A B S T R A C TLead-free perovskite oxide thin films prepared by alloying of titanates and materials with lower melting points are shown to have enhanced ferroelectric and dielectric properties. BaTiO 3 (or SrTiO 3 ) with 25% addition of BiFeO 3 has much improved crystalline perfection because of the lower melting point of the BiFeO 3 giving enhanced growth kinetics. The maximum dielectric peak temperature of BaTiO 3 is increased by~200°C and leakage currents are reduced by up to a factor of~100. The loss tangent reduces up to 300°C, with a factor of > 14 reduction at room temperature. The dielectric breakdown strength is higher by a factor of~3 (> 2200 kV cm ) and from room temperature up to 500°C the dielectric constant is > 1000. Also, a low variation of dielectric constant of~9% from room temperature to 330°C is obtained, compared to~110% for BaTiO 3 . The maximum polarization (P max ) is double that of BaTiO 3 , at 125.3 μC cm −2. The film has high energy storage densities of > 52 J cm −3 at 2050 kV cm −1 , matching Pb-based ferroelectric films. The strongly improved performance is important for applications in energy storage and in high temperature (up to 300°C) capacitors as well as wider application in other electronic and energy technologies.