Structural, Electrical, and Optical Properties of PbTe Thin Films Prepared by Simple Flash Evaporation Method

Kungumadevi, L.; Ramakrishnan, S.

doi:10.1155/2012/763209

Cited by 14 publications

(5 citation statements)

References 19 publications

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“…However, this rule is substantially disturbed for the chalcogenide crystals due to presence of a large number of intrinsic cationic defects and exact application of this equation is limited. However, following the presented in Figure 7 dependence, one can see that it is closer to the direct transition [51] (see Figure 7b) with E d g = 1.86 eV. It is well-known that when recording the XPS spectra for chemical elements that constitute semiconductors, they are very sensitive to methods of calibrations of the surface charging effects [45,49].…”

Section: Optical Propertiesmentioning

confidence: 56%

Novel Quaternary TlGaSn2Se6 Single Crystal as Promising Material for Laser Operated Infrared Nonlinear Optical Modulators

et al. 2017

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Abstract:The studies of the laser operated third order nonlinear optical features of novel TlGaSn 2 Se 6 crystal were done. The main efforts were devoted to a search of a possibility to apply these crystals as laser operated optoelectronic material. For this reason, the third harmonic generation of the Nd:YAG pulse laser 1064 nm as the fundamental beam with varied energy density of up to 200 J/m 2 was studied. As a source of laser operated light, we have used the cw laser (532 nm), exciting the material above the energy gap. Additionally, the influence of middle-energy Ar + ions on the XPS spectra of the TlInSn 2 Se 6 surface has been explored. We have shown that the main contribution of the Se4p states is manifested in the upper part of the valence band of TlInSn 2 Se 6 We have established that for the TlGaSn 2 Se 6 crystal there exists a possibility of variation of the third harmonic generation efficiency using illumination by external continuous wave laser beam. The discovered effect makes it possible to utilize TlGaSn 2 Se 6 crystal in advanced optoelectronic laser operated devices.

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Section: Optical Propertiesmentioning

confidence: 56%

Novel Quaternary TlGaSn2Se6 Single Crystal as Promising Material for Laser Operated Infrared Nonlinear Optical Modulators

et al. 2017

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“…PbTe films (∼950 nm) evaporated on CaF 2 by thermal evaporation method show p -type conduction at room temperature and possess an optical band gap of 0.386 eV, larger than the typical value of 0.31 eV for bulk material, due to quantum confinement effect [24]. PbTe films with a thickness of 50 nm, deposited onto glass substrates by flash evaporation method, exhibit large blue shifted bandgap and an enhancement in electrical conductivity [25]. Those advances in nano-techniques make it feasible to fabricate PbTe ultra-thin layers for applications in 2D flexible optoelectronic devices.…”

Section: Introductionmentioning

confidence: 95%

Bandgap engineering of PbTe ultra-thin layers by surface passivations

Huang

Zhang

2019

J. Phys.: Condens. Matter

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We calculate the electronic structures of the PbTe (1 1 1) ultra-thin films by performing the first-principles calculations. The PbTe (1 1 1) ultra-thin films possess direct or indirect band gaps depending sensitively on surface passivations with hydrogen or halogen atoms, and the band gaps depend sensitively on the passivation elements. The bandgaps of PbTe (1 1 1) ultra-thin films with hydrogen passivations can be tuned from 15 meV to 65 meV by applying external strains, making PbTe ultra-thin films promising candidates for optoelectronic device applications in terahertz regime.

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“…first-principles study. The behavior of absorption coefficient with the variation of wavelength can be depicted by the equation αhv = A(hv-E g ) p , where A is a constant, p is an exponent [47]. Nonetheless, IQE maintained almost constant value of just over 60% up to 2000 nm of wavelength, before falling to zero value at the cut off wavelength of 2070 nm.…”

Section: Effects Of Emitter On Gete Tpv Performancementioning

confidence: 99%

Exploring the potential of GeTe for the application in Thermophotovoltaic (TPV) cell

Abir,

Mondal,

Hossain

2023

Phys. Scr.

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Germanium telluride (GeTe) having a direct bandgap of 0.6 eV has mainly been used in phase change memory and thermoelectric power generation. In this article, we study the electronic structure of the GeTe by first-principles calculations. The theoretical direct bandgap of GeTe was found to be 0.69 eV which is very close to the experimental value. Then, we demonstrated a single-junction GeTe thermophotovoltaic (TPV) cell based on device transport model with np structure at the black body and cell temperature of 1775 and 300 K, respectively. The device was optimized for the higher performance of the TPV cell. The GeTe TPV cell exhibited an efficiency of 7.9% with JSC = 16.16 A cm−2, VOC = 0.360 V and FF = 75.51%, respectively. These results indicate that GeTe could be a promising material for the fabrication of efficient TPV cell.

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Structural, Electrical, and Optical Properties of PbTe Thin Films Prepared by Simple Flash Evaporation Method

Cited by 14 publications

References 19 publications

Novel Quaternary TlGaSn2Se6 Single Crystal as Promising Material for Laser Operated Infrared Nonlinear Optical Modulators

Novel Quaternary TlGaSn2Se6 Single Crystal as Promising Material for Laser Operated Infrared Nonlinear Optical Modulators

Bandgap engineering of PbTe ultra-thin layers by surface passivations

Exploring the potential of GeTe for the application in Thermophotovoltaic (TPV) cell

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