Structural, electronic, and magnetic properties of perpendicularly magnetised Mn<sub>2</sub>RhSn thin films

Meshcheriakova, O.; Köhler, Albrecht; Ouardi, Siham; Kondo, Yukio; Kubota, Takahide; Shekhar, Chandra; Karel, Julie; Barbosa, Carlos V; Stinshoff, Rolf; Sahoo, Roshnee; Ueda, Shigenori; Ikenaga, Eiji; Mizukami, Shigemi; Chadov, Stanislav; Ebke, Daniel; Fecher, Gerhard H.; Felser, Claudia

doi:10.1088/0022-3727/48/16/164008

Cited by 8 publications

(7 citation statements)

References 40 publications

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“…Each measurement was performed after ZFC. r xy is found to be ∼−1 μΩ cm at 2 K which is considerably higher than found in earlier studies on similarly prepared films although these earlier films were protected by a 5 nm thick Rh layer which would shunt current [21]. r xy increases nonlinearly for low fields and linearly for m…”

Section: Hall Effect Measurementscontrasting

confidence: 55%

“…xx xy However, the measured value is much smaller than the calculated value, presumably because of the rather large value of the longitudinal resistivity (see the significantly smaller r xx in [21]). In a similar way as for s , xy we also calculate values of s yz and s zx which are found to be around −8 (Ωcm) −1 , and much smaller than s .…”

Section: Ahe Calculationmentioning

confidence: 70%

“…Neutron diffraction studies of bulk polycrystalline Mn 2 RhSn have revealed a canting of Mn II moments below a spin reorientation transition near ∼80 K [20]. Electronic properties, studied by hard x-ray photoelectron spectroscopy, and the temperature dependence of magnetoresistance in thin films of Mn 2 RhSn have been studied by Meshcheriakova et al [21]. In this work, we report the observation of a temperature dependent topological Hall effect (THE) in thin films of Mn 2 RhSn.…”

Section: Introductionmentioning

confidence: 67%

“…Since the DMI interaction originates from spin-orbit coupling, the DMI interaction is typically larger for heavy elements. Thus, the Mn 2 RhSn system [20,21] is of especial interest. Mn 2 RhSn has two magnetic sublattices, with alternating planes of Mn I and Mn II moments that prefer an anti-parallel arrangement.…”

Section: Introductionmentioning

confidence: 99%

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Observation of topological Hall effect in Mn₂RhSn films

et al. 2016

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Recently non-collinear magnetic structures have attracted renewed attention due to the novel Hall effects that they display. In earlier work evidence for a non-collinear magnetic structure has been reported for the ferromagnetic Heusler compound Mn 2 RhSn. Using sputtering techniques we have prepared high quality epitaxial thin films of Mn 2 RhSn by high temperature growth on MgO (001) substrates. The films are tetragonally distorted with an easy magnetization axis along the c-axis. Moreover, we find evidence for an anomalous Hall effect whose magnitude increases strongly below the Curie temperature that is near room temperature. Consistent with theoretical calculations of the anomalous Hall conductivity that we have carried out by deriving the Berry curvature from the electronic structure of perfectly ordered Mn 2 RhSn, the sign of the anomalous Hall conductivity is negative, although the measured value is considerably smaller than the calculated value. We attribute this difference to small deviations in stoichiometry and chemical ordering. We also find evidence for a topological Hall resistivity of about 50 nΩ cm, which is ∼5% of the anomalous Hall effect, for temperatures below 100 K. The topological Hall effect signifies the presence of a chiral magnetic structure that evolves from the non-collinear magnetic structure that Mn 2 RhSn is known to exhibit.

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Section: Hall Effect Measurementscontrasting

confidence: 55%

Section: Ahe Calculationmentioning

confidence: 70%

Section: Introductionmentioning

confidence: 67%

Section: Introductionmentioning

confidence: 99%

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Observation of topological Hall effect in Mn₂RhSn films

et al. 2016

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“…Recent experiments confirm skyrmions in several Mn 2 Y Z compounds that crystallize in the tetragonal inverse Heusler structure (I4m2) that breaks bulk inversion [36,37]. The epitaxial film growth of several of these compounds has recently been demonstrated [132][133][134][135][136] providing a path towards further manipulation of the DM interaction in layered heterostuctures of these materials. Beyond skyrmion stability, recent theoretical proposals suggest that skyrmion/superconductor interfaces may be another platform for hosting Majorana fermions [137,138], potentially realizable in an all-Heusler system.…”

Section: Opportunities At Interfacesmentioning

confidence: 99%

Heusler interfaces—Opportunities beyond spintronics?

Kawasaki

2019

APL Materials

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Heusler compounds, in both cubic and hexagonal polymorphs, exhibit a remarkable range of electronic, magnetic, elastic, and topological properties, rivaling that of the transition metal oxides. To date, research on these quantum materials has focused primarily on bulk magnetic and thermoelectric properties or on applications in spintronics. More broadly, however, Heuslers provide a platform for discovery and manipulation of emergent properties at well-defined crystalline interfaces. Here, motivated by advances in the epitaxial growth of layered Heusler heterostructures, I present a vision for Heusler interfaces, focusing on the frontiers and challenges that lie beyond spintronics. The ability to grow these materials epitaxially on technologically important semiconductor substrates, such as GaAs, Ge, and Si, provides a direct path for their integration with modern electronics. Further advances will require new methods to control the stoichiometry and defects to "electronic grade" quality, and to control the interface abruptness and ordering at the atomic scale. arXiv:1908.00101v1 [cond-mat.mtrl-sci]

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Magnetic Properties of Mn2RhSi Heusler Alloy: Phase Transition and Hysteresis Behavior at a Very Low Temperature

Duran

2021

J Low Temp Phys

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Structural, electronic, and magnetic properties of perpendicularly magnetised Mn₂RhSn thin films

Cited by 8 publications

References 40 publications

Observation of topological Hall effect in Mn₂RhSn films

Observation of topological Hall effect in Mn₂RhSn films

Heusler interfaces—Opportunities beyond spintronics?

Magnetic Properties of Mn2RhSi Heusler Alloy: Phase Transition and Hysteresis Behavior at a Very Low Temperature

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Structural, electronic, and magnetic properties of perpendicularly magnetised Mn2RhSn thin films

Cited by 8 publications

References 40 publications

Observation of topological Hall effect in Mn2RhSn films

Observation of topological Hall effect in Mn2RhSn films

Heusler interfaces—Opportunities beyond spintronics?

Magnetic Properties of Mn2RhSi Heusler Alloy: Phase Transition and Hysteresis Behavior at a Very Low Temperature

Contact Info

Product

Resources

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Structural, electronic, and magnetic properties of perpendicularly magnetised Mn₂RhSn thin films

Observation of topological Hall effect in Mn₂RhSn films

Observation of topological Hall effect in Mn₂RhSn films