Structural, compositional and optical properties of hydrogenated amorphous silicon-carbon alloys

Herremans, H.; Grevendonk, W.; Swaaij, R.A.C.M.M. van; Sark, W.G.J.H.M. van; Berntsen, A. J. M.; Bik, W. M. Arnold; Bezemer, Jeff

doi:10.1080/13642819208220128

Cited by 30 publications

(2 citation statements)

References 25 publications

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“…Apparently, less explicit but still observable are the changes in the region 550-800 cm −1 shown in Figure 3. In the same figure, the observed change of the Si-C bond stretching mode as shown at ~780 cm −1 [23,24] signifies the modification of the Si-C bonding arrangements in the a-SiC:H host material, the mechanism including considerable Si-C bond breaking as a result of the Ga + ion bombardment.…”

Section: Figurementioning

confidence: 80%

Nanoscale Optical Patterning of Amorphous Silicon Carbide for High-Density Data Archiving

Tsvetkova

2020

Multilayer Thin Films - Versatile Applications for Materials Engineering

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The work presented here is related to some developments in providing a new generation ultrastable (>100 years), ultrahigh density (>1 Tbit/sq.in.) data storage materials for archival applications. The chosen material to write nanoscale data by finely focused ion beams is hydrogenated amorphous silicon carbide (a-SiC:H) films. Wide bandgap a-SiC:H has been chosen for its appropriate optical, chemical and mechanical properties. Ga + was prefered as the implant species for the focused ion beam (FIB) implantation due to its widespread uses in FIB equipment and its modifying effects on the amorphous silicon carbide target. A range of a-SiC:H film samples have been FIB patterned under different implantation conditions for this study. The emphasis in these investigations was the influence of different substrate temperatures on the patterning process. The effects of further annealing of room temperature implanted samples were also studied. The FIB patterned samples under different conditions were analysed using near-field techniques, like atomic force microscopy (AFM), to define optimum implantation parameters for archival data storage applications. Using the established optimal conditions for the FIB patterning process of a-SiC:H films, it is expected to achieve the aimed ultrahigh density and stability with this novel data storage method for archival applications.

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Section: Figurementioning

confidence: 80%

Nanoscale Optical Patterning of Amorphous Silicon Carbide for High-Density Data Archiving

Tsvetkova

2020

Multilayer Thin Films - Versatile Applications for Materials Engineering

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“…Upon changing the gas flow ratio y, differences in the single absorption peaks occur. We analyse the SiH stretching modes at wave numbers υ = 2000 cm -1 representing monohydride configurations [10,11], and the ones at υ = 2080 cm -1 representing dihydride or void configurations [11][12][13].…”

Section: Hydrogen Bondingmentioning

confidence: 99%

a‐SiC:H passivation for crystalline silicon solar cells

Ehling

Werner

Schubert

2010

Phys. Status Solidi (c)

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This study aims at a better understanding of the electronic surface passivation of monocrystalline silicon wafers by thin amorphous silicon carbide (a‐SiC:H) layers. Annealing a‐SiC:H coated Si wafers in forming gas up to an annealing temperature Tan = 700 oC, reveals the correlation between the effective charge carrier lifetime τeff and structural features of the a‐SiC:H monitored by Fourier‐Transform Infra Red (FTIR) spectroscopy. Passivation layers with low carbon content yield effective lifetimes τeff > 1 ms for Tan = 600 °C. Increasing the C content lowers the thermal stability of the electronic passivation. Out of detailed FTIR measurements, the absorption strength ratio R permits statements of microvoids in the amorphous layers. Comparing R with the effective lifetimes enables a qualitative forecast concerning the temperature stability of a‐SiC:H passivation layers. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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