Structural and Photoluminescence Properties of Graphite-Like Carbon Nitride

Баглов, А. В.; Чубенко, Е. Б.; Hnitsko, A. A.; Борисенко, В. Е.; Malashevich, A. A.; Углов, В.В.

doi:10.1134/s1063782620020049

Cited by 14 publications

(9 citation statements)

References 13 publications

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“…/74.25 (500°C)g-C 3 N 4 (500°C)and that heat treatment of Zn(O 2 CCH 3 ) 2 •2H 2 O in this temperature range yielded crystalline ZnO, in agreement with previously reported results[18,19]. Heat treatment of the stoichiometric mixture of the starting materials, containing 25.75 wt % CS(NH 2 ) 2 and 74.25 wt % Zn(O 2 CCH 3 ) 2 •2H 2 O, allowed us to obtain a composite consisting of g-C 3 N 4 and ZnS with a cubic (sphalerite) structure, as was evidenced by the set of reflections characteristic of this semiconductor and observed in its X-ray diffraction pattern (Fig.1).…”

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Structural and Phase Transformations in the Thiourea/Zinc Acetate System

et al. 2022

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Using differential thermal analysis and thermogravimetry, we have studied thermal decomposition of a mechanical mixture of thiourea and zinc acetate, resulting in the formation of a composite material consisting of graphitic carbon nitride and zinc acetate, g-C 3 N 4 /ZnS, and possibly containing zinc oxide (ZnO) inclusions. In the case of a mixture containing the stoichiometric sulfur : zinc ratio for zinc sulfide synthesis, one can obtain a material containing only ZnS semiconductor crystals embedded in a g-C 3 N 4 matrix. ZnS is formed in the temperature range 317-367°C as a result of decomposition of zinc complexes with thiourea. Heating the mixture to above 560°C increases the rate of the thermal decomposition of g-C 3 N 4 , which reaches completion between 720 and 740°C. The presence of oxygen in the reaction atmosphere also accelerates this process, without significantly changing the temperature range of synthesis or decomposition of reaction products. The proposed technique can be used for the synthesis of g-C 3 N 4 -based composite materials and other semiconducting metal sulfides.

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confidence: 92%

Structural and Phase Transformations in the Thiourea/Zinc Acetate System

et al. 2022

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“…Crucible was heated at the rate of 5 C min À1 in a muffle furnace to 500-625 C, kept at the fixed temperature for 30 min and cooled down within 12 h to the room temperature like in our previous experiment. [13][14][15]35] Morphology of the synthesized composites was analyzed with scanning electron microscopy (SEM) using Hitachi S-4800 operating at the electron acceleration voltage of 15 kV. Atomic composition of the composites was studied with EDX using Bruker QUANTAX 200 EDX spectrometer.…”

Section: Methodsmentioning

confidence: 99%

“…Crucible was heated at the rate of 5 °C min −1 in a muffle furnace to 500–625 °C, kept at the fixed temperature for 30 min and cooled down within 12 h to the room temperature like in our previous experiment. [ 13–15,35 ]…”

Section: Methodsmentioning

confidence: 99%

One‐Step Synthesis of Visible Range Luminescent Multicomponent Semiconductor Composites Based on Graphitic Carbon Nitride

Чубенко

Баглов

Борисенко

2020

Advanced Photonics Research

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Graphitic carbon nitride (g-C 3 N 4) started to be thoroughly studied in recent decade because of its photocatalytic properties [1,2] and promising potential for production of hydrogen and hydrocarbon fuel. [3] An effective light absorption in the visible range makes this organic semiconductor (E g ¼ 2.70-2.88 eV room temperature) [1,2] to be very attractive for combination with wide bandgap inorganic semiconductors to get an increased photocatalytic activity supposing Z-scheme transfer of photogenerated charge carriers in composite heterostructures which could be also useful for novel light-emitting devices. [4] However, the synthesis of g-C 3 N 4 heterojunction systems usually consists of multiple steps intended to construct multilayered or core-shell-like structures and includes many intermediate operations. Fabrication of composites based on g-C 3 N 4 and wide bandgap semiconductors is a reasonable strategy to achieve good catalytic performance of the materials without using expensive noble or rare metals. [2,5] Energy positions of conduction band (CB) and valence band (VB) edges in ZnO, TiO 2 , ZrO 2 , ZnS, SiC, and some ternary semiconductor compounds at normal pH is "lucky" enough to maintain efficient heterogeneous photocatalysis. [6] Meanwhile, photocatalysis is not the only application area for g-C 3 N 4. Scientific community in a pursuit of perfect photocatalyst almost ignored using g-C 3 N 4 as a light-emitting material despite its bright wide range luminescence. There are some attempts undertaken to fabricate white light-emitting devices using this material as a luminophore, combining it with oxides (silica), [7] semiconductors (ZnO), [8] phosphorus (Y 2 MoO 6 :Eu 3þ), [9] and organic compounds (2-aminothiophene-3-carbonitrile). [10] Both in the attempts to obtain efficient photocatalytic coatings or light-emitting devices to unleash the potential of g-C 3 N 4 fabrication of multicomponent systems consisting of g-C 3 N 4 itself and complimentary wide bandgap semiconductors are needed. Semiconducting ZnO (E g ¼ 3.37 eV) [6] and ZnS (E g ¼ 3.54 eV) [6] suit well to construct binary or ternary heterogeneous systems including g-C 3 N 4. Among others such composites were claimed to possess better photocatalytic and photovoltaic properties. [1,11,12] Meanwhile note that the proposed fabrication process is complicated and time consuming: each compound was synthesized individually and then they were mixed to obtain semiconductor particles decorated with g-C 3 N 4 flakes. [11,12] Moreover, the produced composites have remained poorly studied. Herein, we describe a new facile approach for synthesis of ternary g-C 3 N 4-based heterojunction composites promoting our previous experimental techniques. [13-15] It exploits the idea to synthesize interconnecting g-C 3 N 4 , semiconducting metal oxide and metal sulfide by pyrolytic decomposition of thiourea and metal acetate in their mixture followed by in situ chemical interaction and polymerization of the products. Thiourea provides tri-s-triazine units for construc...

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“…Bright luminescence in the visible range and high photocatalytic efficiency of graphitic carbon nitride ( g -C 3 N 4 ), which is a wide band gap semiconductor (2.70–2.88 eV), , resulted in a great amount of research efforts on this material carried out by the global scientific community till date. − However, one can admit that electronic properties of the material and its application in electronics and optoelectronics remain notably out of the research scope. One of the reasons is that conventional synthesis of g -C 3 N 4 employs thermal decomposition of precursors (melamine, urea, thiourea, cyanamide, and dicyanamide) followed by polymerization of the products in closed space crucibles. − The produced material has a form of a yellowish-white bulk crust usually consequently grinded down into a fine powder. , In that form, it is neither directly suitable for electronic nor optoelectronic devices. Thin films deposited on flat substrates are necessary for that applications.…”

Section: Introductionmentioning

confidence: 99%

Chemical Vapor Deposition of 2D Crystallized g-C₃N₄ Layered Films

et al. 2022

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We have developed a technology and for the first time, present here, the fabrication of continuous two-dimensionally crystallized g-C3N4 layered thin films oriented in a hexagonal lattice c-plane on glass and monocrystalline silicon substrates using chemical vapor deposition from a melamine source. Scanning electron microscopy and X-ray diffraction studies revealed that such films with a smooth surface and good crystalline quality as thick as up to 1.2 μm can be formed at a synthesis temperature of 550–625 °C. They are transparent in the visible range and demonstrate intense photoluminescence (PL) at room temperature. It was found that the band gap of the obtained material and its PL spectral range are shifting to the lower energies at high synthesis temperatures. Oriented g-C3N4 layered thin films deposited on flat solid substrates are promising for integrated electronics and optoelectronics.

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Structural and Photoluminescence Properties of Graphite-Like Carbon Nitride

Cited by 14 publications

References 13 publications

Structural and Phase Transformations in the Thiourea/Zinc Acetate System

Structural and Phase Transformations in the Thiourea/Zinc Acetate System

One‐Step Synthesis of Visible Range Luminescent Multicomponent Semiconductor Composites Based on Graphitic Carbon Nitride

Chemical Vapor Deposition of 2D Crystallized g-C₃N₄ Layered Films

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Structural and Photoluminescence Properties of Graphite-Like Carbon Nitride

Cited by 14 publications

References 13 publications

Structural and Phase Transformations in the Thiourea/Zinc Acetate System

Structural and Phase Transformations in the Thiourea/Zinc Acetate System

One‐Step Synthesis of Visible Range Luminescent Multicomponent Semiconductor Composites Based on Graphitic Carbon Nitride

Chemical Vapor Deposition of 2D Crystallized g-C3N4 Layered Films

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Chemical Vapor Deposition of 2D Crystallized g-C₃N₄ Layered Films