Structural, electrical and optical properties of carbon-doped CdS thin films prepared by pulsed-laser deposition

Orlianges, Jean‐Christophe; Champeaux, Corinne; Dutheil, Perrine; Catherinot, A.; Mejean, T.

doi:10.1016/j.tsf.2010.12.139

Cited by 40 publications

(18 citation statements)

References 26 publications

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“…, and the same order as occurred in X-doped bulk CdS [18]. The moderate formation energy suggests that C dopant can be easily implanted into CdS matrix in experiment [42]. Now, we turn to consider the local structures of doped CdS monolayer with one X impurity.…”

Section: Stabilities and Geometry Structures Of X-mentioning

confidence: 76%

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Magnetic properties in CdS monolayer doped with first-row elements: A density functional theory investigation

Xiao

Wang

2014

Phys. Status Solidi B

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Using first‐principles calculations, we have studied the structural, electronic, and magnetic properties in CdS monolayer doped with nonmagnetic (NM) atoms X (X = B, C, N, and O). The total magnetic moments are about 1.0, 2.0, 1.0, and 0.0 µB per supercell for the B‐, C‐, N‐, and O‐doped systems, respectively. As the electronegativity of X element increases, the local magnetic moment tends to localize and the impurity states gradually approach the valence band maximum of the host CdS. We find that the CdS monolayer with one S atom per supercell substituted by a B or C atom is half‐metallic (HM), while that with an N atom per supercell is a ferromagnetic (FM) semiconductor. As for the one‐oxygen doped case, the system still remains a semiconductor. Upon two S atoms per supercell substituted by X (=B, C, and N) atom, the X‐doped CdS systems exhibit various magnetic ground states. As a consequence of the competition between double‐exchange and super‐exchange, the two‐B‐doped CdS system displays NM and anti‐magnetic (AFM) behaviors, while the two‐C‐doped CdS system shows HM ferromagnetism with a Curie temperature of 280 K. However, the two‐N‐doped CdS system is a semiconductor with weakly AFM ground state. Our study demonstrates that the NM elements doping is an efficient route to tune the magnetic and electronic properties in CdS monolayers.

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Section: Stabilities and Geometry Structures Of X-mentioning

confidence: 76%

“…For the B‐, C‐, and N‐doing, the formation energies follow the order: E f (B) > E f (N) > E f (C), and the same order as occurred in X‐doped bulk CdS . The moderate formation energy suggests that C dopant can be easily implanted into CdS matrix in experiment .…”

Section: Resultsmentioning

confidence: 99%

Magnetic properties in CdS monolayer doped with first-row elements: A density functional theory investigation

Xiao

Wang

2014

Phys. Status Solidi B

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“…Various techniques and methods have been applied to deposit doped CdS films such as thermal evaporation, chemical vapor deposition spray pyrolysis (SP), Silar, pulsed laser deposition, sol‐gel, and sputtering . Among all the techniques, the SP technique is best suited for Cd 0.8 Sn 0.2 S thin film deposition because it enables a low production cost of large area thin films and good adherence with easy intentional doping .…”

Section: Introductionmentioning

confidence: 99%

AC conductivity and dielectric studies of Cd_0.8Sn_0.2S thin films

Amroun

Khadraoui

2019

Int J Numerical Modelling

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Thin films of Cd 0.8 Sn 0.2 S were prepared by spray pyrolysis method. The Dc and Ac electrical conduction of Cd 0.8 Sn 0.2 S thin films was investigated in this work. Ac conductivity study of the prepared sample is reported in the frequency range 5 Hz to 13 MHz at various temperatures (300-343 K) using impedance spectroscopy. The Cole-Cole plot shows a single semicircle, indicating an equivalent circuit with a single parallel resistor R and capacitance C. Ac conductivity Ac(ω) is found to be proportional to ω s where s < 1. The value of s tends to decrease depending on the temperature. The temperature dependence of both the Ac conductivity and the parameter s is interpreted by the correlated barrier hopping (CBH) model. The temperature-dependent Dc conductivity and the relaxation frequency are found to obey the Arrhenius law having activation energy of 0.17 eV. The density of states at Fermi level is calculated and is of the order of 10 15 eV −1 ·cm −3 . Dielectric constant ε′ and dielectric loss ε″ were found to decrease with frequency and increase with temperature in the investigated ranges.

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“…Owing to their interesting structural, optical and electrical properties that are much different compared to bulk materials, CdS thin films can be applied in many technologies such as window layer in solar cells 2 , optical sensors 3 , transistors 4 , diodes 5 , etc. Various methods such as electrodeposition 6 , spray pyrolysis 7 , successive ionic layer adsorption and reaction (SILAR) 8 , pulsed-laser deposition 9 , vacuum evaporation 10 , chemical bath deposition (CBD) 11 , and thermal evaporation 12 , etc. are used to prepare CdS thin films.…”

Section: Introductionmentioning

confidence: 99%

Structural, Optical and Electrical Properties of Thermally Deposited CdS Thin Films

2017

JCBSC

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Thermal evaporation technique is used to deposit CdS thin films on glass substrates using CdS powder. Various characterization techniques have been used to investigate the structural, optical and electrical properties of the prepared thin films. The results of XRD analysis showed that the as-deposited and annealed (at 200 C for 1 hour) CdS films were single crystalline having a cubic structure with (111) plane orientation according to International Center for Diffraction Data (ICDD) card number 10-0454. The crystallite size is found to be 37.32 nm and 39.78 nm for the as-deposited and annealed films respectively. The "AFM" outcomes show uniform, homogeneous and tightly adherent films over the entire glass substrate surface without any voids, pinholes or cracks and having a large number of grains. The UV-Visible-NIR absorbance spectra were recorded in the range of (400-1100) nm to investigate the optical characteristics. The results have shown that the CdS films have a low absorbance in the visible-near infrared region from ~ 500 nm to 1100 nm. The energy gap was calculated using Tauc's plot and it was around 2.4 eV for the asdeposited and annealed films. The electrical characterization included D.C. conductivity and Hall Effect measurements were carried out. From D.C. measurements, it was found that the deposited films have two transport mechanisms of free carriers and two activation energies were estimated. Hall measurement results showed that the deposited films are n-type, and the carrier concentration and mobility have been estimated.

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Structural, electrical and optical properties of carbon-doped CdS thin films prepared by pulsed-laser deposition

Cited by 40 publications

References 26 publications

Magnetic properties in CdS monolayer doped with first-row elements: A density functional theory investigation

Magnetic properties in CdS monolayer doped with first-row elements: A density functional theory investigation

AC conductivity and dielectric studies of Cd_0.8Sn_0.2S thin films

Structural, Optical and Electrical Properties of Thermally Deposited CdS Thin Films

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Structural, electrical and optical properties of carbon-doped CdS thin films prepared by pulsed-laser deposition

Cited by 40 publications

References 26 publications

Magnetic properties in CdS monolayer doped with first-row elements: A density functional theory investigation

Magnetic properties in CdS monolayer doped with first-row elements: A density functional theory investigation

AC conductivity and dielectric studies of Cd0.8Sn0.2S thin films

Structural, Optical and Electrical Properties of Thermally Deposited CdS Thin Films

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Product

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AC conductivity and dielectric studies of Cd_0.8Sn_0.2S thin films