2017
DOI: 10.1016/j.tsf.2017.06.039
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Structural and piezo-ferroelectric properties of K0.5Na0.5NbO3 thin films grown by pulsed laser deposition and tested as sensors

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Cited by 7 publications
(2 citation statements)
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“…Since 2004, the K x Na 1-x NbO 3 perovskitetype material has been established to be a potential substitute for PZT due to its high piezoelectric coefficient d 33 (up to 300 pC/N [5]) leading to an important investigation of this phase [6,7]. The K x Na 1-x NbO 3 perovskite phase has been investigated in bulk [8], thin films [9], single crystals [10] and for photovoltaic applications [11], energy storage [12], luminescence properties [13], sensors [14] or medical imaging [15]. However, in the KNN system, many other phases of potential interest exist without being thoroughly investigated.…”
Section: Introductionmentioning
confidence: 99%
“…Since 2004, the K x Na 1-x NbO 3 perovskitetype material has been established to be a potential substitute for PZT due to its high piezoelectric coefficient d 33 (up to 300 pC/N [5]) leading to an important investigation of this phase [6,7]. The K x Na 1-x NbO 3 perovskite phase has been investigated in bulk [8], thin films [9], single crystals [10] and for photovoltaic applications [11], energy storage [12], luminescence properties [13], sensors [14] or medical imaging [15]. However, in the KNN system, many other phases of potential interest exist without being thoroughly investigated.…”
Section: Introductionmentioning
confidence: 99%
“…The deposition temperature and oxygen partial pressure effects on the structures and electrical properties of KNN‐based films were also analyzed, and the optimum conditions have been reported for the deposition of the (K 0.5 ,Na 0.5 )NbO 3 and the Li + , Ta 5+ , and CaZrO 3 co‐doped films with pure perovskite phase, better homogeneity, improved crystallization, optimized crystal structure, and electrical properties . The film deposited under optimized conditions at 680 °C and 35 Pa oxygen pressure demonstrated a dielectric constant ( ε r ) of 1185 at 1 kHz, a P r of 14 µC cm −2 , and a coercive field ( E c ) of 82.7 kV cm −1…”
Section: Synthetic Techniquesmentioning
confidence: 99%