Structural, electronic and thermoelectric properties of PbS, PbSe and their ternary alloy PbSe1−xSx

Abstract

Solid-state thermoelectric devices offer the possibility of exploiting waste heat from engines and power plants and converting it into electrical energy. One of the greatest challenges in the development of thermoelectric material systems is to find new thermoelectric materials with high thermoelectric figures of merit ZT. In this work, the structural, electronic and thermoelectric properties of PbSe[Formula: see text]S[Formula: see text] ([Formula: see text], 0.25, 0.50, 0.75 and 1) semiconductors are investigated by applying density functional theory in a full potential linearized augmented plane wave method (FP-LAPW). Calculations of structural properties were completed using the generalized gradient approximation GGA of Perdew Burke and Ernzerhof PBE to get reliable lattice constant results with experimental values. The obtained electronic results show that the PbSe[Formula: see text]S[Formula: see text] material is a narrow band gap semiconductor. In addition, the thermoelectric properties are studied on the basis of the fully iterative solution of the Boltzmann transport equation. PbSe[Formula: see text]S[Formula: see text] had a high figure of merit indicating that our materials are promising candidates in thermoelectric applications.