2017
DOI: 10.1007/s11172-017-1971-9
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Structural-dimensional effects and their application in the "core—nanoshell" systems synthesized by the molecular layering

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Cited by 20 publications
(5 citation statements)
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“…The specified increase in the thickness of the formed film is easily and very accurately controlled by the number of deposition cycles using the property of self-organization (self-limitation) of surface reactions, which are completed automatically when all reactive areas on the surface are exhausted. In principle, this technology can be implemented by applying atomic layers, for example, by the method of atomic layer deposition (ALD), that was initially proposed by V. B. Aleskovsky in the middle of the twentieth century [360][361][362][363][364].…”
Section: Characteristics and Features Of Methods For The Synthesis Of New Nanostructured Catalystsmentioning
confidence: 99%
“…The specified increase in the thickness of the formed film is easily and very accurately controlled by the number of deposition cycles using the property of self-organization (self-limitation) of surface reactions, which are completed automatically when all reactive areas on the surface are exhausted. In principle, this technology can be implemented by applying atomic layers, for example, by the method of atomic layer deposition (ALD), that was initially proposed by V. B. Aleskovsky in the middle of the twentieth century [360][361][362][363][364].…”
Section: Characteristics and Features Of Methods For The Synthesis Of New Nanostructured Catalystsmentioning
confidence: 99%
“…Its photocatalytic activity can be further enhanced by creating various types of composite materials with metals [12,34], sulfides [36][37][38][39], oxides and clays [40][41][42], or by varying the shape of TiO 2 nanoparticles [43][44][45]. In our present study, we used molecular layer deposition technique [46,47] with subsequent hydrolysis to obtain TiO 2 phase on Mg 3 Si 2 O 5 (OH) 4 nanotubes.…”
Section: Introductionmentioning
confidence: 99%
“…В первом случае исключается интеграция с кремниевой электроникой, во втором резко падает скорость роста, что делает затруднительным получение CdS кубической фазы (c-CdS) хотя бы 100 nm толщины. Цель данного исследования -разработать новый способ получения c-CdS на гибридных подложках SiС/Si, т. е. на подложках Si с тонким буферным слоем SiC (∼ 20−100 nm), методом атомно-слоевого осаждения (atomic layer deposition, ALD) [6], который обеспечивает приемлемую скорость роста c-CdS при низких температурах.…”
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