Structural and Optical Properties of GaN Nanowires Formed on Si(111)

Abstract

We discuss the structural and optical characteristics of GaN nanowires (NWs) grown on Si(111) substrates by a plasmaassisted molecular-beam epitaxy. The GaN NWs with high crystal quality were formed by adopting a new growth approach, so called Ga pre-deposition (GaPD) method. In the GaPD, only Ga was supplied without nitrogen flux on a SiN/Si surface, resulting in the formation of Ga droplets. The Ga droplets were used as initial nucleation sites for the growth of GaN NWs. The GaN NWs with the average heights of 60.10 to 214.62 nm obtained by increasing growth time. The hexagonal-shaped top surfaces and facets were observed from the field-emission electron microscope images of GaN NWs, indicating that the NWs have the wurtzite (WZ) crystal structure. Strong peaks of GaN (0002) corresponding to WZ structures were also observed from double crystal x-ray diffraction rocking curves of the NW samples. At room temperature, free-exciton emissions were observed from GaN NWs with narrow linewidth broadenings, indicating to the formation of high-quality NWs.

Rotational molding of self‐hybrid composites based on linear low‐density polyethylene and maple fibers

“…This led to a successful development of polymer composites reinforced with natural fibers for applications in the automotive, construction, and packaging industry . However, natural fibers have some limitations such as low moisture resistance and incompatibility with hydrophobic polymers leading to poor interfacial adhesion and mechanical properties . To overcome these problems, several techniques have been proposed such as chemical (silane and mercerization) and physical (plasma and corona) surface treatments, and coupling agent addition (maleic anhydride) .…”

“…However, natural fibers have some limitations such as low moisture resistance and incompatibility with hydrophobic polymers leading to poor interfacial adhesion and mechanical properties . To overcome these problems, several techniques have been proposed such as chemical (silane and mercerization) and physical (plasma and corona) surface treatments, and coupling agent addition (maleic anhydride) . In our previous study, maleated polyethylene (MAPE) in solution was used to modify maple fibers .…”

Flexible 1.3 μm photodetector fabricated with InN nanowires and graphene on overhead projector transparency sheet

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Manipulation of Photoelectrochemical Water Splitting by Controlling Direction of Carrier Movement Using InGaN/GaN Hetero-Structure Nanowires

“…As a first step, gallium (Ga) droplets are formed only by supplying Ga flux on the Si(111) substrate (step 1). This process is the so-called Ga pre-deposition method and was reported in our previous studies [ 9 , 19 , 20 , 21 , 22 ]. Next, Ga flux is supplied under nitrogen (N)-plasma condition to form GaN NWs (step 2).…”