Structural and optical properties of Cu(In,Ga)Se2 grown by close-spaced vapor transport technique

Close spaced vapor transport deposition of Cu2ZnSnS4 thin films: Effect of iodine pressure

“…After this ingot growth, the tube was cooled to room temperature at a rate of 5 °C/min. The CZTS alloy ingot was then reduced to a fine powder and used as a material source in the CSVT system designed by Djessas et al [16] for CZTS thin films growth. The milling conditions have been optimized to develop powder grain sizes of a few tens of micrometers.…”

The Effect of Sulfurisation Temperature on Structural Properties of CuAlS2 Thin Films

“…The emergence of reflection peaks with increase in sulfurisation temperature is a clear improvement in crystallinity of the films. [14] attributed this to interdiffusion of sulfur and restructuring of particles at a sulfurisation temperature itself during sulfurisation process. For films grown at very low substrate temperature, sulfurisation temperature augment particle's gain in thermal energy which enhances their restructuring, enlarge grain size and reduce defects thus leading to crystalline film.…”

CuIn0.7Ga0.3Se2 thin films’ properties grown by close-spaced vapor transport technique for second-generation solar cells

“…In contrast, the close-spaced vapor transport technique (CSVT), using iodine as transport agent offers several advantages among them, simplicity and the possibility to use a large substrate with large surfaces. This method is of less cost since that, the elaboration of CIGS polycrystalline thin films is done without secondary vacuum [11][12][13][14].…”