Structural change of direct silicon bonding substrates by interfacial oxide out-diffusion annealing

Kato, Taigo; Nakamura, Yoshiaki; Kikkawa, Jun; Sakai, Akira; Toyoda, Eiji; Izunome, Kouji; Nakatsuka, Osamu; Zaima, Shigeaki; Imai, Yasuhiko; Kimura, Shigeru; Sakata, Osami

doi:10.1016/j.tsf.2009.10.075

Cited by 9 publications

(10 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…To estimate the carrier mobility, we plotted the G/G '0.5 -V G curves with the following relation, , (1) where C OX is the capacitance of the buried oxide and V T is the threshold voltage. Using Eq.…”

Section: Resultsmentioning

confidence: 99%

“…Using germanium-on-insulator (GOI) substrates as a transistor channel is promising for producing next-generation transistors because of its high carrier mobilities. In the methods for fabricating GOI substrates, wafer bonding technique [1] offers higher quality Ge layers and buried oxide layer in GOI substrates. However, the fabrication process of GOI substrates based on the wafer-bonding technique has not been optimized yet.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Electrical characterization of wafer-bonded germanium-on-insulator substrates using a four-point-probe pseudo-MOSFET

Iwasaki¹,

Nakamura²,

Kikkawa³

et al. 2010

Extended Abstracts of the 2010 International Conference on Solid State Devices and Materials

Self Cite

View full text Add to dashboard Cite

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Electrical characterization of wafer-bonded germanium-on-insulator substrates using a four-point-probe pseudo-MOSFET

Iwasaki¹,

Nakamura²,

Kikkawa³

et al. 2010

Extended Abstracts of the 2010 International Conference on Solid State Devices and Materials

Self Cite

View full text Add to dashboard Cite

“…Direct wafer bonding 1,2 is a pathway to produce grain boundaries that may not occur naturally. In particular, attractive structures for semiconductor technology can be produced by bonding together a Si{011} wafer and a Si{100} one, with the [001] direction of the first wafer aligned with the [110] direction of the second one [3][4][5][6][7] . Indeed, in this system with mixed orientations, the hole mobility and the electron mobility have opposite enhancement in the wafers, leading to important technological advancements 8 .…”

Section: Introductionmentioning

confidence: 99%

Incommensurate grain boundary in silicon and the silver-ratio sequence

2019

View full text Add to dashboard Cite

A scheme is proposed to solve the structure of incommensurate interfaces, starting from highresolution images of electron microscopy, supplemented by adapted simulation techniques and complemented by theoretical tools. Direct silicon bonding is a way to produce artificial interfaces, in particular incommensurate ones. We focus on a technology-driven tilt grain boundary in silicon. While the Fibonacci sequence, linked to the golden ratio, is a prototype of the quasicrystalline structures, a silver-ratio sequence allows us to analyze this incommensurate interface. The four-fold coordination of the Si atoms is kept at the interface.

show abstract

“…In order to meet this purpose, the use of an X‐ray microdiffraction (XRMD) system using a synchrotron radiation source is required as the appropriate characterization tool as it has a submicrometer‐scale X‐ray probe to characterize microscopic crystallographic properties . Using the XRMD analysis, we recently clarified the microscopic strain distribution along the growth direction in thick AlN heteroepitaxial film grown on periodic trench‐patterned AlN/sapphire template .…”

Section: Introductionmentioning

confidence: 99%

Crystalline property analysis of semipolar (20–21) GaN on (22–43) patterned sapphire substrate by X‐ray microdiffraction and transmission electron microscopy

Arauchi

Takeuchi

Hashimoto

et al. 2015

Physica Status Solidi (b)

View full text Add to dashboard Cite

We have investigated the microscopic crystalline morphology such as lattice plane tilting and defects in semipolar (20–21) GaN films grown on (22–43) patterned sapphire substrates (PSS) by using position‐dependent ω–2θ map measurement of X‐ray microdiffraction (XRMD) combined with transmission electron microscopy (TEM). The results of the position‐dependent ω–2θ map measurement for the GaN (20–21) plane showed periodic variation of the diffraction spot shapes depending on the patterning pitch of the PSS. Broadening of the diffraction spots in the terrace area and single diffraction spots in the grooved one were also observed. These results indicate that the lattice plane tilting of the GaN film depends on the PSS structure and the presence of the defective GaN film on the terrace area where basal plane stacking‐fault generation occurred, as confirmed by TEM.

show abstract

Structural change of direct silicon bonding substrates by interfacial oxide out-diffusion annealing

Cited by 9 publications

References 4 publications

Electrical characterization of wafer-bonded germanium-on-insulator substrates using a four-point-probe pseudo-MOSFET

Electrical characterization of wafer-bonded germanium-on-insulator substrates using a four-point-probe pseudo-MOSFET

Incommensurate grain boundary in silicon and the silver-ratio sequence

Crystalline property analysis of semipolar (20–21) GaN on (22–43) patterned sapphire substrate by X‐ray microdiffraction and transmission electron microscopy

Contact Info

Product

Resources

About