Structural characterisation of a GaAs surface wire structure by triple axis X-ray grazing incidence diffraction

Darowski, N.; Paschke, K.; Pietsch, U.; Wang, K. H.; Forchel, A.; Lübbert, D.; Baumbach, Tilo

doi:10.1016/s0921-4526(98)00212-9

Cited by 19 publications

(17 citation statements)

References 7 publications

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“…The detailed design for the latter experimental set-up was described in [13]. The wavelength used in this measurement is λ = 0.136 27 nm, and its spread λ λ is of the order of 10 −5 .…”

Section: Methodsmentioning

confidence: 99%

Topology of Liouville foliations in the Steklov and the Sokolov integrable cases of Kirchhoff's equations

Morozov¹

2004

Sb. Math.

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Elastic relaxation in dry-etched periodic wires fabricated from molecular beam epitaxy grown Si/SiGe multilayers was studied by coplanar and grazing incidence (GID) high-resolution x-ray diffraction. The inhomogeneous strain distribution in the wires was calculated by the finite element method, which provided the input data for simulations of the scattered intensities using kinematical diffraction theory used for comparison with measured reciprocal space maps. A fabrication-induced layer covering the wire surfaces, modifies the strain distribution. Using GID, the geometrical shape of the wires and their in-plane strain can be determined independently of each other.

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Section: Methodsmentioning

confidence: 99%

Topology of Liouville foliations in the Steklov and the Sokolov integrable cases of Kirchhoff's equations

Morozov¹

2004

Sb. Math.

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“…Therefore, we are able to separate the contributions of both effects, strain and shape, by recording the intensity pattern around two symmetrically equivalent in-plane reflections, the strain sensitive (220) and the strain insensitve (2 20). 13 The GID measurements have been performed with the diffractometer in z-axis geometry at experimental station ID03 at the ERSF ͑Grenoble, France͒ using a wavelength of ϭ0.1218 nm, whereas the coplanar high-resolution x-ray diffraction experiments were carried out at the wiggler beamline BW2 at HASYLAB ͑Hamburg, Germany͒ using a wavelength of ϭ0.124 nm. Both experimental stations are equipped with a silicon͑111͒ double crystal monochromator.…”

Section: B Diffraction Techniquesmentioning

confidence: 99%

“…Finally, the GTR's of the weak ͑200͒ Bragg reflection ͑Fig. 11͒ give a measure of the scattering contrast 13 between the base compound of the wire ͑GaAs͒ and the singlequantum well (Ga 0.97 In 0.03 As) embedded into the wire. The diffraction pattern from this reflection is also sensitive to the strain profile.…”

Section: A Freestanding Quantum Wiresmentioning

confidence: 99%

“…The phase shift induced by the SQW and the interference between surface scattered and SQW waves produce an anharmonic modulation of GTR's, typical for ͑200͒ reflection. 13,14 The oscillations of truncation rods dampen rapidly with increasing GTR order. The behavior of diffraction curves from this reflection is very sensitive to the vertical strain gradient within the undersurface region of the wires.…”

Section: A Freestanding Quantum Wiresmentioning

confidence: 99%

“…These contributions can be separated by the inspection of two symmetry-equivalent in-plane Bragg reflections. 13 This technique was applied to investigate the strain distribution in free-standing In x Ga 1Ϫx AsP/InP͓001͔ quantum wire structures. 11 Combining the curve simulations in terms of the distorted wave Born approximation ͑DWBA͒ and finite-element calculations, we found a quantitative correlation between the residual in-plane strain and the PL-energy of GaAs /In x Ga 1Ϫx As/GaAs nanostructures.…”

Section: Introductionmentioning

confidence: 99%

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Evaluation of strain distribution in freestanding and buried lateral nanostructures

et al. 1999

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A free-standing lateral nanostructure based on GaAs͓001͔ containing a Ga 0.97 In 0.03 As single quantum well and similar structures after the overgrowth with GaAs and AlAs, respectively, have been investigated by high-resolution x-ray grazing incidence diffraction ͑GID͒ and conventional x-ray diffraction ͑HRXRD͒. The wire shape of the freestanding structure and the lateral density variation in the overgrown samples, were determined by running scans with constant length of the scattering vector ͑transverse scans͒ across the grating truncation rods ͑GTR's͒ close to the (2 20) reflection. The in-plane strain distribution became available crossing the (220) GTR's by a scan in the longitudinal direction. Exploiting the capability of GID for depth resolution, the in-plane strain distribution was analyzed for different values of depth below the sample surface. The strain analysis was completed by HRXRD measurements close to the ͑004͒ reflection. The x-ray measurements were interpreted in terms of the distorted wave Born approximation applied for GID geometry. The strain distribution is determined by comparing the measured GTR intensities with the corresponding simulations containing the displacement fields obtained from finite-element calculations. At the freestanding wire structure we find laterally compressive strain of about ⌬a/a ʈ ϭϪ2ϫ10 Ϫ3 at the single quantum well ͑SQW͒ with a steep strain gradient close to the wire side walls. Both overgrown samples show pronounced lateral strain variation within the overgrown layer, which still appears up to the completely planar surface. Within the SQW the in-plane strain is still compressive after GaAs overgrowth and of similar amount compared to the freestanding grating. The strain is increased by about 30% after overgrowth with AlAs. For both overgrown samples the strain gradient near the wire side walls is reduced, but reaches a maximum close to the SQW. Accompanied by the defect passivation, these findings explain the difference in the energy shift of the photoluminescence line between freestanding and overgrown lateral nanostructures. ͓S0163-1829͑99͒08047-9͔

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Grazing‐incidence diffraction strain analysis of a laterally patterned Si wafer treated by focused Ge and Au ion beam implantation

Grenzer¹,

Pietsch

Bischoff

2005

Physica Status Solidi (a)

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Strain analysis of a laterally patterned Si‐wafer was carried out utilizing X‐ray grazing‐incidence diffraction with synchrotron radiation. The lateral patterning was done by focused ion beam implantation using an ion source of liquid AuGeSi alloy. Samples were prepared by either 35 keV Au+ ions (dose: 0.2, 2 × 1014 cm–2) or 70 keV Ge++ ions (dose: 8 × 1014 cm–2). It was shown that due to implantation a periodical defect structure is created consisting of both implanted and not implanted stripes. The evaluated depth distribution of defects within the implanted stripes corresponds to that obtained by TRIM calculation. The induced strain distribution, however, shows no periodicity. This can be explained by an overlap of the strain fields created in each implanted stripe. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Structural characterisation of a GaAs surface wire structure by triple axis X-ray grazing incidence diffraction

Cited by 19 publications

References 7 publications

Topology of Liouville foliations in the Steklov and the Sokolov integrable cases of Kirchhoff's equations

Topology of Liouville foliations in the Steklov and the Sokolov integrable cases of Kirchhoff's equations

Evaluation of strain distribution in freestanding and buried lateral nanostructures

Grazing‐incidence diffraction strain analysis of a laterally patterned Si wafer treated by focused Ge and Au ion beam implantation

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