2002
DOI: 10.1016/s0924-4247(01)00898-6
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Structural characterisation of NiTi thin film shape memory alloys

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Cited by 13 publications
(7 citation statements)
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“…In addition, there were peaks at 2θ = (43.5 • , 77.9 • , 92.7 • ), which correspond to the Ni 3 Ti(0 0 4) and Ni 3 Ti(2 1 6) planes, respectively. This suggests the presence of Ni 3 Ti precipitates which could be formed during high temperature aging [3] in the NiTi thin film.…”
Section: Resultsmentioning
confidence: 94%
“…In addition, there were peaks at 2θ = (43.5 • , 77.9 • , 92.7 • ), which correspond to the Ni 3 Ti(0 0 4) and Ni 3 Ti(2 1 6) planes, respectively. This suggests the presence of Ni 3 Ti precipitates which could be formed during high temperature aging [3] in the NiTi thin film.…”
Section: Resultsmentioning
confidence: 94%
“…1 A small change of even 1 atomic percent (at. %) near the equiatomic composition can shift the phase change by as much as 100 °C.…”
Section: Figmentioning
confidence: 99%
“…6,[9][10][11][12][13][14][15] Sputtering is the best option for depositing NiTi thin films because the conventional vacuum evaporation of NiTi leads to the potential problem of difference in evaporation rate due to difference in vapor pressure, thus making composition control more difficult. 1 One of the techniques used for sputtering NiTi onto silicon (Si) wafers is simultaneous cosputtering from a Ni50Ti50 alloy and pure Ti targets. It was noted quite early that the composition of sputtered films from a NiTi target does not match the composition of the target, but rather ends up being Ti deficient.…”
Section: Figmentioning
confidence: 99%
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