Structural disorder in sapphire induced by 90.3MeV xenon ions

Kabir, A.; Meftah, A.; Stoquert, J.P.; Toulemonde, M.; Monnet, I.; Izerrouken, M.

doi:10.1016/j.nimb.2010.05.087

Cited by 18 publications

(9 citation statements)

References 26 publications

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“…The limited disorder level is probably specific for sapphire because ion-induced amorphization seems to be a two step process as recently reported for ions of 0.6 MeV/u [21,22]. Amorphization was only reached at fluences much higher than those used in the present experiments.…”

Section: Surface Profilometry: Swelling Measurementsupporting

confidence: 66%

“…Aruga et al [19,20] showed by transmission electron microscopy (TEM) that amorphization of sapphire appears with iodine ions at a high fluence of 10 14 cm À2 , leading to a threshold of 9 keV/nm. Total damage was recently confirmed using channelling Rutherford backscattering (c-RBS) with a beam of $1-MeV/u Xe ions (S e = 23 keV/nm) [21,22]. The damage process seems to occur in two steps: above a critical fluence, the surface of the Al 2 O 3 sample is completely damaged, while the bulk is damaged only by $50%.…”

Section: Introductionmentioning

confidence: 98%

“…Beam induced swelling was investigated by profilometry which is a very powerful technique to characterize the sensitivity of materials that are difficult or impossible to amorphize [5,[31][32][33]. Damage produced near the surface was investigated by using channelling Rutherford backscattering spectrometry (c-RBS) [3,4,21,22,34,35]. The combination of these different experiments allowed us to determine the threshold for damage creation with higher accuracy.…”

Section: Introductionmentioning

confidence: 99%

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Damage creation threshold of Al2O3 under swift heavy ion irradiation

Khalfaoui

Stoquert

Haas

et al. 2012

Nuclear Instruments and Methods in Physics Research Section B:

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Section: Surface Profilometry: Swelling Measurementsupporting

confidence: 66%

Section: Introductionmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

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Damage creation threshold of Al2O3 under swift heavy ion irradiation

Khalfaoui

Stoquert

Haas

et al. 2012

Nuclear Instruments and Methods in Physics Research Section B:

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“…14) and UO 2 (ref. 43), while Al 2 O 3 has been shown to undergo both reduction 44 and anion-selective defect accumulation 45 . Anion segregation, accompanied by chemical reduction, has also been observed in Al 2 O 3 irradiated with an ultrafast laser 46 , which, similar to high-energy heavy ions, deposits energy in a material via electronic excitation.…”

Section: Resultsmentioning

confidence: 99%

Redox response of actinide materials to highly ionizing radiation

et al. 2015

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Energetic radiation can cause dramatic changes in the physical and chemical properties of actinide materials, degrading their performance in fission-based energy systems. As advanced nuclear fuels and wasteforms are developed, fundamental understanding of the processes controlling radiation damage accumulation is necessary. Here we report oxidation state reduction of actinide and analogue elements caused by high-energy, heavy ion irradiation and demonstrate coupling of this redox behaviour with structural modifications. ThO 2 , in which thorium is stable only in a tetravalent state, exhibits damage accumulation processes distinct from those of multivalent cation compounds CeO 2 (Ce 3 þ and Ce 4 þ ) and UO 3 (U 4 þ , U 5 þ and U 6 þ ). The radiation tolerance of these materials depends on the efficiency of this redox reaction, such that damage can be inhibited by altering grain size and cation valence variability. Thus, the redox behaviour of actinide materials is important for the design of nuclear fuels and the prediction of their performance.

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“…In recent years, a larger number of investigations on defect formation in sapphire produced by swift heavy ion irradiation have also been carried out [1,3,[15][16][17][18][19][20]. The threshold of damage formation in sapphire via electronic energy loss was estimated to be 18-21 keV/nm in previous studies [1,21].…”

Section: Introductionmentioning

confidence: 99%