Structural and photoluminescence properties of SnO2:Ga films deposited on α-Al2O3 (0001) by MOCVD

Pei, Xuan; Jin, Feng; Ma, Jin; Ti, Ning; Song, Zhenguo; Tan, Yongliang; Luan, Caìna

doi:10.1016/j.jlumin.2010.02.019

Cited by 18 publications

(3 citation statements)

References 20 publications

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“…5–7 can be fitted from 90 to 380 K.] The relevant parameters obtained in the fitting processes are listed in Table . Inspection of Table indicates that the values of

E_{1}

and

E_{2}

are

\sim 100 \pm

20 and

\sim 30 \pm

7 meV, respectively, which are consistent with the activation energies of the donor levels formed by oxygen vacancies in SnO 2 . Recently Viana et al .…”

Section: Resultssupporting

confidence: 74%

Structures, optical properties, and electrical transport processes of SnO₂ films with oxygen deficiencies

Zhang

et al. 2013

Physica Status Solidi (b)

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The structures, optical and electrical transport properties of SnO2 films, fabricated by rf sputtering method at different oxygen partial pressures, were systematically investigated. It has been found that preferred growth orientation of SnO2 film is strongly related to the oxygen partial pressure during deposition, which provides an effective way to tune the surface texture of SnO2 film. All films reveal relatively high transparency in the visible range, and both the transmittance and optical band gap increase with increasing oxygen partial pressure. The temperature dependence of resisitivities was measured from 380 K down to liquid helium temperatures. At temperature above K, besides the nearest‐neighbor‐hopping process, thermal activation processes related to two donor levels ( and 100 meV below the conduction band minimum) of oxygen vacancies are responsible for the charge transport properties. Below K, Mott variable‐range hopping conduction process governs the charge transport properties at higher temperatures, while Efros–Shklovskii (ES) variable‐range‐hopping conduction process dominates the transport properties at lower temperatures. Distinct crossover from Mott type to ES type variable‐range‐hopping conduction process at several to a few tens kelvin are observed for all SnO2 films.

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“…5–7 can be fitted from 90 to 380 K.] The relevant parameters obtained in the fitting processes are listed in Table . Inspection of Table indicates that the values of

E_{1}

and

E_{2}

are

\sim 100 \pm

20 and

\sim 30 \pm

7 meV, respectively, which are consistent with the activation energies of the donor levels formed by oxygen vacancies in SnO 2 . Recently Viana et al .…”

Section: Resultssupporting

confidence: 74%

Structures, optical properties, and electrical transport processes of SnO₂ films with oxygen deficiencies

Zhang

et al. 2013

Physica Status Solidi (b)

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“…50 A photoluminescence study of Gadoped SnO 2 films has indicated that some Ga replaces Sn substitutionally, but a reasonable degree of Ga sits on interstitial sites, where it acts as a donor. 51 This self-compensating behaviour would be detrimental to p-type TCO performance.…”

Section: Introductionmentioning

confidence: 99%

On the possibility of p-type SnO2

2012

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“…Pure and doped SnO 2 has been popular researched and widely used in many fields such as solar cells, flat-panel displays and other optoelectronic devices [4,5]. In the element of group III, In-doped and Ga-doped SnO 2 films have been studied [6,7]. But few reports have been published on Al-doped SnO 2 films.…”

Section: Introductionmentioning

confidence: 99%

Transparent Conducting SnO2:Al Films Prepared on α-Al2O3 (0001) by MOCVD

Feng

Tan

et al. 2014

AMR

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1-10% (atomic ratio of Al/Sn) Aluminium-doped tin oxide (SnO2:Al) single crystalline films were prepared on α-Al2O3(0001) substrates by the metalorganic chemical vapor deposition (MOCVD) method. The films were annealed in air at 400 °C, 700°C, 800°C and 900°C, respectively. The structural, electrical and optical properties of the samples were investigated. The obtained films were rutile structure with high a-axis orientation. The Hall mobility and carrier concentration of the samples were varied with the Al concentration increasing and different anneal temperature. The average transmittance for the SnO2:Al films in the visible range was over 82% and the absorption edge shifted to the shorter wavelength with Al concentration increasing. The position of Al3+ in the lattice was influenced by anneal temperature. After high temperature annealed, the location of SnO2(200) diffraction peak shifted slightly towards low 2θ direction which was due to the lattice relaxation, and the absorption edge of the films shifted to the shorter wavelength because of the Burstein-Moss effect.

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Structural and photoluminescence properties of SnO2:Ga films deposited on α-Al2O3 (0001) by MOCVD

Cited by 18 publications

References 20 publications

Structures, optical properties, and electrical transport processes of SnO₂ films with oxygen deficiencies

Structures, optical properties, and electrical transport processes of SnO₂ films with oxygen deficiencies

On the possibility of p-type SnO2

Transparent Conducting SnO<sub>2</sub>:Al Films Prepared on α-Al<sub>2</sub>O<sub>3</sub> (0001) by MOCVD

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Structural and photoluminescence properties of SnO2:Ga films deposited on α-Al2O3 (0001) by MOCVD

Cited by 18 publications

References 20 publications

Structures, optical properties, and electrical transport processes of SnO2 films with oxygen deficiencies

Structures, optical properties, and electrical transport processes of SnO2 films with oxygen deficiencies

On the possibility of p-type SnO2

Transparent Conducting SnO<sub>2</sub>:Al Films Prepared on α-Al<sub>2</sub>O<sub>3</sub> (0001) by MOCVD

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Product

Resources

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Structures, optical properties, and electrical transport processes of SnO₂ films with oxygen deficiencies

Structures, optical properties, and electrical transport processes of SnO₂ films with oxygen deficiencies