2018
DOI: 10.1088/2053-1591/aad123
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Structural, electronic, magnetic, optical and optoelectronic properties of the sprayed cobalt doped ZnO nanostructured thin films

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Cited by 4 publications
(3 citation statements)
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“…The result obtained for the undoped gadolinium oxide thin film which is 1,666 is relatable to other research works such as M. Misha et al [2] that found it in between 1,6 and 1,8 for different temperatures and 1,6 and 1,7 for different oxygen partial pressure, also Q. S. Johnson et al [10] In addition, the graphs obtained in figure 7 shows an increase in the absorbance from undoped gadolinium oxide to 2 at then 4 at % indium doped gadolinium oxide respectively. This increase can be correlated with crystallite average size where the diminution amplify the light interactions with our thin films leading to an augmentation in it [25]. Where C is a constant, Eg is the gap energy « eV », hυ is phonon energy « eV » and « r = 1/2 » for direct band gap.…”
Section: Optical and Optoelectronic Properties Of Gd2o3mentioning
confidence: 88%
“…The result obtained for the undoped gadolinium oxide thin film which is 1,666 is relatable to other research works such as M. Misha et al [2] that found it in between 1,6 and 1,8 for different temperatures and 1,6 and 1,7 for different oxygen partial pressure, also Q. S. Johnson et al [10] In addition, the graphs obtained in figure 7 shows an increase in the absorbance from undoped gadolinium oxide to 2 at then 4 at % indium doped gadolinium oxide respectively. This increase can be correlated with crystallite average size where the diminution amplify the light interactions with our thin films leading to an augmentation in it [25]. Where C is a constant, Eg is the gap energy « eV », hυ is phonon energy « eV » and « r = 1/2 » for direct band gap.…”
Section: Optical and Optoelectronic Properties Of Gd2o3mentioning
confidence: 88%
“…They are of keen potentials for various applications such as spintronics, spin-valve transistors, spin light-emitting diodes, and logic devices [6][7]. DMSs obtain their magnetic properties as a result of intrinsic defects or adding external impurities within semiconductors by doping process [6][7][8]. One of the most challenges facing DMS materials to be viable for commercial application is to get Curie temperatures (Tc) above room temperature or what so called the room temperature ferromagnetism (RTFM).…”
Section: Introductionmentioning
confidence: 99%
“…One of the most challenges facing DMS materials to be viable for commercial application is to get Curie temperatures (Tc) above room temperature or what so called the room temperature ferromagnetism (RTFM). Thus, recent studies are interested in increasing Tc experimentally by controlling the different preparation conditions and through different doping mechanisms [8,9].…”
Section: Introductionmentioning
confidence: 99%