1983
DOI: 10.1016/0040-6090(83)90326-7
|View full text |Cite
|
Sign up to set email alerts
|

Structural characterization of Bi2−xSbxS3 films prepared by the dip-dry method

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
2
1

Citation Types

1
49
0
1

Year Published

2009
2009
2016
2016

Publication Types

Select...
7

Relationship

0
7

Authors

Journals

citations
Cited by 89 publications
(57 citation statements)
references
References 10 publications
1
49
0
1
Order By: Relevance
“…The conduction band of Bi 2 S 3 nanoparticles is less anodic than the conduction band of TiO 2 and the valence band is more cathodic than the valence band of TiO 2 [113], enhancing electron injection from the excited state of Bi 2 S 3 into TiO 2 . Bessekhouad et al [114] studied a Bi 2 S 3 /TiO 2 junction prepared by precipitation of different concentrations of Bi 2 S 3 onto TiO 2 .…”
Section: Coupled/composite Tiomentioning
confidence: 99%
See 1 more Smart Citation
“…The conduction band of Bi 2 S 3 nanoparticles is less anodic than the conduction band of TiO 2 and the valence band is more cathodic than the valence band of TiO 2 [113], enhancing electron injection from the excited state of Bi 2 S 3 into TiO 2 . Bessekhouad et al [114] studied a Bi 2 S 3 /TiO 2 junction prepared by precipitation of different concentrations of Bi 2 S 3 onto TiO 2 .…”
Section: Coupled/composite Tiomentioning
confidence: 99%
“…There has been much interest in coupling different semiconductor particles with TiO 2 , with coupled samples such as TiO 2 -CdS, Bi 2 S 3 -TiO 2 , TiO 2 -WO 3 , TiO 2 -SnO 2, TiO 2 -MoO 3, and TiO 2 -Fe 2 O 3 being reported [111][112][113][114][115][116][117][118]. The coupled structure that has received the most attention is that consisting of CdS and TiO 2 colloidal particles.…”
Section: Coupled/composite Tiomentioning
confidence: 99%
“…[24,25] Bi 2 S 3 , which is an important n-type semiconductor with a narrow band gap range from 1.3 to 1.7 eV, [26,27] has been widely investigated in visible-light photocatalysis, thermoelectricity, and photodiode arrays. [28][29][30] Its good conductivity and relatively easy synthetic process further extend its application to photodetectors and solar cells. [31,32] Previously, Bi 2 S 3 nanorod photodetectors with a photoconductive gain of 1.1 and solution-processed Bi 2 S 3 nanocrystalline photodetectors with a photoconductive gain of 10 and a temporal response of 10 ms have been reported.…”
Section: Introductionmentioning
confidence: 99%
“…Such ideal combination of properties of this material makes it one of the suitable semiconducting materials for photovoltaic applications as discussed by the Shockley and Queisser in respect of p-n homojunction solar cells (Shockley and Queisser 1961;Cademartiri et al 2008;Yousefi et al 2012). Also, the relative positions of the conduction band energy levels of nanostructured Bi 2 S 3 and TiO 2 , a widely used semiconductor oxide as a photoanode in solar cell applications , display favorable energetics for electron transformer from the former to the latter (Nayak et al 1983).…”
Section: Introductionmentioning
confidence: 99%
“…The excitons so generated get dissociated at the TiO 2 -Bi 2 S 3 interface due to the favorable interfacial band energetic (see Fig. 5a) leading to effective electron injection from excited Bi 2 S 3 to the conduction band of TiO 2 (Nayak et al 1983). This further results in improved photocurrent (J) in C-30 and so doubling of J sc .…”
Section: Photovoltaic Characterizationmentioning
confidence: 99%