Structural, electrical and optical properties of zirconium-doped zinc oxide films prepared by radio frequency magnetron sputtering

Lv, Maoshui; Xiu, Xianwu; Pang, Zhiyong; Dai, Ying; Ye, Lina; Cheng, Chuanfu; Han, Shuhua

doi:10.1016/j.tsf.2007.06.173

Cited by 59 publications

(44 citation statements)

References 28 publications

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“…The results reported in (TABLE 1) revealed that the crystallites in Sr-doped layers were smaller than in the undoped layers. A similar effect was observed by Sun [44] and by Lv [46] as a result of LaCoO 3 doping with Mg. Decrease of the grain size could be explained by migration of dopant into the grain boundaries and thus the introduction of the crystal lattice disorder, resulting in a reduction in crystallite size [46].…”

Section: Pld and Ped Deposition Of Perovskite Oxidessupporting

confidence: 83%

Deposition Of Oxide And Intermetallic Thin Films By Pulsed Laser (PLD) And Electron Beam (PED) Methods

Kusiński¹,

Kopia²,

Cieniek³

et al. 2015

Archives of Metallurgy and Materials

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In this work the pulsed laser deposition (PLD) and the pulsed electron beam deposition (PED) techniques were used for fabrication of Mo-Bi 2 O 3 , La 1-x Sr x CoO 3 , La 1-x Ca x CoO 3 and Al-Mg thin films. An influence of ablation process basic parameters on the coatings structure and properties was discussed. Two types of laser ablation systems were applied: one equipped with a KrF excimer and second with a Q-switched Nd:YAG. Films were deposited on Si and MgO substrates. Scanning (SEM) and transmission (TEM) electron microscopy, atomic force microscopy (AFM) as well as X-ray diffraction (XRD) were used for structural analysis. Investigations focused on structure and chemical composition showed that smooth and dense thin films with nanocrystalline structure, preserving the composition of the bulk target, could be obtained by the both PLD and PED techniques. Research study showed that by a proper selection of PLD and PED process parameters it was possible to deposit films with significantly decreased amount and size of undesirably nanoparticulates.Keywords: PLD, PED, thin films, structure, doped oxidesOsadzanie laserem impulsowym (PLD) oraz osadzanie impulsową wiązka elektronową (PED) wykorzystane zostało do wytwarzania cienkich filmów typu: Mo-Bi 2 O 3 , La 1-x Sr x CoO 3 , La 1-x Ca x CoO 3 oraz Al-Mg. Dyskutowano wpływ podstawowych parametrów procesu ablacji na strukturę i właściwości uzyskiwanych powłok. Wykorzystane zostały dwa typy systemów do ablacji; jeden z ekscymerowym laserem KrF i drugi na bazie lasera Nd:YAG z modulatorem dobroci (Q-Switch). Filmy osadzano na podłożu Si i MgO. Skaningowa (SEM) i transmisyjna (TEM) mikroskopia elektronowa, mikroskopia sił atomowych (AFM), oraz dyfrakcja rentgenowska (XRD) wykorzystana została do analizy strukturalnej. Badania skoncentrowane na strukturze i skła-dzie chemicznym wykazały jednorodną i zwartą budowę cienkich nanokrystalicznych filmów uzyskanych metodami PLD i PED utrzymujących skład odparowywanych tarcz. Wykazano doświadczalnie, że odpowiednie dobranie parametrów procesu pozwala otrzymywać filmy o istotnym zminimalizowaniu ilości i wymiarów niekorzystnych nanocząstek w powłoce.

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Section: Pld and Ped Deposition Of Perovskite Oxidessupporting

confidence: 83%

Deposition Of Oxide And Intermetallic Thin Films By Pulsed Laser (PLD) And Electron Beam (PED) Methods

Kusiński¹,

Kopia²,

Cieniek³

et al. 2015

Archives of Metallurgy and Materials

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“…We consider substitutional Zr on the Zn site, Zr Zn , since this is indicated experimentally in Zr-doped ZnO films 39,40 , and the ionic radius of Zr 4+ (0.745Å) is very close to that of Zn 2+ (0.74Å). We find that Zr Zn induces a fully occupied singlet defect state in the conduction band, and thus acts as a double donor in ZnO.…”

Section: B Single Dopants/impuritiesmentioning

confidence: 99%

Design of shallow acceptors in ZnO through early transition metals codoped with N acceptors

et al. 2011

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We perform first-principles density-functional theory calculations to study the atomic and electronic properties of early transition metals (Zr, Ti, Y, and Sc) co-doped with N in wurtzite ZnO. By incorporating early transition metals Ti, Zr, Y and Sc with N into ZnO simultaneously, we find that forming complexes (Zr-2N), (Ti-2N), (Y-N) and (Sc-N) induces fully occupied impurity bands with the N 2p character above the valence band maximum of host ZnO. With further doping of N in ZnO, the systems (Zr-2N):N, (Ti-2N):N, (Y-N):N or (Sc-N):N have acceptor ionization energies lower than that of the isolated N acceptor in ZnO. Under different growth conditions (i.e using N2O or NO source for the nitrogen atoms), we calculate the formation energies of the defect complexes and compare the dopability of the selected co-doped systems. Our results show that the valence band maximum characteristic of ZnO can be altered by compensated donor-acceptor pairs, thus improve the p-type dopability.

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“…These materials can be used as coatings for hot corrosion resistance and thermal barrier protection. The mixed Zn/Zr oxide films have been considered as well as transparent conducting coatings, they have been found to remain stable at high temperatures up to www.crt-journal.org 800 °C and thus they have potential to substitute ITO coatings [22,23]. It has been reported that nanocrystalline ZnO-ZrO 2 powder reveals intense photoluminescence UV emission [24].…”

Section: Introductionmentioning

confidence: 99%

Effect of annealing temperatures on properties of sol‐gel grown ZnO‐ZrO₂ films

Ivanova

Harizanova

Koutzarova

et al. 2010

Cryst. Res. Technol.

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Mixed ZnO-ZrO 2 films have been obtained by sol-gel technology. By using spin coating method, the films were deposited on Si and glass substrates. The influence of thermal annealings (the temperatures vary from 400 °C to 750 °C) on their structural properties has been studied. The structural behavior has been investigated by the means of XRD and FTIR techniques. The results revealed no presence of mixed oxide phases, the detected crystal phases were related to the hexagonal ZnO and to crystalline ZrO 2 . The sol-gel ZnO-ZrO 2 films showed polycrystalline structure with a certain degree of an amorphous fraction. The optical transmittance reached 91% and it diminished with increasing the annealing temperatures. The optical properties of the sol-gel ZnO-ZrO 2 films, deposited on glass substrates are excellent with high transparency and better then those of pure ZrO 2 films, obtained at similar technological conditions.

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Structural, electrical and optical properties of zirconium-doped zinc oxide films prepared by radio frequency magnetron sputtering

Cited by 59 publications

References 28 publications

Deposition Of Oxide And Intermetallic Thin Films By Pulsed Laser (PLD) And Electron Beam (PED) Methods

Deposition Of Oxide And Intermetallic Thin Films By Pulsed Laser (PLD) And Electron Beam (PED) Methods

Design of shallow acceptors in ZnO through early transition metals codoped with N acceptors

Effect of annealing temperatures on properties of sol‐gel grown ZnO‐ZrO₂ films

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Structural, electrical and optical properties of zirconium-doped zinc oxide films prepared by radio frequency magnetron sputtering

Cited by 59 publications

References 28 publications

Deposition Of Oxide And Intermetallic Thin Films By Pulsed Laser (PLD) And Electron Beam (PED) Methods

Deposition Of Oxide And Intermetallic Thin Films By Pulsed Laser (PLD) And Electron Beam (PED) Methods

Design of shallow acceptors in ZnO through early transition metals codoped with N acceptors

Effect of annealing temperatures on properties of sol‐gel grown ZnO‐ZrO2 films

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Product

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Effect of annealing temperatures on properties of sol‐gel grown ZnO‐ZrO₂ films