“…Hence, the correlated barrier hopping (CBH) is the dominant conduction mechanism. These results are consistent with previous reports obtained for Mg-doped ZnO [50], Zndoped SnO 2 [51] and Sn 2 O 3 -doped ZnO pellets [12]. In the CBH model, the electrons in the charged defect states hop over the Coulombic barrier whose height m W is given as:…”
“…Hence, the correlated barrier hopping (CBH) is the dominant conduction mechanism. These results are consistent with previous reports obtained for Mg-doped ZnO [50], Zndoped SnO 2 [51] and Sn 2 O 3 -doped ZnO pellets [12]. In the CBH model, the electrons in the charged defect states hop over the Coulombic barrier whose height m W is given as:…”
“…The variation of S with pressure in Fig. 3(b) is limited to 0.6 < S < 1 and S decreases with the increase in pressure, which indicates a hopping conduction mechanism in the SnO 2 nanoparticles 27–29 . The observed dispersion of conductivity with frequency and pressure is in general agreement with the prediction of the correlated barrier hopping (CBH) model 27,30 .Figure 3( a ) The AC conductivity σ AC versus frequency f for SnO 2 nanoparticles at different compression pressures.…”
The electrical transport and structural properties of tin oxide nanoparticles under compression have been studied by in situ impedance measurements and synchrotron X-ray diffraction (XRD) up to 27.9 GPa. It was found that the conduction of SnO2 can be improved significantly with compression. Abnormal variations in resistivity, relaxation frequency, and relative permittivity were observed at approximately 12.3 and 25.0 GPa, which can be attributed to pressure-induced tetragonal- orthorhombic-cubic structural transitions. The dielectric properties of the SnO2 nanoparticles were found to be a function of pressure, and the dielectric response was dependent on frequency and pressure. The dielectric constant and loss tangent decreased with increasing frequency. Relaxation-type dielectric behaviour dominated at low frequencies. Whereas, modulus spectra indicated that charge carrier short-range motion dominated at high frequencies.
“…High density of oxygen vacancies formed by the introduction of Zn leads to interaction with interfacial Sn that might lead to the formation of a considerable amount of trapped states within the band gap of SnO 2 , giving rise to high PL mixed peaks (~3.35 eV) observed in the samples with x ≥ 0.12. In a similar experiment 13 with Zn doped SnO 2 nanoparticles, room-temperature PL measurements have shown similar peaks, shifted to lower energies. As x increases, another important change observed is the emergence and gradual strengthening of the green band (~2.5 eV), which is commonly attributed to oxygen vacancies, most likely occurring on the surface of the nanocrystals.…”
Section: Experimental Methods and Resultsmentioning
confidence: 55%
“…It showed that as x increases, the crystallite size steadily reduced from 3.2 ± 0.3 nm to 2.2 ± 0.2nm, in agreement with similar results observed by other groups also 12 . There seems to be a nucleation that occurs on the surface due to the introduction of zinc, causing interstitial defects which leads to the formation of tiny crystals 13 . The lattice parameters obtained by these refinement methods 11,14 Magnetic measurements were carried out at room temperature with a Vibrating Sample Magnetometer.…”
Section: Experimental Methods and Resultsmentioning
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