Structural classification of layered dichalcogenides of group IV B, V B and VI B transition metals

Madhukar, A.

doi:10.1016/0038-1098(75)90092-7

Cited by 24 publications

(12 citation statements)

References 6 publications

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“…Theory predicts that the smallest stimulus for triggering structural phase transition is in 2H-MoTe 2 261 . To understand what makes MoTe 2 more susceptible to phase transition compared with its counterpart TMDC, an intuitive picture is presented to link the ionic radii of atoms and the preferred phases of different TMDCs 262,263 . First, because of the aforementioned d-orbital splitting, the preferred coordination is trigonal prismatic.…”

Section: Bandgap Closing: Metal-insulator Transitionmentioning

confidence: 99%

“…12a (reproduced from ref. 263 ). As one can see, MoTe 2 is right on the boundary where a transition to the octahedral phase is feasible.…”

Section: Bandgap Closing: Metal-insulator Transitionmentioning

confidence: 99%

“…According to this intuitive picture, any stimuli that increase the anion-anion repulsion (whether by reduction of anions or by tensile strain) would increase the repulsion between the Te atoms. This becomes an additional driving force for phase transition, as the repulsion can be relaxed by adopting the octahedral phase, where the distance between anions is greater 263 (see Fig. 12b).…”

Section: Bandgap Closing: Metal-insulator Transitionmentioning

confidence: 99%

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Bandgap engineering of two-dimensional semiconductor materials

et al. 2020

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Semiconductors are the basis of many vital technologies such as electronics, computing, communications, optoelectronics, and sensing. Modern semiconductor technology can trace its origins to the invention of the point contact transistor in 1947. This demonstration paved the way for the development of discrete and integrated semiconductor devices and circuits that has helped to build a modern society where semiconductors are ubiquitous components of everyday life. A key property that determines the semiconductor electrical and optical properties is the bandgap. Beyond graphene, recently discovered two-dimensional (2D) materials possess semiconducting bandgaps ranging from the terahertz and mid-infrared in bilayer graphene and black phosphorus, visible in transition metal dichalcogenides, to the ultraviolet in hexagonal boron nitride. In particular, these 2D materials were demonstrated to exhibit highly tunable bandgaps, achieved via the control of layers number, heterostructuring, strain engineering, chemical doping, alloying, intercalation, substrate engineering, as well as an external electric field. We provide a review of the basic physical principles of these various techniques on the engineering of quasi-particle and optical bandgaps, their bandgap tunability, potentials and limitations in practical realization in future 2D device technologies.

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Section: Bandgap Closing: Metal-insulator Transitionmentioning

confidence: 99%

“…12a (reproduced from ref. 263 ). As one can see, MoTe 2 is right on the boundary where a transition to the octahedral phase is feasible.…”

Section: Bandgap Closing: Metal-insulator Transitionmentioning

confidence: 99%

Section: Bandgap Closing: Metal-insulator Transitionmentioning

confidence: 99%

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Bandgap engineering of two-dimensional semiconductor materials

et al. 2020

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“…Clearly though, the sulfides of Ta and Nb are not purely ionic. In fact, the Nb-S bond in the NbS 2 lattice is 82% covalent, 27 i.e. somewhat larger than that of the Ta-S bond (78%).…”

Section: Raman Spectroscopymentioning

confidence: 96%

“…Nevertheless, they could also reflect more fundamental structural or chemical reactivity differences, which warranted further investigation. For example, the Ta–S bond is known to have greater ionic character than the Nb–S bond in the layered MS 2 compound . Therefore, the intercalation of tin atoms was found to be easier in NbS 2 than in TaS 2 .…”

Section: Introductionmentioning

confidence: 99%

Nanotubes from the Misfit Compound Alloy LaS-Nb_xTa_(1–x)S₂

Stolovas¹,

Serra²,

Popovitz‐Biro³

et al. 2018

Chem. Mater.

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Misfit layered compounds (MLC) with the composition (LaS) 1.15 TaS 2 (for simplicity denoted as LaS-TaS 2) and LaS-NbS 2 were prepared and studied in the past. Nanotubes of LaS-TaS 2 could be easily synthesized, while tubular structure of the LaS-NbS 2 were found to be rather rare in the product. In order to understand this riddle, quaternary alloys of LaS-Nb x Ta (1-x) S 2 with ascending Nb concentration were prepared herein in the form of nanotubes (and platelets). Not surprisingly, the concentration of these quaternary nanotubes shrinked (and the relative density of platelets increased) with increasing Nb content in the precursor. The structure and chemical composition of such nanotubes was elucidated by electron microscopy. Conceivably, the TaS 2 in the MLC compounds LnS-TaS 2 (Ln=lanthanide atom) crystallizes in the 2H polytype. High resolution transmission electron microscopy showed however that, invariably MLC nanotubes prepared from 80 at% Nb content in the precursor belonged to the 1T polytype. Raman spectroscopy of individual tubes revealed that up to 60 at% Nb, they obey the standard model of MLC, while higher Nb lead to large deviations which are discussed in brief. The analysis indicated also that such nanotubes do not exhibit the pattern assigned to charge density wave transition so typical for binary 1T-TaS 2. The prospect for revealing interesting quasi-1D behavior of such quaternary nanotubes is also briefly discussed.

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Anomalies of sound propagation near orientational phase transitions in antiferromagnets

Mitsek¹,

Kolmakova

Sirota

1975

Physica Status Solidi (b)

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The sound velocity and attenuation anomalies, connected with the orientational phase transitions (OPT) of first and second order, are investigated for antiferromagnets and ferromagnets. For the first order OPT the anomalies are determined by the motion of the domain walls of the transitional domain structure, while for the second order one they are determined by the interaction of the sound wave and nonequilibrium deviations of the magnetization. The consideration of the influence of the magnetic subsystem on the sound propagation is reduced to the renormalization of the elastic constants. The wave equation and general expressions for the renormalization of the elastic constants, sound velocity, and attenuation are received, taking the magnetostriction and piezomagnetism into account. The comparison of the results received and available experimental data reveals the agreement of the theory and experiments. MccnenywrcR aHoManm CKOPOCTH H aaTyxaHaa s~y~a B aHTa@eppoMarHeTkmax II @eppoMarHeTmrax, C B I I~~H H H~ c OpHeHTa~noHHbIMn @~~O B~I M H nepexoaawi HMX rpaHnu nepexomo3 AoMemol c~p y~~y p b~, ~F I

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Structural classification of layered dichalcogenides of group IV B, V B and VI B transition metals

Cited by 24 publications

References 6 publications

Bandgap engineering of two-dimensional semiconductor materials

Bandgap engineering of two-dimensional semiconductor materials

Nanotubes from the Misfit Compound Alloy LaS-Nb_xTa_(1–x)S₂

Anomalies of sound propagation near orientational phase transitions in antiferromagnets

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Structural classification of layered dichalcogenides of group IV B, V B and VI B transition metals

Cited by 24 publications

References 6 publications

Bandgap engineering of two-dimensional semiconductor materials

Bandgap engineering of two-dimensional semiconductor materials

Nanotubes from the Misfit Compound Alloy LaS-NbxTa(1–x)S2

Anomalies of sound propagation near orientational phase transitions in antiferromagnets

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Product

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Nanotubes from the Misfit Compound Alloy LaS-Nb_xTa_(1–x)S₂