Structural, electronic and thermoelectric properties of SnTe with dilute co-doping of Ag and Cu

Jamwal, Gaurav; Kumar, Ankit; Warish, Mohd; Chakravarty, Shruti; Muthiah, Saravanan; Asokan, K.; Niazi, A.

doi:10.1016/j.jallcom.2023.170182

Cited by 9 publications

(2 citation statements)

References 55 publications

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“…All spectra show doublet peaks resulting from spin–orbit splitting (SOS). Sn 3d 3/2 and 3d 5/2 peaks at a binding energy of 495.2 and 486.7 eV, respectively, and a separation of 8.5 eV can be assigned to the Sn 2+ state . The Te 3d 3/2 (583.2 eV) and 3d 5/2 (572.8 eV) doublets with an SOS of 10.4 eV can be assigned to the Te 2– state and at higher binding energies of the Te 3d spectrum; the minor peaks (586.9, 576.4 eV) are assigned to the Te 4+ state from the TeO 2 surface oxides. , Bi 4f 5/2 (163.0 eV) and 4f 7/2 (157.7 eV) main peaks with a SOS of 5.3 eV are assigned to the Bi 3+ oxidation state, whereas the shoulders at higher binding energies (164.5, 159.2 eV) are labeled as Bi (3+ x )+ as previously reported to arise from binding with residual oxygen .…”

Section: Resultsmentioning

confidence: 98%

Enhanced Electrical, Thermal, and Mechanical Properties of SnTe through Equimolar Multication Alloying for Suitable Device Applications

Kihoi,

Shenoy,

Kim

et al. 2024

ACS Appl. Energy Mater.

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With the ever-growing demand for eco-friendly energy sources to mitigate the global rising temperatures, the universal insatiable need for sustainable and efficient energy sources are earnestly being intensively sought after. The ubiquitous heat within, if successfully tapped, is an utterly promising source of energy. To achieve this, a thermoelectric device (TED) is needed. To enhance the conversion efficiency from heat to useful electrical power, we developed a strategy to improve the thermoelectric performance of the materials involved. In this work, equimolar multication alloying (EMMCA) is proposed for the first time and employed to enhance the performance of SnTe-based thermoelectric materials. Beyond the cation's solubility limit, in situ compositing is observed with an increasing doping ratio, whereby distinct CuInTe 2 ternary second phases are dispersed within the SnTe matrix. The electronic properties of the ensuing alloy are significantly enhanced by the resulting carrier concentration modulation and the unique electronic band engineering. A decrease in the thermal transport properties is likewise reported, benefiting from enhanced phonon scattering and diminished electronic contribution. The mechanical properties are also shown to increase with increased alloying. As a result, single-leg TED performance shows substantial output power in comparison with the pristine sample. The outcomes stemming from EMMCA are documented as significantly impactful, contributing to superior overall thermoelectric performance.

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Section: Resultsmentioning

confidence: 98%

Enhanced Electrical, Thermal, and Mechanical Properties of SnTe through Equimolar Multication Alloying for Suitable Device Applications

Kihoi,

Shenoy,

Kim

et al. 2024

ACS Appl. Energy Mater.

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“…Sb-Te 1 bonds play a role in these two modes. Sb-Te 1 bond is smaller than Sb-Te 2 bond and hence has higher vibrational energy [52,53]. Sb 2 Te 3 films have small peaks at 89, 120 and 140 cm −1 that correspond to E 1 Te, A 1 Te and E 2 Te mode [53].…”

Section: Raman Spectroscopymentioning

confidence: 99%

Reduction of write current with improved thermal stability in GeSe₂ doped Sb₂Te₃ films for phase change memory applications

Bhatt,

Parveen,

Whab

et al. 2024

J. Phys. D: Appl. Phys.

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Chalcogenide alloy-based semiconductors have gained significant attention in recent decades due to its applications in phase change memory (PCM). Sb2Te3 has proven to be an alternative to Static and Dynamic Random Access Memory and can be a suitable candidate for commercial memory devices due to their fast switching speed. However, Sb2Te3 suffers from low amorphous phase stability and high RESET current, which needs further improvement for high power efficiency. In this work, we have prepared (Sb2Te3)1−x (GeSe2) x (x = 0.06, 0.12, 0.18, 0.24, 0.3) films to investigate their PCM properties. The films showed a rise in transition temperature to transform from high resistive amorphous (RESET) to low resistive crystalline (SET) states with doping that leads to significant enhancement in amorphous phase stability. For 30% doping of GeSe2 in Sb2Te3, the data retention temperature increases from 20.2 °C to 84.6 °C, and the resistance contrast also increases from 102 to 105. The rise in electrical resistance with doping in the amorphous as well as crystalline states leads to a drop in threshold current (I th) from 3.5 to 0.8 mA. This also reduces the RESET and SET currents. By analyzing the samples using finite element method, it was found out that the high resistance materials produce more heat, resulting in a lower write current in an energy efficient PCM device.

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Achieving high carrier mobility and low lattice thermal conductivity in GeTe-based alloys by cationic/anionic co-doping

Wang,

Hu,

Lin

et al. 2024

Rare Met.

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Structural, electronic and thermoelectric properties of SnTe with dilute co-doping of Ag and Cu

Cited by 9 publications

References 55 publications

Enhanced Electrical, Thermal, and Mechanical Properties of SnTe through Equimolar Multication Alloying for Suitable Device Applications

Enhanced Electrical, Thermal, and Mechanical Properties of SnTe through Equimolar Multication Alloying for Suitable Device Applications

Reduction of write current with improved thermal stability in GeSe₂ doped Sb₂Te₃ films for phase change memory applications

Achieving high carrier mobility and low lattice thermal conductivity in GeTe-based alloys by cationic/anionic co-doping

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Structural, electronic and thermoelectric properties of SnTe with dilute co-doping of Ag and Cu

Cited by 9 publications

References 55 publications

Enhanced Electrical, Thermal, and Mechanical Properties of SnTe through Equimolar Multication Alloying for Suitable Device Applications

Enhanced Electrical, Thermal, and Mechanical Properties of SnTe through Equimolar Multication Alloying for Suitable Device Applications

Reduction of write current with improved thermal stability in GeSe2 doped Sb2Te3 films for phase change memory applications

Achieving high carrier mobility and low lattice thermal conductivity in GeTe-based alloys by cationic/anionic co-doping

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Reduction of write current with improved thermal stability in GeSe₂ doped Sb₂Te₃ films for phase change memory applications