Structural and optical properties of a layered ε-GaSe thin film under elastic deformation from flexible PET substrate

Bassou, A.; Rajira, A.; El-Hattab, M.; Haskouri, Jamal El; Murcia‐Mascarós, Sonia; Almaggoussi, A.; Abounadi, A.

doi:10.1016/j.spmi.2022.107152

Cited by 7 publications

(2 citation statements)

References 50 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…For example, the photodetectors based on 2D layered structures of GaSe showed high performance of photoresponse in the UV and visible regions [ 19 , 22 , 25 , 26 ]. The GaSe thin film consisting of a few layers displayed a significant absorption coefficient [ 20 ]. Furthermore, strong second-harmonic generation was found in atomic layered GaSe [ 27 , 28 ].…”

Section: Introductionmentioning

confidence: 99%

“…GaS and GaSe crystals can be fabricated into atomically thin, two-dimensional (2D) layered structures [17][18][19][20][21][22][23] due to the weak van der Waals forces between their adjacent monolayers [1,24]. Recent research has highlighted the intriguing properties exhibited Nanomaterials 2024, 14, 701 2 of 10 by these 2D layered structures.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Photoelectric Properties of GaS1−xSex (0 ≤ x ≤ 1) Layered Crystals

Shih,

Lin,

Tseng

et al. 2024

Nanomaterials

View full text Add to dashboard Cite

In this study, the photoelectric properties of a complete series of GaS1−xSex (0 ≤ x ≤ 1) layered crystals are investigated. The photoconductivity spectra indicate a decreasing bandgap of GaS1−xSex as the Se composition x increases. Time-resolved photocurrent measurements reveal a significant improvement in the response of GaS1−xSex to light with increasing x. Frequency-dependent photocurrent measurements demonstrate that both pure GaS crystals and GaS1−xSex ternary alloy crystals exhibit a rapid decrease in photocurrents with increasing illumination frequency. Crystals with lower x exhibit a faster decrease in photocurrent. However, pure GaSe crystal maintains its photocurrent significantly even at high frequencies. Measurements for laser-power-dependent photoresponsivity and bias-voltage-dependent photoresponsivity also indicate an increase in the photoresponsivity of GaS1−xSex as x increases. Overall, the photoresponsive performance of GaS1−xSex is enhanced with increasing x, and pure GaSe exhibits the best performance. This result contradicts the findings of previous reports. Additionally, the inverse trends between bandgap and photoresponsivity with increasing x suggest that GaS1−xSex-based photodetectors could potentially offer a high response and wavelength-selectivity for UV and visible light detection. Thus, this work provides novel insights into the photoelectric characteristics of GaS1−xSex layered crystals and highlights their potential for optoelectronic applications.

show abstract