Structural and optical properties of vapor-etched porous GaAs

Smida, A.; Laatar, Fakher; Hassen, M.; Ezzaouia, Hatem

doi:10.1016/j.jlumin.2016.03.022

Cited by 13 publications

(1 citation statement)

References 36 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Considering III-V semiconductors, especially, gallium arsenide (GaAs) is the most important representative due to its use in high-efficiency solar cell [4]. In this regard, GaAs has been subject of intensive research in both experimentally and theoretically to understand the structural, mechanical, thermal and electronic properties and demonstrate a highly efficient properties of this material [5][6][7][8][9][10][11].…”

Section: Introductionmentioning

confidence: 99%

MOLECULAR DYNAMICS STUDY ON THE STRUCTURAL, THERMAL AND ENERGETIC PROPERTIES OF GaAs NANOPARTICLES

Kurban¹

2018

Anadolu University Journal of Science and Technology-a Applied Sciences and Engineering

View full text Add to dashboard Cite

In this work, the structural and energetic properties of GaAs nanoparticles (NPs) are investigated using the bond order potential (BOP) based on modern classical molecular dynamics (MD) method. All MD simulations are performed by means of LAMMPS (large-scale atomic/molecular massively parallel simulator). Some physical properties such as variation of potential energy depending on temperature, order parameter, coordination number in terms of probability distribution and radial distribution function (RDF) are searched. The heat capacity () calculation is also performed as depending on temperature using a nonequilibrated molecular dynamics simulation strategy. The tendency of Ga and As atoms inside the core has been observed under temperature increase. As atoms have significant effect on the stability of GaAs NPs. Temperature dependence of these physical properties was obtained. The calculated physical properties are found to be sensitive to temperature.

show abstract