Structural, electrical and optical properties of spray deposited V2O5 thin films on glass substrates

Vijayakumar, Y.; Jyothi, D. Shanmukhi; Nagaraju, P.; Reddy, M.V. Ramana

doi:10.13036/17533562.57.1.019

Cited by 4 publications

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“…To confirm the chemical composition of the synthesized 2D V 2 O 5 , Raman analysis of V 2 O 5 was performed and is shown in Figure a. The vibrations at 145 and 195 cm –1 are due to the VO 5 –VO 5 modes . The peak at 994 cm –1 corresponds to the doubly coordinated oxygen bonds (VO), and the 694 cm –1 peak can be attributed to triply coordinated oxygen bonds due to the stretching modes at the atomic level.…”

Section: Resultsmentioning

confidence: 99%

“…The vibrations at 145 and 195 cm −1 are due to the VO 5 −VO 5 modes. 15 The peak at 994 cm −1 corresponds to the doubly coordinated oxygen bonds (VO), and the 694 cm −1 peak can be attributed to triply coordinated oxygen bonds due to the stretching modes at the atomic level. The Raman peak at 490 cm −1 corresponds to the stretching mode of V−O 3 −V, and the bending vibrations of the VO bonds are observed at the 284 and 407 cm −1 modes.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

“…Among the members of the vanadium oxide family, vanadium pentoxide (V 2 O 5 ) possesses excellent electronic and chemical properties, which make it a potential candidate for electronic applications compared to other oxides of vanadium . There are reports on V 2 O 5 being utilized for the fabrication of field-effect transistors, chemical sensors, energy harvesters, etc. , V 2 O 5 possesses a direct band gap of 2.2–2.7 eV, which makes it an ideal choice for optoelectronic applications such as photodetectors . There are recent reports on the synthesis of different structures of V 2 O 5 such as nanowires, nanotubes, and nanospheres for its utilization of photodetectors fabricated using different techniques. , Although there are reports on one-dimensional (1D) structures of V 2 O 5 , its low surface area limits the transport of charges and becomes a challenge in defining contacts on 1D structures.…”

Section: Introductionmentioning

confidence: 99%

“…13,14 V 2 O 5 possesses a direct band gap of 2.2−2.7 eV, which makes it an ideal choice for optoelectronic applications such as photodetectors. 15 There are recent reports on the synthesis of different structures of V 2 O 5 such as nanowires, nanotubes, and nanospheres for its utilization of photodetectors fabricated using different techniques. 16,17 Although there are reports on one-dimensional (1D) structures of V 2 O 5 , its low surface area limits the transport of charges and becomes a challenge in defining contacts on 1D structures.…”

Section: ■ Introductionmentioning

confidence: 99%

See 3 more Smart Citations

V₂O₅ Nanosheets for Flexible Memristors and Broadband Photodetectors

Yalagala

Sahatiya

Kolli

et al. 2019

ACS Appl. Nano Mater.

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The synthesis of vanadium oxide family compounds is challenging because of their affinity to exist in different oxidation states and is further intensified by the lack of suitable techniques for their direct growth on flexible substrates, thus limiting their applications in flexible electronics. In this report, we demonstrate the one-step fabrication of a two-dimensional (2D) V2O5-based versatile papertronics (paper electronics) platform on a low-cost cellulose paper substrate and its application toward broadband photodetection and resistive memories. The porous nature of cellulose paper helps in the uniform growth of 2D V2O5 not only on the surface but also in bulk, thereby assisting in the easy diffusion of silver ions (Ag+) in the defect sites of V2O5, unlike in conventional flexible polymeric substrates, thereby assisting in the resistive switching mechanism. 2D V2O5 on a cellulose-paper-based memory exhibited an ON/OFF ratio of 3.5 × 102 and V set and V reset voltages of ∼+1 and −1 V, respectively, with excellent endurance and retention capacity of up to 500 cycles. The synthesized 2D V2O5 nanosheets exhibited broadband absorption ranging from ultraviolet (UV) to visible with an optical band gap calculated as 2.4 eV, making it suitable for broadband photodetection. Responsivities under UV- and visible-light illumination were found to be 31.5 and 20.2 mA/W, respectively, which are better than those of V2O5-based photodetectors fabricated using sophisticated methods. The fabricated broadband photodetector exhibited excellent mechanical stability with excellent retention in responsivity values over 500 cycles. The strategy outlined here presents a novel, low-cost, and one-step approach for fabricating devices on paper that find wide applications in flexible electronics.

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Section: Resultsmentioning

confidence: 99%

Section: ■ Results and Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: ■ Introductionmentioning

confidence: 99%

See 2 more Smart Citations

V₂O₅ Nanosheets for Flexible Memristors and Broadband Photodetectors

Yalagala

Sahatiya

Kolli

et al. 2019

ACS Appl. Nano Mater.

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“…This may be due to the structural reorganization of the film. All observed bands are assigned and tabulated in Table 2 [12].…”

Section: Fig 3 Raman Spectra Of V2o5 Films Deposited At Different Amentioning

confidence: 99%

Effect of Annealing Temperature on Structural, Morphological, Optical and Electrical Properties of Spray Deposited V2O5 Thin Films

Vijayakumar¹,

Nagaraju²,

Sontu³

et al. 2019

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Nanostructured vanadium pentoxide (V2O5) thin films have been deposited by a simple and cost-effective spray pyrolysis technique (SPT) at substrate temperature 300 °C and post annealed at atmospheric conditions in the temperature range from 300 °C to 500 °C at a constant rate of heating. The influence of post annealing heat treatment on the crystallization of V2O5 has been investigated. Films were characterized structurally by X-ray diffraction, morphologically by Scanning electron microscopy, optically using UV-Vis spectrophotometer, electrical characterization using Hall probe and Raman spectroscopy has been carried out for phase confirmation. X-ray diffraction analysis (XRD) revealed that, as deposited films were orthorhombic structures with a preferential orientation along (0 0 1) direction. Moreover, it was observed that crystallite size increases from 22 nm to 56 nm with increase in annealing temperature. Optical properties of these samples were studied in the wavelength range 300-1000 nm. Raman spectrum confirms the layered structure of V2O5 thin films. Hall Effect measurements indicate that the change in carrier concentration with increase in annealing temperature.

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V₂O₅ nanoflakes for broad-spectral-response self-powered photodetectors with a high on/off ratio and high detectivity

Şakar,

Yıldırım,

Aydoğan

2024

J. Phys. D: Appl. Phys.

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In this study, V2O5 nanoflakes (NFs) was coated on Si substrate by DC sputtering to obtain V2O5 NFs/n-Si heterojunction. To utilize V2O5 NFs as a broadband photodetector, absorbance spectra were studied using UV−Vis−near-IR (NIR) spectroscopy. Cut-off wavelength was 530 nm. Furthermore, EDX, XRD, XPS and SEM analyses of V2O5 NFs were achieved. The V2O5 NFs/n-Si device gave a very high rectifying ratio of 1.18×104 in the dark and at zero bias, it has self-powered mode and an on/off ratio of 1.29×106. Optical analyses of the V2O5 NFs/n-Si heterojunction device were studied in detail under UV (365, 395 nm) and IR (850 nm) illumination as well as visible light with varying light intensities. Analysis of experimental studies showed that the device has a high photoresponse under all illuminations. For optical analysis based on I-V measurements, responsivity, detectivity, on/off ratio, EQE, NPDR and NEP analyses were achieved. The maximum values of responsivity from measurements under visible, UV (395 nm) and IR illumination (850 nm) were 104, 882 and 850 mA/W for -2.0 V, respectively. Detectivity values are maximized at V=0 volts and are 6.84×1011, 7.87×1012 and 6.87×1012 Jones for the same illuminations respectively. With increasing intensity, the rectification ratio and NEP decreased while the other parameters generally increased. The increase in performance at increasing visible intensity was attributed to the increase in photogenerated carrier density at high intensities, and the high performance in the UV region was attributed to the high light absorption of V2O5 NFs in the UV region.

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Structural, electrical and optical properties of spray deposited V2O5 thin films on glass substrates

Cited by 4 publications

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V₂O₅ Nanosheets for Flexible Memristors and Broadband Photodetectors

V₂O₅ Nanosheets for Flexible Memristors and Broadband Photodetectors

Effect of Annealing Temperature on Structural, Morphological, Optical and Electrical Properties of Spray Deposited V2O5 Thin Films

V₂O₅ nanoflakes for broad-spectral-response self-powered photodetectors with a high on/off ratio and high detectivity

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Structural, electrical and optical properties of spray deposited V2O5 thin films on glass substrates

Cited by 4 publications

References 0 publications

V2O5 Nanosheets for Flexible Memristors and Broadband Photodetectors

V2O5 Nanosheets for Flexible Memristors and Broadband Photodetectors

Effect of Annealing Temperature on Structural, Morphological, Optical and Electrical Properties of Spray Deposited V2O5 Thin Films

V2O5 nanoflakes for broad-spectral-response self-powered photodetectors with a high on/off ratio and high detectivity

Contact Info

Product

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About

V₂O₅ Nanosheets for Flexible Memristors and Broadband Photodetectors

V₂O₅ Nanosheets for Flexible Memristors and Broadband Photodetectors

V₂O₅ nanoflakes for broad-spectral-response self-powered photodetectors with a high on/off ratio and high detectivity