Structural and photoluminescence analysis of Zn1−xMnxO nanocrystalline powders

Sol–Gel-Derived ZnO:Mn Nanocrystals: Study of Structural, Raman, and Optical Properties

“…7,52 The energy interval between the bottom of the conduction band and the zinc vacancy (V Zn ) level (∼3.06 eV) tells us that the violet emission around 411 nm may be related to zinc vacancies. The energy interval between interstitial Zn level (Zn i ) and the valence band is consistent 53 with the energy (∼2.9 eV) of the violet-blue emission at 434 nm observed in our experiment.…”

“…This UV emission (NBE) peak (at 384 nm) originates from the recombination of free excitons through an exciton–exciton collision process. , The energy interval between the bottom of the conduction band and the zinc vacancy ( V Zn ) level (∼3.06 eV) tells us that the violet emission around 411 nm may be related to zinc vacancies. The energy interval between interstitial Zn level (Zn i ) and the valence band is consistent with the energy (∼2.9 eV) of the violet-blue emission at 434 nm observed in our experiment. The violet-blue and blue emission around 434 and 464 nm may be attributed to the defect-related positively charged Zn vacancies. , …”

Transition and transport behavior in spinel oxide MgTi2O4 and its La-doped counterparts

“…The ionic radius of the La 3þ and Mg 2þ is 0.118 nm and 0.072 nm, respectively. According to the Vegard's law [18,19], the substituting La 3þ for Mg 2þ ions in the MgTi 2 O 4 should expand the unit cell. However, in the spinel compounds Mg 1Àx La x Ti 2 O 4 , three Mg 2þ ions are replaced by two La 3þ ions plus a vacancy based on the assumption that the TieO is not changed.…”

Spectroscopic and magnetic properties of Mn doped GaN epitaxial films grown by plasma assisted molecular beam epitaxy

“…Further increase of Mn content has significantly reduced crystalline quality; the formation of Mn 4 N clusters have been observed in HR-XRD profiles; and such films does not showed any near band edge PL emission. The complete suppression of band edge emission could be due to the defects such as point defects, dislocations and dangling bonds that behave as non-radiative centres in reducing the band edge emission intensity [19,20]. The emission peak position (red shift) shifts towards longer wavelength side about 4 nm (310 meV) upon Mn doping; which is shown in inset of Fig.…”