Structural changes of CIGS during deposition investigated by spectroscopic light scattering: A study on Ga concentration and Se pressure

Sakurai, Katsutoshi; Scheer, Roland; Nakamura, S. N.; Kimura, Yasuyuki; Baba, Takashi; Kaufmann, Christian A.; Neisser, A.; Ishizuka, Shogo; Yamada, A.; Matsubara, Koji; Iwata, K.; Fons, Paul; Nakanishi, H.; Niki, Shigeru

doi:10.1016/j.solmat.2006.01.006

Cited by 9 publications

(4 citation statements)

References 10 publications

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“…Bandgap tuning has been widely and successfully employed in fabrication of CIGS TFSCs. Techniques such as substitution of In by Ga and replacement of Se by S can precisely control the bandgap of CIGS thin film [99][100][101][102]. The performance of CIGS TFSCs was significantly improved not only because gradient bandgap was introduced into the absorber layer but also because the conduction band offset (CBO) between buffer layer and CIGS absorber layer was optimized through tuning the conduction band of CIGS thin film [103,105].…”

Section: Bandgap Engineeringmentioning

confidence: 99%

Cu2ZnSnS4 Thin Film Solar Cells: Present Status and Future Prospects

Jiang¹,

Yan²

2013

Solar Cells - Research and Application Perspectives

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Section: Bandgap Engineeringmentioning

confidence: 99%

Cu2ZnSnS4 Thin Film Solar Cells: Present Status and Future Prospects

Jiang¹,

Yan²

2013

Solar Cells - Research and Application Perspectives

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“…1 Process control is realized using laser light scattering (LLS) and pyrometry. 32 The three chalcopyrite thin films for the present study were grown using a constant substrate temperature T 1 ¼ 330 C and different T 2 , which was set to 330 C, 425 C, and 525 C, in order to investigate the effect on the gallium distribution in depth. The integral copper and gallium contents from the three process runs were determined by x-ray fluorescence analysis and are shown in Table I together with the process times used for the different stages.…”

Section: Sample Preparationmentioning

confidence: 99%

Gallium gradients in chalcopyrite thin films: Depth profile analyses of films grown at different temperatures

Mönig

Kaufmann

Fischer

et al. 2011

Journal of Applied Physics

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Cu(In,Ga)Se 2 films are used as absorber layers in chalcopyrite thin film solar cells. As the gallium concentration in the absorber can be used to control the band gap, there have been many efforts to vary the gallium concentration in depth to gain an optimum balance of light absorption, carrier collection, and recombination at different depths of the absorber film, leading to improved quantum efficiency. In this study, we investigate the effect of the maximum substrate temperature during film growth on the depth dependent gallium concentration. For the in-depth gallium concentration analyses, we use two techniques, covering complementary depth ranges. Angle dependent soft x-ray emission spectroscopy provides access to information depths between 20 and 470 nm, which covers the depth range of the space charge region, where most of the photoexcited carriers are generated. Therefore, this depth range is of particular interest. To complement this investigation we use secondary neutral mass spectrometry, which destructively probes the whole thickness of the absorber (%2 lm). The two methods show increasingly pronounced gallium and indium gradients with decreasing maximum substrate temperature. The probing of the complementary depth ranges of the absorbers gives a consistent picture of the in-depth gallium distribution, which provides a solid basis for a comprehensive discussion about the effect of a reduced substrate temperature on the formation of gallium gradients in Cu(In,Ga)Se 2 and the device performance of the corresponding reference solar cells.

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“…The CIGS layer is typically 1 -2.5 μm thick (9). A common composition for commercial CIGS cells is CuIn 0.7 Ga 0.3 Se 2 (10). The known reserve of each element in CIGS is copper 540,000,000 metric tons, indium 11,000 metric tons, gallium abundant but difficult to quantify because gallium exists in small concentrations in other minerals, and selenium 88,000 metric tons (8).…”

Section: Thin-film Chalcogenidesmentioning

confidence: 99%

Natural Resource Limitations to Terawatt Solar Cell Deployment

Tao¹,

Jiang

Tao

2011

ECS Trans.

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The predicted energy demands will reach 28 terawatts by 2050 and 46 terawatts by 2100. The deployment of solar cells as a source of energy will have to expand to a scale of tens of peak terawatts in order to become a noticeable source of energy in the future. Of the current commercial and developmental solar cell technologies, the majority have natural resource limitations that prevent them from reaching a terawatt scale. These limitations include high energy input for crystalline-Si cells, limited material production for GaAs cells, and material scarcity for CdTe, CIGS, dye-sensitized, crystalline-Si, and amorphous Si cells. In this paper, we examine these resource limitations under the best scenarios, i.e. the maximum possible power from each of these solar cell technologies. Without significant technological breakthroughs, these technologies combined would meet only 1 - 2% of our energy demands in 2100.

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Structural changes of CIGS during deposition investigated by spectroscopic light scattering: A study on Ga concentration and Se pressure

Cited by 9 publications

References 10 publications

Cu2ZnSnS4 Thin Film Solar Cells: Present Status and Future Prospects

Cu2ZnSnS4 Thin Film Solar Cells: Present Status and Future Prospects

Gallium gradients in chalcopyrite thin films: Depth profile analyses of films grown at different temperatures

Natural Resource Limitations to Terawatt Solar Cell Deployment

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