Structural and tunneling properties of magnetic tunnel junctions with Al–O and MgO barrier

X-ray diffraction analysis and Monte Carlo simulations of CoFeB-MgO based magnetic tunnel junctions

“…24 To determine the influence of the buffer layer structure on the crystallographic orientations of magnetic layers in the MTJ stacks, additional samples were prepared. Figure 1 shows the h-2h profiles of Ta(5), Ta(5)/Ru (18), and Ta(5)/Ru(18)/Ta (3) annealed at 340 C. The profile of substrate/Ta (5) for the as deposited and annealed samples did not show any peaks.…”

“…3 in Ref. 24). We assume that increasing of the Ta-Ru interface compositional roughness comes from the intermixing.…”

“…4 To explain the crystallization process of CoFeB, different multilayer structures with CoFeB were examined by high resolution transmission electron microscopy (HRTEM) cross sectional images, 3,6,9,10,[13][14][15] reflective high-energy electron diffraction, 16 x-ray photoemission spectroscopy, [17][18][19][20] x-ray diffraction (XRD), 2,15,21-24 and x-ray reflectometry (XRR). [24][25][26] These XRD studies did not analyze CoFeB crystallization in P-SV compared to EB-SV. Thus, in our work, we present detailed analysis and comparison of (Co 52 Fe 48 ) 75 B 25 crystallization in the P-SV and the EB-SV structures.…”

Effect of Seed Layer on Room Temperature Tunnel Magnetoresistance of MgO Barriers Formed by Radical Oxidation in IrMn-Based Magnetic Tunnel Junctions

“…This has motivated intense research activities over the last five to seven years on MTJs with epitaxial MgO tunnel barriers. [7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22] TMR values up to 1056% at room temperature have been achieved with MgO tunnel barriers fabricated using different techniques. In the work by Dave et al 23) and Choi et al, 24) different methods for the fabrication of MgO tunnel barrier (plasma oxidation of an Mg thin film, oxidation of an Mg film with an oxygen radical source, reactive sputtering of Mg in an Ar/O 2 environment, and RF sputtering of an MgO target, natural oxidation of an Mg film) were used.…”

Thermal stability characterization of tunneling magneto resistive structure for data storage applications

“…So, the MgO is preferable because of crystallization property. With the good atomic orientation in the crystalize structure, the electrons transport has no effect of scattering in the perfect crystal, and give very high TMR ratio(35). In wafer fabrication process, the crystalline layer deposition of MgO sandwiched with two ferromagnetic materials are very importance.…”