2007
DOI: 10.1016/j.tsf.2006.11.106
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Structural and optical properties of the SiO2–P2O5 films obtained by sol–gel method

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Cited by 19 publications
(13 citation statements)
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“…Previously SiO 2 /P 2 O 5 silicophosphate compounds have been obtained with a sol-gel method using TEOS as the source of the SiO 2 and H 3 PO 4 as the source of P 2 O 5 [2,7,9]. Massiot et al [9] observed that the amorphous character of SiO 2 -P 2 O 5 powders obtained by the sol-gel route gradually decreased during the heat treatment process.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…Previously SiO 2 /P 2 O 5 silicophosphate compounds have been obtained with a sol-gel method using TEOS as the source of the SiO 2 and H 3 PO 4 as the source of P 2 O 5 [2,7,9]. Massiot et al [9] observed that the amorphous character of SiO 2 -P 2 O 5 powders obtained by the sol-gel route gradually decreased during the heat treatment process.…”
Section: Resultsmentioning
confidence: 99%
“…Sol-gel processes can provide low-temperature and convenient processing routes to mix materials into sol solution, and subsequently into a gel. Various silicates containing phosphorus(silicophosphate) compounds have been prepared by sol-gel processes [6,7]. When tetraethoxysilane (TEOS) and H 3 PO 4 were used as the precursors with specific precursors/solvent (ethanol/ water) molar ratios, gelation took place due to the strongly acidic character of the phosphoric acid [8,9].…”
Section: Introductionmentioning
confidence: 99%
“…Therefore, the synthesis and characterization of vitreous silicophosphate compounds prepared by sol-gel processes, using different SiO 2 :P 2 O 5 ratios and precursors have deserved the attention from several authors [9][10][11][12][13][14][15][16][17][18][19][20].…”
Section: Introductionmentioning
confidence: 99%
“…The amounts of isolated phosphoric acid, i.e. Q°C units and the absorbed water in the gels determine the proton conductivity of the phosphorsilicate gels [5] Our previous investigations on SiO 2 -P 2 O 5 films obtained by sol-gel method using alkoxides and phosphoric acid as P precursors showed a pronounced tendency of the alkoxides to be evaporated from the system [6][7][8][9]. In this paper we report the influence of the chemical and structural changes occurred by using different P-precursors on the electrical properties of the SiO 2 -P 2 O 5 films prepared by sol gel.…”
mentioning
confidence: 99%
“…Thickness and porosity were determined based on spectroscopic ellipsometry (SE) measurements. Details regarding the SE data analysis can be found in our previous papers [6][7][8][9]. The solutions obtained starting with phosphorus alkoxides were kept at room temperature for 24 h before deposition.…”
mentioning
confidence: 99%