Structural and optical properties of nanophase zinc oxide

Du, You Wei; Zhang, M.-S.; Hong, Jianming; Shen, Yi; Chen, Q.; Yin, Zuowei

doi:10.1007/s003390201404

Cited by 143 publications

(73 citation statements)

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“…Such broadening of Raman peaks in ZnO nanoparticles compared with those of ZnO crystals [34] could be a result of the confinement of optical phonons, oxygen deficiencies, and residual stress in the ZnO nanoparticles. [30,35,36] However, no remarkable red-shift of the peak position is found, compared to previous reports. [32,33,35] In Figure 3b, for the sample coated with Zn for 1 min, no obvious PL peak is observed because of the low concentration of ZnO nanoparticles and limited sensitivity of our PL detector.…”

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confidence: 69%

“…[21,[37][38][39] The broad yellow-green band is generally attributed to the oxygen vacancies and/or interstitial Zn ions in the ZnO lattice. [22,25,36,37] Furthermore, it is worth noting that in our case the ratio of blue-band intensity to yellow-green-band intensity increases with the particle size. This observation is similar to the results obtained for ZnO nanowires [40,41] and quantum dots, [42] suggesting that surface recombination may also play an important role in the broad yellow-green emission of this ZnO/MWNT hybrid system.…”

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confidence: 96%

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Multiwalled Carbon Nanotubes Beaded with ZnO Nanoparticles for Ultrafast Nonlinear Optical Switching

et al. 2006

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A hybrid system of ZnO nanoparticles on multiwalled carbon nanotubes (MWNTs) is fabricated by simply heating Zn‐coated MWNTs on a hot plate in air. Ultrafast optical switching and three‐photon adsorption are observed from this hybrid system, and the absorption coefficient can be readily adjusted by changing the Zn‐coating thickness. These results provide opportunities for cost‐effectively integrating carbon nanotubes with functional oxide nanoparticles in future nanodevices.

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confidence: 69%

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confidence: 96%

Multiwalled Carbon Nanotubes Beaded with ZnO Nanoparticles for Ultrafast Nonlinear Optical Switching

et al. 2006

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“…[18,19] The peaks at 436.5 and 332 cm ±1 can be assigned to the E 2 and 2E 2 modes, respectively. Compared to previous results, [20,21] the Raman peaks of our ZnO nanowires are redshifted slightly, by about 3 cm ±1 (see Table 1). Previous reports [22,23] suggested that this behavior is in accord with the spatial-correlation or phonon-confinement model.…”

Section: Resultsmentioning

confidence: 46%

“…Also, phonon confinement effect can lead to broadening and asymmetry of the Raman peaks. Du and coworkers [21] reported that the Raman lines of ZnO nanoparticles are slightly broader and asymmetrical with respect to those of ZnO crystals. [24] When the grain size of ZnO nanoparticles is smaller than 21 nm, the full width at half maximum (FWHM) of the E 2 mode becomes broader rapidly, reaching 11 cm ±1 for a grain size of 10 nm.…”

Section: Resultsmentioning

confidence: 99%

Well‐Aligned ZnO Nanowire Arrays Fabricated on Silicon Substrates

Geng

Jiang

Yao

et al. 2004

Adv Funct Materials

283

233

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Arrays of well‐aligned single‐crystal zinc oxide (ZnO) nanowires of uniform diameter and length have been synthesized on a (100) silicon substrate via a simple horizontal double‐tube system using chemical vapor transport and condensation method. X‐ray diffraction and transmission electron microscopy (TEM) characterizations showed that the as‐grown nanowires had the single‐crystal hexagonal wurtzite structure with detectable defects and a <0002> growth direction. Raman spectra revealed phonon confinement effect when compared with those of ZnO bulk powder, nanoribbons, and nanoparticles. Photoluminescence exhibited strong ultraviolet emission at 3.29 eV under 355 nm excitation and green emission at 2.21 eV under 514.5 nm excitation. No catalyst particles were found at the tip of the nanowires, suggesting that the growth mechanism followed a self‐catalyzed and saturated vapor–liquid–solid (VLS) model. Self‐alignment of nanowires was attributed to the local balance and steady state of vapor flow at the substrate. The growth technique would be of particular interest for direct integration in the current silicon‐technology‐based optoelectronic devices.

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“…As to the host, the preferential selection is TiO 2 [3], ZnO [4], SnO 2 [5] and ZrO 2 [6]. Among these, zirconium oxide is a potential selection to being the host for RE ions in the field of photonics due to the superior electrical, chemical and mechanical characteristics.…”

Section: Introductionmentioning

confidence: 99%