2020
DOI: 10.1016/j.jallcom.2019.152130
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Structural, electrical, dielectric and optical properties of PrCrO3 ortho-chromite

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Cited by 61 publications
(13 citation statements)
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“…Among these, the peak at 746cm -1 is attributed to the asymmetric tensile vibration of the Ge-O-Ge bond, the peak at 512 cm -1 is attributed to the symmetrical tensile vibration of the Ge-O-Ge bond, and the peak at 425 cm -1 can be attributed to the deformation vibration of O-Cr-O bond. This observation also con rms that Cr 4+ ions are indeed doped into Li 2 TiGeO 5 [19][20][21]. At the same time, with the increase in the Cr 4+ ions doping concentration, the vibration of the Ge-O bond increases, and the peak at 878 cm -1 increases.…”
Section: Resultssupporting
confidence: 68%
“…Among these, the peak at 746cm -1 is attributed to the asymmetric tensile vibration of the Ge-O-Ge bond, the peak at 512 cm -1 is attributed to the symmetrical tensile vibration of the Ge-O-Ge bond, and the peak at 425 cm -1 can be attributed to the deformation vibration of O-Cr-O bond. This observation also con rms that Cr 4+ ions are indeed doped into Li 2 TiGeO 5 [19][20][21]. At the same time, with the increase in the Cr 4+ ions doping concentration, the vibration of the Ge-O bond increases, and the peak at 878 cm -1 increases.…”
Section: Resultssupporting
confidence: 68%
“…However, at low frequency the existence of oxygen vacancies, grain boundaries traps, Fe 2+ ions etc. [63] generate a high value of imaginary part ε" .In addition, imaginary part ε" increase with temperature rise which activate thermally carrier for hopping process which confirms the semiconductor comportment of our sample . Furthermore, permittivity ε" can be analyzed by the Giuntini theory [64] (the linear fit Fig.…”
Section: Dielectric Studysupporting
confidence: 80%
“…Furthermore, permittivity ε" can be analyzed by the Giuntini theory [64] (the linear fit Fig. 7) which has been successfully applied to many materials such as; manganites, perovskites, and spinel ferrites [63,65,66]. Basing to the Giuntini model, the imaginary part of permittivity ε" is given by the following expression [64]:…”
Section: Dielectric Studymentioning
confidence: 99%
“…However, at low frequency the existence of oxygen vacancies, grain boundaries traps, Fe 2+ ions etc. [63] generate a high value of imaginary part ε" .In addition, imaginary part ε" increase with temperature rise which activate thermally carrier for hopping process which confirms the semiconductor comportment of our sample . Furthermore, permittivity ε" can be analyzed by the Giuntini theory [64] (the linear fit Fig.…”
Section: Dielectric Studysupporting
confidence: 80%
“…Furthermore, permittivity ε" can be analyzed by the Giuntini theory [64] (the linear fit Fig. 7) which has been successfully applied to many materials such as; manganites, perovskites, and spinel ferrites [63,65,66]. Basing to the Giuntini model, the imaginary part of permittivity ε" is given by the following expression [64]:…”
Section: Dielectric Studymentioning
confidence: 99%