Structural and photoluminescence characteristics of ZnO films by room temperature sputtering and rapid thermal annealing process

Effect of Rapid Thermal Annealing on Sputtered CaCu3Ti4O12 Thin Films

“…This method has many advantages, such as short annealing time, rapid grain growth, and prevention of strain or reaction at the film-substrate interface; these factors result in a dense microstructure. 16,17 Experimental results demonstrate that the processing parameters influence the dielectric properties of the CCTO thin films. The effect of annealing conditions on the surface morphology and the dielectric properties of CCTO thin films are presented.…”

In-situ post-annealing technique for improving piezoelectricity and ferroelectricity of Li-doped ZnO thin films prepared by radio frequency magnetron sputtering system

“…Previous studies have used a tubular furnace 9-11 for annealing or rapid thermal annealing (RTA). [12][13][14] Velu et al 15 compared both methods and found that RTA prevented the degradation of the film-substrate interface. However, those samples needed to be taken out from the deposition chamber and then put into the annealing system.…”

“…The highest remnant polarization P r is 0.655 lC/cm 2 as annealed at 600 C, which is larger than those reported Li-doped ZnO thin films. 13,18,26,27 To further elucidate the results based on improving the ferroelectricity of LZO films, the X-ray photoelectron spectroscopy (XPS) was employed and Gaussian fitting was used in the deconvolution of all peaks. Figure 5(a) shows a main core level binding energy of Zn-2p 3/2 located at 1022.3 eV, which is associated with Zn in the oxide form (Zn 2þ ).…”

Structural and optical properties of SbAl co-doped ZnO nanowires synthesized using Nanoparticle Assisted Pulsed Laser Deposition (NAPLD) with Sb as catalyst

“…This has been confirmed from the Raman spectroscopic analysis The suppression of A 1 T modes at 380 cm −1 and E 1 (L0) modes at 556 cm −1 are observed in the Sb Al co-doped nanowires annealed at 650 • C as compared to the samples annealed at 450 • C. The A1 T modes corresponds to lattice irregularities such as oxygen defect or the dopant atom along the c-axis and E 1 (L0) modes are associated with the structural defects related to oxygen vacancies [39]. The suppression of these models will lead thus leading to reduction in visible emission and improvement in UV emission as observed in room temperature PL [40,41,36].…”