Structural and optical properties of Cu2SnS3 and Cu3SnS4 thin films by successive ionic layer adsorption and reaction

Guan, Hao; Shen, Honglie; Gao, Chao; He, Xiancong

doi:10.1007/s10854-012-0960-x

Cited by 77 publications

(43 citation statements)

References 12 publications

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“…This finding confirms the tunability of the optical response of these films and it is explainable taking into account the very low Zn content of this sample; indeed band gap values ranging between 1.05 and 1.22 eV are reported for crystalline Cu-Sn sulphides [34]. Also other samples with a very low Zn content and various compositions show similar optical gap values.…”

Section: Electroplating Of Nanostructures 250supporting

confidence: 87%

One-Step Electrodeposition of CZTS for Solar Cell Absorber Layer

Farinella¹,

Livreri²,

Piazza³

et al. 2015

Electroplating of Nanostructures

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CZTS thin films were obtained by one-step electrochemical deposition from aqueous solution at room temperature. Films were deposited on two different substrates, ITO on PET, and electropolished Mo. Differently from previous studies focusing exclusively on the formation of kesterite (Cu 4 ZnSnS 4 ), here, the synthesis of a phase with this exact composition was not considered as the unique objective. Really, starting from different baths, amorphous semiconducting layers containing copper-zinc-tinsulphur with atomic fraction Cu 0.592 Zn 0.124 Sn 0.063 S 0.221 and Cu 0.415 Zn 0.061 Sn 0.349 S 0.175 , were potentiostatically deposited. Due to the amorphous nature, it was not possible to detect if one or more phases were formed. By photoelectrochemical measurements, we evaluated optical gap values between 1.5 eV, similar to that assigned to kesterite, and 1.0 eV. Reproducibility and adhesion to the substrate were solved by changing S with Se. Preliminary results showed that an amorphous p-type layer, having atomic fraction Cu 0.434 Zn 0.036 Sn 0.138 Se 0.392 and an optical gap of 1.33 eV, can be obtained by one-step electrochemical deposition.

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Section: Electroplating Of Nanostructures 250supporting

confidence: 87%

One-Step Electrodeposition of CZTS for Solar Cell Absorber Layer

Farinella¹,

Livreri²,

Piazza³

et al. 2015

Electroplating of Nanostructures

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“…[7], instead of the orthorhombic one (Pmn21). 15 toward low diffraction angles with Sn content increasing (see Fig.1b).…”

Section: Xrd and Composition Analysesmentioning

confidence: 99%

“…The main drawback of restricting the applications of Cu-Sn-S compounds in thermoelectrics is their low electrical conductivities (σ) likely due to their wide bandgap (0.93-1.35 eV for Cu 2 SnS 3 , 6,7 1.0~1.80 eV for Cu 3 SnS 4 15-17 and 0.8 eV for Cu 4 Sn 7 S 16 3 ), and inharmonious relation of the Seebeck coefficient (α) and carrier concentration (n H ). Hence it is challenging to significantly improve their TE performance, which is described by the dimensionless figure of merit (ZT), ZT=Tα 2 σ / κ = Tα 2 σ / (κ e +κ L ).…”

Section: Introductionmentioning

confidence: 99%

Enhancing the thermoelectric performance of Cu₃SnS₄-based solid solutions through coordination of the Seebeck coefficient and carrier concentration

et al. 2017

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“…The Raman peaks at 297 cm −1 , 336 cm −1 and 351 cm −1 correspond to the tetragonal phase of CTS. 19 Absence of extra peaks confirms the absence of secondary phases like Cu 2−x S (475 cm −1 ). In our present case CTS is having tetragonal crystal structure with space group I-42m (No.…”

Section: Cu 2 Sns 3 Precursor Reaction Mechanismmentioning

confidence: 84%

Solution processed Cu2SnS3 thin films for visible and infrared photodetector applications

Dias

Krupanidhi

2016

AIP Advances

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The Cu2SnS3 thin films were deposited using an economic, solution processible, spin coating technique. The films were found to possess a tetragonal crystal structure using X-ray diffraction. The film morphology and the particle size were determined using scanning electron microscopy. The various planes in the crystal were observed using transmission electron microscopy. The optimum band gap of 1.23 eV and a high absorption coefficient of 104 cm−1 corroborate its application as a photoactive material. The visible and infrared (IR) photo response was studied for various illumination intensities. The current increased by one order from a dark current of 0.31 μA to a current of 1.78 μA at 1.05 suns and 8.7 μA under 477.7 mW/cm2 IR illumination intensity, at 3 V applied bias. The responsivity, sensitivity, external quantum efficiency and specific detectivity were found to be 10.93 mA/W, 5.74, 2.47% and 3.47 × 1010 Jones respectively at 1.05 suns and 16.32 mA/W, 27.16, 2.53% and 5.10 × 1010 Jones respectively at 477.7 mW/cm2 IR illumination. The transient photoresponse was measured both for visible and IR illuminations.

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Structural and optical properties of Cu2SnS3 and Cu3SnS4 thin films by successive ionic layer adsorption and reaction

Cited by 77 publications

References 12 publications

One-Step Electrodeposition of CZTS for Solar Cell Absorber Layer

One-Step Electrodeposition of CZTS for Solar Cell Absorber Layer

Enhancing the thermoelectric performance of Cu₃SnS₄-based solid solutions through coordination of the Seebeck coefficient and carrier concentration

Solution processed Cu2SnS3 thin films for visible and infrared photodetector applications

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Structural and optical properties of Cu2SnS3 and Cu3SnS4 thin films by successive ionic layer adsorption and reaction

Cited by 77 publications

References 12 publications

One-Step Electrodeposition of CZTS for Solar Cell Absorber Layer

One-Step Electrodeposition of CZTS for Solar Cell Absorber Layer

Enhancing the thermoelectric performance of Cu3SnS4-based solid solutions through coordination of the Seebeck coefficient and carrier concentration

Solution processed Cu2SnS3 thin films for visible and infrared photodetector applications

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Enhancing the thermoelectric performance of Cu₃SnS₄-based solid solutions through coordination of the Seebeck coefficient and carrier concentration