Structural, electric and multiferroic properties of Sm-doped BiFeO 3 thin films prepared by the sol–gelprocess

Xue, Xu; Tan, Guoqiang; Ren, Huijun; Xia, Ao

doi:10.1016/j.ceramint.2013.01.042

Cited by 95 publications

(29 citation statements)

References 21 publications

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“…Moreover, it is notable that the splitting of the doublet characteristics of the tetragonal structure is not observed clearly in PTO, possibly due to the interface strain-induced tetragonal structure distortion, showing a pseudotetragonal phase in the PTO film. 20,21 Upon increasing x, the (101) and (110) peaks are partially overlapped at x ¼ 0.06 and then overlapped completely at x ¼ 0.33 (see inset of Fig. 1(a)).…”

Section: Resultsmentioning

confidence: 89%

Magnetism switching and band-gap narrowing in Ni-doped PbTiO3 thin films

Zhou

Deng

et al. 2015

Journal of Applied Physics

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Ions doping-driven structural phase transition accompanied by magnetism switching and band-gap narrowing effects has been observed in PbTi 1Àx Ni x O 3Àd (xPTNO, x ¼ 0.00, 0.06, and 0.33) thin films. With the increase of x, the xPTNO thin films exhibit not only a phase transition from the pseudotetragonal structure to a centrosymmetric cubic structure but also a drastic decrease of grain size. Moreover, the as-grown Ni-doped PbTiO 3 (PTO) thin films show obvious room-temperature ferromagnetism and an increased saturation magnetization with increasing the Ni content, in contrast to undoped PTO, which shows diamagnetism. A bound magnetic polaron model was proposed to understand the observed ferromagnetic behavior of PTO-derived perovskite thin films. Furthermore, the 0.33PTNO thin film presents a narrowed band-gap, much smaller than that of PTO, which is attributed to new states of both the highest occupied molecular orbital and the lowest unoccupied molecular orbital in an electronic structure with the presence of Ni. These findings may open up a route to explore promising perovskite oxides as candidate materials for use in multiferroics and solar-energy devices. V C 2015 AIP Publishing LLC. [http://dx.

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Section: Resultsmentioning

confidence: 89%

Magnetism switching and band-gap narrowing in Ni-doped PbTiO3 thin films

Zhou

Deng

et al. 2015

Journal of Applied Physics

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“…Multiplets of peaks from C1 to C4 indicate the successful incorporation of Sm 3+ ion. The doping of Sm 3+ ion (0.964 Å) which has smaller ionic radius than Bi 3+ (1.03 Å), as a result it leads to structural distortion in the lattice sites [8][9][10]. Cell volume increases for concentration C0 to C2 and decline for C3 and C4.…”

Section: Xray Diffraction Studiesmentioning

confidence: 99%

Synthesis and Characterization of Samarium doped SrBi2-xO4 oxides

Chandru¹,

Selvanathan²,

Das³

2017

IOSR JAC

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Sm 3+ doped SrBi 2-x O 4 oxides were prepared by sol -gel method via nitrate citrate route with 'x' values ranging from 0.0, 0.1, 0.2, 0.3, and 0.4 (samples C0 -C4). X-ray powder diffraction analysis reveals the single phase monoclinic structure with the space group of P/2m. Rietveld refinement of unit cell structure shows lowered agreement factors R p , R wp and R exp for all the samples. Average crystallite size was determined by Scherrer's relation in the range of ̴ 36 -45nm. Magnetic properties of the samples were analyzed by using Vibrating Sample Magnetometer at room temperature which reveals a weak ferromagnetic behaviour for C1 to C4 and diamagnetic behaviour for sample C0. EPR studies recorded at liquid helium temperature show a single absorption peak with defect line content. Optical absorption spectra of the prepared samples were recorded in UV visible region from 200nm to 800nm. FT-IR spectra of the samples were recorded at room temperature, which show the characteristic absorptions at 853 cm -1 and 533 cm -1 corresponding to the tetrahedral and octahedral sites. SEM studies show the particles were agglomerated with rod like structure. The combined TGA -DSC measurements show important stages of decomposition with no phase transition.

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“…Various methods have been employed to reduce the leakage current, such as doping impurities on A-, B-or A-B-sites of BFO thin films [7][8][9]. In previous work, the leakage current and ferroelectricity of the BFO thin films has successfully improved by Sm-doping [10]. Among the various approaches to reduce the leakage current of BFO thin films, no remarkable enhancement in the ferromagnetic property is strongly recommended.…”

Section: Introductionmentioning

confidence: 98%