type ceramics

et al. 2020

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A gillespite‐structured MCuSi4O10 (M = Ba1‐xSrx, Sr1‐xCax) ceramics with tetrahedral structure (P4/ncc) were prepared by solid‐state reaction method. X‐ray diffraction and thermogravimetry with differential scanning calorimetry (TG‐DSC) were employed to study the phase synthesis process of BaCuSi4O10. Pure BaCuSi4O10 phase was obtained at 1075°C and decomposed into BaSiO3, BaCuSi2O6, and SiO2 when calcined at 1200°C. The relationships between the crystal structure and microwave dielectric properties of MCuSi4O10 ceramics were revealed based on the Rietveld refinement and P‐V‐L complex chemical bond theory. The dielectric constant (εr) decreased linearly with decreasing total bond susceptibility and ionic polarizability. Quality factor (Q × f) was closely dependent on bond strength and lattice energy. The temperature coefficient of resonant frequency (τf) was controlled by the stability of [CuO4]6− plane in MCuSi4O10. Optimum microwave dielectric properties were obtained for SrCuSi4O10 when sintered at 1100°C for 3 hours with a εr of 5.59, a Q × f value of 82 252 GHz, and a τf of −41.34 ppm/°C. Thus, SrCuSi4O10 is a good candidate for millimeter‐wave devices.

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“…Generally, the sintering characteristics of single‐phase ceramics are always affected by chemical bond properties, especially covalency . For ixiolite ZnTiNb 2 O 8 , the structure is resolved into the sum of binary crystals:

\begin{matrix} Z n T i N b_{2} O_{8} & = Z n O_{2} + T i O_{2} + N b_{2} O_{4} \\ = Z n_{1 / 3} O_{2 / 3}^{1} + Z n_{1 / 3} O_{2 / 3}^{2} + Z n_{1 / 3} O_{2 / 3}^{3} \\ + T i_{1 / 3} O_{2 / 3}^{1} + T i_{1 / 3} O_{2 / 3}^{2} + T i_{1 / 3} O_{2 / 3}^{3} \\ + N b_{2 / 3} O_{4 / 3}^{1} + N b_{2 / 3} O_{4 / 3}^{2} + N b_{2 / 3} O_{4 / 3}^{3} \end{matrix}

In this system, Zn 2+ , Ti 4+ , (Al 0.5 Nb 0.5 ) 4+ and Nb 5+ occupy the same Wyckoff position 4c, and the coordination numbers of the cations and anions are 6 and 3, respectively. Considering the valence electron numbers of the cations (Z Zn = 2, Z Ti/AlNb = 4 and Z Nb = 5), the corresponding effective valence electron numbers of the anions are Z O = −1, −2 and −2.5.…”

Section: Resultsmentioning

confidence: 99%

Bond theory, terahertz spectra, and dielectric studies in donor‐acceptor (Nb‐Al) substituted ZnTiNb₂O₈ system

Luo

et al. 2019

J Am Ceram Soc

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As a donor and acceptor separately, Nb 5+ and Al 3+ are used to substitute Ti 4+ in the ixiolite ZnTiNb 2 O 8 system for the first time. The dielectric responses in the terahertz range of this system are initially studied based on the data from terahertz time-domain transmitted spectroscopy. Combined with ligand field theory, the formation of a secondary phase of ZnAl 2 O 4 is reasonably explicated. Then, the origins of the lower dielectric loss and the terahertz wave absorption coefficient are determined to be the high chemical bond covalency and effective phase control. For the composition of ZnTi 0.85 (Al 0.5 Nb 0.5 ) 0.15 Nb 2 O 8 sintered at 1180°C, a low dielectric loss (<5 × 10 −3 @ 0.5 THz) and absorption coefficient (<10/cm @ 0.5 THz) are obtained, which make this kind of material propitious for developing terahertz dielectric devices. K E Y W O R D S complex chemical bond theory, covalency, dielectric properties, donor-acceptor substituted, microwave and terahertz

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Structural Evolution and Microwave Dielectric Properties ofxZn_0.5Ti_0.5NbO₄-(1–x)Zn_0.15Nb_0.3Ti_0.55O₂Ceramics

Cited by 108 publications

References 54 publications

Intrinsic dielectric properties of columbite ZnNb₂O₆ ceramics studied by P–V–L bond theory and Infrared spectroscopy

Intrinsic dielectric properties of columbite ZnNb₂O₆ ceramics studied by P–V–L bond theory and Infrared spectroscopy

Phase evolution, crystal structure, and microwave dielectric properties of gillespite‐type ceramics

Bond theory, terahertz spectra, and dielectric studies in donor‐acceptor (Nb‐Al) substituted ZnTiNb₂O₈ system

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Structural Evolution and Microwave Dielectric Properties ofxZn0.5Ti0.5NbO4-(1–x)Zn0.15Nb0.3Ti0.55O2Ceramics

Cited by 108 publications

References 54 publications

Intrinsic dielectric properties of columbite ZnNb2O6 ceramics studied by P–V–L bond theory and Infrared spectroscopy

Intrinsic dielectric properties of columbite ZnNb2O6 ceramics studied by P–V–L bond theory and Infrared spectroscopy

Phase evolution, crystal structure, and microwave dielectric properties of gillespite‐type ceramics

Bond theory, terahertz spectra, and dielectric studies in donor‐acceptor (Nb‐Al) substituted ZnTiNb2O8 system

Contact Info

Product

Resources

About

Structural Evolution and Microwave Dielectric Properties ofxZn_0.5Ti_0.5NbO₄-(1–x)Zn_0.15Nb_0.3Ti_0.55O₂Ceramics

Intrinsic dielectric properties of columbite ZnNb₂O₆ ceramics studied by P–V–L bond theory and Infrared spectroscopy

Intrinsic dielectric properties of columbite ZnNb₂O₆ ceramics studied by P–V–L bond theory and Infrared spectroscopy

Bond theory, terahertz spectra, and dielectric studies in donor‐acceptor (Nb‐Al) substituted ZnTiNb₂O₈ system