Structural characterization of Zr-doped ZnO films deposited on quartz substrates by reactive radio frequency magnetron co-sputtering

Sung, Nark‐Eon; Lee, Kug‐Seung; Lee, Ik-Jae

doi:10.1016/j.tsf.2018.02.011

Cited by 11 publications

(5 citation statements)

References 42 publications

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“…The effect of high temperature very much influence the particle morphology of the as equipped ZnO nanopowder and Nidoped ZnO nanoparticles in different molarities like 0.1, 0.2, and 0.3M. As the molarities concentration increases FWHM (Full Width Half Maximum) increases and at higher molarities concentration value FWHM (Full Width Half Maximum) decreases (14) . The calculated grain size of undoped and Ni-doped ZnO nanoparticles is tabulated in Table 1.…”

Section: Structural Studymentioning

confidence: 99%

Synthesis and Characterization of Ni Doped ZnO Nanoparticles and Study of their Antibacterial Activity

Vijayaraj,

Nedunchezhian,

Sozhaveni

2023

IJST

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Objective:The current study focused on the synthesis of Nickel doped ZnO nanoparticles from the sol-gel technique. Methods: The pre-arranged nanopowder was described by XRD, FTIR, SEM, EDAX, and antibacterial investigations. The X-ray diffraction studies uncover that the incorporated nanoparticles have a wurtzite structure and the molecule size differs from 18 to 31 nm. A change in morphology, after being doped with Nickel, has been noticed. Findings: The Energy Dispersive X-Ray Analysis (EDAX) uncovers that the essential arrangement of arranged examples and the consolidation of the Ni particles into the ZnO cross-section. Escherichia coli, Staphylococcus aureus, Aspergillus flavus, and A. niger were used to test the antibacterial activity of Nidoped ZnO nanoparticles using the plate dispersion method. Novelty: The antibacterial activity improvement with Ni doping effect is attributed to the enhancement of electronic defects including vacancy defect Ni and interstitial defect ZnO with Ni doping Concentration. These defects behave as electrons and holes source necessary for reactive oxygen species (ROS) responsible for bacteria's destruction.

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Section: Structural Studymentioning

confidence: 99%

Synthesis and Characterization of Ni Doped ZnO Nanoparticles and Study of their Antibacterial Activity

Vijayaraj,

Nedunchezhian,

Sozhaveni

2023

IJST

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“…In another study, Madhi et al [12] examined the optical and electrical properties of calcium-doped ZnO thin films and found that the transmittance of ZnO: Ca films was above 80% and the lowest electrical resistivity was about (5.10 −3 Ω.cm) [13]. Sung et al [14], studied Zr doped ZnO thin films grown on quartz substrates by RF sputtering technique and investigated the effect of Zr doping on the optical properties of ZnO. It was found that the optical transparency of the thin films was above 90%, but the optical band gap of the Zr doped ZNO (ZZO) thin films increased with Zr addition.…”

Section: Introductionmentioning

confidence: 99%

Study the effect of Ni doping on structural, optical and electrical properties of Zn1-xNixO thin films deposited by spray pyrolysis technique

Zaouche¹,

Dahbi²,

Benramache³

et al. 2023

JOR

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The effect of Ni doping on structural, optical and electrical properties of deposited Zn1-xNixO thin films on glass substrate by spray pyrolysis technique has been studied. The main objective of this research is to study the change of the physical and optical properties of Zn1-xNixO thin films that are fabricant to semiconductor with different doping levels x. These levels are 0 at.%, 2 at.%, 4 at.%, 8 at.% and 12 at.%. The transmission spectra show that the Zn1-xNixO thin films have a good optical transparency in the visible region from 88 to 95%. The optical gap energy of the Zn1-xNixO thin films varied between 3.25 and 3.35 eV. The urbach energy varied between 65 and 230 meV. However, the Zn0.88Ni0.12O thin films have many defects with maximum value of urbach energy. The Zn0.88Ni0.12O thin films have minimum value of optical gap energy. The Zn0.88Ni0.12O thin films have maximum value of the electrical conductivity which is 9.40 (Ω.cm)-1 . The average electrical conductivity of our films is about (7.52 (Ω.cm)-1 ). XRD patterns of the Zn1- xNixO thin films indicate that films are polycrystalline with hexagonal wurtzite structure.

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“…Furthermore, Zr 4+ (ionic radius of 0.742 Å) and Zn 2+ (ionic radius of 0.745 Å) ions have similar radii and Zr is an n-type doping impurity; thus, it can increase the carrier density in ZnO thin films. (24)(25)(26) Many methods, such as sputtering, pulsed laser deposition (PLD), and the sol-gel method, (27,28) can be used for depositing ZnO thin films. Sputtering is advantageous over the other methods for preparing uniform and large-area films with higher quality.…”

Section: Introductionmentioning

confidence: 99%

“…However, ZZO thin films have seldom been prepared by sputtering, with very little literature available. (26) The aim of this study was to prepare ZZO thin films by sputtering on Corning 1737 glass substrates, which was followed by annealing at different temperatures. We analyzed the effects of the annealing temperature on the structural, optical, and electrical properties of the films.…”

Section: Introductionmentioning

confidence: 99%

Effects of Annealing Temperature on Structural and Optoelectronic Properties of Zr-doped ZnO Thin Films for Photosensors

Yen¹,

Chen²,

Lai³

et al. 2021

Sensors and Materials

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We investigated the effects of the annealing temperature on the optoelectronic properties of Zr-doped ZnO (ZZO) thin films deposited on glass substrates by radio frequency sputtering and annealed at 200, 300, and 400 °C. It was found by X-ray diffraction analysis that all the deposited thin films had a hexagonal crystal structure with polycrystalline grains oriented along the (0 0 2) direction. Furthermore, the film annealed at 400 ℃ had the lowest resistivity among the films due to the growth of grains, as well as the lowest resistivity of 1.5 × 10 −2 Ω•cm, a mobility of 35 cm 2 V −1 s −1 , and a carrier concentration of 4.2 × 10 19 cm −3 . It also had a maximum transmittance of 95% and an energy gap of 3.2 eV. These results show that ZZO thin films subjected to annealing at 400 ℃ are promising for use as stable photosensors.

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Structural characterization of Zr-doped ZnO films deposited on quartz substrates by reactive radio frequency magnetron co-sputtering

Cited by 11 publications

References 42 publications

Synthesis and Characterization of Ni Doped ZnO Nanoparticles and Study of their Antibacterial Activity

Synthesis and Characterization of Ni Doped ZnO Nanoparticles and Study of their Antibacterial Activity

Study the effect of Ni doping on structural, optical and electrical properties of Zn1-xNixO thin films deposited by spray pyrolysis technique

Effects of Annealing Temperature on Structural and Optoelectronic Properties of Zr-doped ZnO Thin Films for Photosensors

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