Abstract:The Epitaxial GaN thin films have been fabricated by Ion Beam Assisted Deposition (IBAD) process using nitrogen ions with hyperthermal energies on the polyimides polymer substrates. By applying with the Reflection of High-Energy Electron Diffraction (RHEED), Scanning Electron Microscopy (SEM) and Quantum Design Physical Properties Measurement System, the behaviour of hexagonal GaN thin films is investigated. The result showed that the high quality of the deposited GaN layers kept appearing for many parameters … Show more
Set email alert for when this publication receives citations?
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.