Structural characterization of threading dislocation in α-Ga2O3 thin films on c- and m-plane sapphire substrates
Hitoshi Takane,
Shinya Konishi,
Yuichiro Hayasaka
et al.
Abstract:We discuss the structure of threading dislocations in α-Ga2O3 thin films grown on c- and m-plane sapphire substrates. The thickness-dependent threading dislocation density in both films directly affects the electrical properties of the films including carrier concentration and mobility. Two distinct types of threading dislocations are identified for each of the c- and m-plane α-Ga2O3 thin films. The c-plane α-Ga2O3 thin film shows Burgers vectors of 1/3[11¯01] and 1/3[112¯0], while the m-plane α-Ga2O3 thin fil… Show more
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