Structural, electrical and luminescent characteristics of ultraviolet light emitting structures grown by hydride vapor phase epitaxy

Deep traps in GaN-based structures as affecting the performance of GaN devices

“…HVPE growth resulting in relatively low dislocation density in the active GaN region allowed to switch from MQW structure to simple DH structure. The dislocation density in high-performance LEDs emitting near 360 nm was around 5 Â 10 7 -10 8 cm À2 according to EBIC and MCL imaging [363]. The diffusion length of nonequilibrium charge carriers determined from EBIC collection efficiency dependence on accelerating voltage [364] gave the value of 120-150 nm for the active region.…”

“…[363] we presented the studies of the deep traps spectra in near-UV AlGaN/GaN DH LEDs prepared by HVPE. HVPE growth resulting in relatively low dislocation density in the active GaN region allowed to switch from MQW structure to simple DH structure.…”