Structural and thermal characterization of Zn2−xCoxTiO4

Santos, Ciro; Capistrano, B. J. S.; Vieira, F. T. G.; Santos, M. R. C.; Lima, Severino Jackson Guedes de; Longo, Elson; Paskocimas, C. A.; Souza, A. G.; Soledade, L. E. B.; Santos, I. M. G.

doi:10.1007/s10973-009-0240-z

Cited by 9 publications

(6 citation statements)

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“…None of the above authors have investigated the role of phonons. Our results consider the coparticipation of photons and phonons, and the obtained indirect allowed optical bandgap is 3.29 eV and the phonon energy obtained as 0.09 eV, which bandgap is higher than that of the previous reports 12, 23–25. If the phonon energy is neglected, the calculated bandgap by Eq.…”

Section: Resultsmentioning

confidence: 40%

“…The exponent n can take values of 2, 1/2, 2/3, and 1/3 for the allowed direct, allowed indirect, forbidden direct and the forbidden indirect transitions, respectively. The previous reports on polycrystalline samples gave the Zn 2 TiO 4 bandgap by estimating the absorption edge and measuring the conductivity, respectively 12, 23–25. However, none of the above authors pointed out the types of interband transition, and no theoretical calculation study has been carried out.…”

Section: Resultsmentioning

confidence: 99%

“…Previous reports on the polycrystalline samples showed that the Zn 2 TiO 4 bandgap was 3.1 eV by estimating the absorption edge 23–25 and measuring the conductivity 12, respectively. None of the above authors have investigated the role of phonons.…”

Section: Resultsmentioning

confidence: 99%

“…Since then there has been no report on the crystal growth of Zn 2 TiO 4 . Thus, all the measured properties of Zn 2 TiO 4 , particularly the bandgap and interband transitions process, have been made only on polycrystalline samples 12, 23–25. Recently, we reported the growth of high‐quality Zn 2 TiO 4 crystals by the optical floating zone method 26, 27.…”

Section: Introductionmentioning

confidence: 99%

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Optical interband transitions in Zn₂TiO₄ single crystals

Li¹,

Li²,

Cui³

et al. 2012

Physica Status Solidi (a)

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A high‐quality Zn2TiO4 crystal was used as a prototype for determination of the optical interband transitions by measuring the absorption spectrum of the crystal along the a‐axes at room temperature in the range of 200–1000 nm. Based on the theory of band‐to‐band transitions, the indirect energy gap and the phonon energy were determined as Egi = 3.29 eV and Ep = 0.09 eV, respectively. Also, this phonon was just the vibrational mode at 721 cm−1 in the Raman spectra, which participated in the indirect transitions of the Zn2TiO4.

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Section: Resultsmentioning

confidence: 40%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Optical interband transitions in Zn₂TiO₄ single crystals

Li¹,

Li²,

Cui³

et al. 2012

Physica Status Solidi (a)

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“…Previous studies of composite oxides with spinel structure (Zinc titanate and Cobalt titanate) showed that these materials were first investigated as a series of heat-resistant pigments [7][8][9]. Recently, M 2 TiO 4 (M = Zn, Mg and Co) spinel-based ceramics are extensively studied as dielectric materials because of its low permittivity and high quality factor [10][11][12].…”

Section: Introductionmentioning

confidence: 99%

A novel low-loss spinel microwave dielectric ceramic CoZnTiO4

Lyu

Sun

et al. 2015

J Mater Sci: Mater Electron

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Spinel CoZnTiO 4 ceramics were synthesized by conventional solid-state method and their microwave dielectric properties were investigated. The crystal structure and microstructures of specimens were studied by XRD and SEM. The CoZnTiO 4 phase forms at a temperatures ranging from 1140 to 1220°C and the dependence of the dielectric properties of the ceramics on the sintering condition is found to be insignificant. The relative densities of the specimens are higher than 95 % for the entire temperature range tested during the experiment. Specimen using CoZnTiO 4 sintered at 1200°C possesses a combination of dielectric properties with e r * 17.31, Q 9 f * 97,571 GHz (where f = 8.84 GHz, is the resonant frequency) and s f * -36.4 ppm/°C, which makes it a suitable candidate material for microwave devices.

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