Structural and optical properties of InAs quantum dot chains grown on nanoimprint lithography structured GaAs with different pattern orientations

Abstract

We use large-scale UV nanoimprint lithography prepatterned GaAs substrates for site-controlled growth of InAs quantum dot chains by molecular beam epitaxy. We demonstrate simultaneous fabrication of quantum dot chains with high optical quality along four different crystal orientations, [011], [011¯], [010], and [001]. We show that the [011¯], [010], and [001]-oriented quantum dot chains not only have similar morphology but also experience similar in-plane optical anisotropy, which tends to align along the axis of the quantum dot chain. Our optical and structural results show that InAs quantum dot chains could be a potential platform for nanophotonic waveguiding and integrated circuits.

The Role of Groove Periodicity in the Formation of Site-Controlled Quantum Dot Chains

“…Moreover, another interesting topic emerged related to ordering of QDs in various kinds of arrays, such as in chains of QDs. QD chains create a bridge from zero-to onedimensional nanostructures and show interesting optical [17][18][19] and transport behaviors [20]. Previously, we could show that InAs QD chains grown onto groove-like patterns show different growing behaviors than their selfassembled counterparts, and thus their optical properties show differences [21].…”

The Role of Groove Periodicity in the Formation of Site-Controlled Quantum Dot Chains

“…Moreover, another interesting topic emerged related to ordering of QDs in various kinds of arrays, such as in chains of QDs. QD chains create a bridge from zero- to one-dimensional nanostructures and show interesting optical [17–19] and transport behaviors [20]. Previously, we could show that InAs QD chains grown onto groove-like patterns show different growing behaviors than their self-assembled counterparts, and thus their optical properties show differences [21].…”

Quantitative study of the interfacial intermixing and segregation effects across the wetting layer of Ga(As,Sb)-capped InAs quantum dots

“…1 Present efforts focus on the development of new GaAs-based functional units, where nanostructures based on quantum dots (QDs) remain as one of the most promising options. [2][3][4] The incorporation of antimony into (In,Ga)As QDs has been found to be an effective solution to redshift the emission, due to the possibility of a staggered type-II band alignment for antimony contents above 14%. 5 Indeed, room temperature emission at 1.6 lm has already been reported with Ga(As,Sb)-capped (In,Ga)As QDs.…”