Structural characterization of epitaxial CrxMo1−xalloy thin films

Kaspar, Tiffany C.; Bowden, Mark E.; Varga, Tamás; Wang, C M; Shutthanandan, V.; Joly, Alan G.; Wirth, Brian D.; Kurtz, Richard J.

doi:10.1088/0953-8984/24/9/095001

Cited by 8 publications

(9 citation statements)

References 30 publications

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“…It has been suggested that the crystallographic ORs between the metal film and oxide substrate, especially the bonding between the first layer metal atoms and oxide substrate layer at the interface, determine the properties of metal films22232425. Experiments show that the ORs of interfaces are largely determined by lattice mismatch2026, e.g. Nb2728, Fe2229, V3031, Ta32, and Cr20 on MgO(100) substrates.…”

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confidence: 99%

What determines the interfacial configuration of Nb/Al2O3 and Nb/MgO interface

Fang

et al. 2016

Sci Rep

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Nb films are deposited on single crystal Al2O3 (110) and MgO(111) substrates by e-beam evaporation technique. Structure of Nb films and orientation relationships (ORs) of Nb/Al2O3 and Nb/MgO interface are studied and compared by the combination of experiments and simulations. The experiments show that the Nb films obtain strong (110) texture, and the Nb film on Al2O3(110) substrate shows a higher crystalline quality than that on MgO(111) substrate. First principle calculations show that both the lattice mismatch and the strength of interface bonding play major roles in determining the crystalline perfection of Nb films and ORs between Nb films and single crystal ceramic substrates. The fundamental mechanisms for forming the interfacial configuration in terms of the lattice mismatch and the strength of interface bonding are discussed.

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confidence: 99%

What determines the interfacial configuration of Nb/Al2O3 and Nb/MgO interface

Fang

et al. 2016

Sci Rep

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“…12 However, the film still possessed some strain after deposition, as evidenced by tetragonal distortion in the lattice parameters. 10 In order to investigate the atomic distribution and extent of phase separation in the film, a compositional frequency distribution is plotted using a 200 atom bin size. 31 A binomial probability distribution is used to predict the number of bins for an ion at a particular concentration, if the distribution were statistically random.…”

Section: A Experimental Apt Resultsmentioning

confidence: 99%

“…10,11 High resolution XRD patterns were collected on a Philips X'Pert Materials Research Diffractometer (MRD). Cr 0.61 Mo 0.39 , Cr 0.77 Mo 0.23 , and Cr 0.32 V 0.68 films were chosen for the detailed APT analysis study of the extent of phase separation.…”

Section: Methodsmentioning

confidence: 99%

“…[7][8][9] Therefore, in order to independently study each of the individual mechanisms, fundamental investigations isolating each of those factors are needed. To partially meet such a need, epitaxial metal alloy thin films such as Cr x Mo 1Àx and Cr x V 1Àx were grown by molecular beam epitaxy (MBE) on single crystal MgO substrates to generate metal-oxide interfaces with controlled misfit dislocation densities, 10,11 permitting detailed studies of the radiation response of these interfaces as a function of misfit dislocation density. 12 However, such control is only possible provided the alloy films are homogeneous in composition and no phase separation occurs within the film.…”

Section: Introductionmentioning

confidence: 99%

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Nanoscale phase separation in epitaxial Cr-Mo and Cr-V alloy thin films studied using atom probe tomography: Comparison of experiments and simulation

Devaraj

Kaspar

Ramanan

et al. 2014

Journal of Applied Physics

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Thin film reaction of transition metals with germaniumTailored metal alloy thin film-oxide interfaces generated using molecular beam epitaxy (MBE) deposition of alloy thin films on a single crystalline oxide substrate can be used for detailed studies of irradiation damage response on the interface structure. However, the presence of nanoscale phase separation in the MBE grown alloy thin films can impact the metal-oxide interface structure. Due to nanoscale domain size of such phase separation, it is very challenging to characterize by conventional techniques. Therefore, laser assisted atom probe tomography (APT) was utilized to study the phase separation in epitaxial Cr 0.61 Mo 0.39 , Cr 0.77 Mo 0.23 , and Cr 0.32 V 0.68 alloy thin films grown by MBE on MgO(001) single crystal substrates. Statistical analysis, namely frequency distribution analysis and Pearson coefficient analysis of experimental data was compared with similar analyses conducted on simulated APT datasets with known extent of phase separation. Thus, the presence of phase separation in Cr-Mo films, even when phase separation was not clearly observed by x-ray diffraction, and the absence of phase separation in the Cr-V film were confirmed. V C 2014 AIP Publishing LLC. [http://dx.

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“…Recently, we have explored the effect of nanoscale defects with epitaxial thin films as a model system; the density of nanoscale misfit dislocations can be controlled by varying the film lattice parameter via alloying [9,10]. Here, we employ a similar method to explore the fundamentals of radiation damage resistance in ODS ferritic steels and nanostructured ferritic alloys by attempting to synthesize epitaxial interfaces of Fe/Y 2 O 3 .…”

Section: Introductionmentioning

confidence: 99%

Epitaxial Fe/Y2O3 interfaces as a model system for oxide-dispersion-strengthened ferritic alloys

Kaspar

Bowden

Wang

et al. 2015

Journal of Nuclear Materials

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The fundamental mechanisms underlying the superior radiation tolerance properties of oxidedispersion-strengthened ferritic steels and nanostructured ferritic alloys are poorly understood. Thin film heterostructures of Fe/Y 2 O 3 can serve as a model system for fundamental studies of radiation damage. Epitaxial thin films of Y 2 O 3 were deposited by pulsed laser deposition on 8% Y:ZrO 2 (YSZ) substrates with (100), (110), and (111) orientation. Metallic Fe was subsequently deposited by molecular beam epitaxy. Characterization by x-ray diffraction and Rutherford backscattering spectrometry in the channeling geometry revealed a degree of epitaxial or axiotaxial orientation for Fe(211) deposited on Y 2 O 3 (110)/YSZ(110). In contrast, Fe on Y 2 O 3 (111)/YSZ(111) was fully polycrystalline, and Fe on Y 2 O 3 (100)/YSZ(100) exhibited out-ofplane texture in the [110] direction with little or no preferential in-plane orientation. Scanning transmission electron microscopy imaging of Fe(211)/Y 2 O 3 (110)/YSZ(110) revealed a strongly islanded morphology for the Fe film, with no epitaxial grains visible in the cross-sectional sample. Well-ordered Fe grains with no orientation to the underlying Y 2 O 3 were observed.Well-ordered crystallites of Fe with both epitaxial and non-epitaxial orientations on Y 2 O 3 are a promising model system for fundamental studies of radiation damage phenomena. This is illustrated with preliminary results of He bubble formation following implantation with a helium ion microscope. He bubble formation is shown to preferentially occur at the Fe/Y 2 O 3 interface.

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Structural characterization of epitaxial Cr_xMo_1−xalloy thin films

Cited by 8 publications

References 30 publications

What determines the interfacial configuration of Nb/Al2O3 and Nb/MgO interface

What determines the interfacial configuration of Nb/Al2O3 and Nb/MgO interface

Nanoscale phase separation in epitaxial Cr-Mo and Cr-V alloy thin films studied using atom probe tomography: Comparison of experiments and simulation

Epitaxial Fe/Y2O3 interfaces as a model system for oxide-dispersion-strengthened ferritic alloys

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