“…3a and 4a, for Bi 2 Te 3Àx Se x is consistent with results in the literature. 28,29 Figures 3c and 4c show plots of the Seebeck coefficient S in the same temperature range for Se-and Fe-doped Bi 2 Te 3 , respectively. Here, the Seebeck coefficient values are found to be negative for Se-doped Bi 2 Te 3Àx Se x and positive for Fe-doped Bi 2Ày Fe y Te 3 .…”
Section: Thermoelectric Power Measurementsmentioning
“…3a and 4a, for Bi 2 Te 3Àx Se x is consistent with results in the literature. 28,29 Figures 3c and 4c show plots of the Seebeck coefficient S in the same temperature range for Se-and Fe-doped Bi 2 Te 3 , respectively. Here, the Seebeck coefficient values are found to be negative for Se-doped Bi 2 Te 3Àx Se x and positive for Fe-doped Bi 2Ày Fe y Te 3 .…”
Section: Thermoelectric Power Measurementsmentioning
“…Nickel is a diffusion barrier for preventing copper into the thermoelectric element. However, nickel by itself diffuses into the thermoelectric element [40]. Alternate, metal like Tin being used instead of copper also resulted in the diffusion of Tin into the thermoelectric [41].…”
Section: Metal Contacts For Thermoelectric Materialsmentioning
confidence: 99%
“…Employing nickel as barrier layer resulted in no diffusion of copper into the thermoelectric. Moreover, nickel also acted as a good barrier in the case of Tin bismuth soldering alloy [40]. Nickel diffusion into the thermoelectric element has been observed, but this effect is negligible for both p-type and n-type bismuth telluride alloys, when dealing with bulk materials [40].…”
Section: Metal Contacts For Thermoelectric Materialsmentioning
confidence: 99%
“…Moreover, nickel also acted as a good barrier in the case of Tin bismuth soldering alloy [40]. Nickel diffusion into the thermoelectric element has been observed, but this effect is negligible for both p-type and n-type bismuth telluride alloys, when dealing with bulk materials [40]. Same results are supported by the study conducted about the diffusion of nickel into the thermoelectric interface and confirm the formation of nickel telluride (NiTe 2 ) at the interface of bulk bismuth selenium telluride and nickel [42].…”
Section: Metal Contacts For Thermoelectric Materialsmentioning
confidence: 99%
“…The thickness of the metal layer, diffusion barrier and thermoelectric layer of layered structure could be optimized. Materials like Tantalum Silicon nitride layers can be used as barrier diffusion layer in thermoelectrics [40,49].…”
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