2014
DOI: 10.1016/j.egypro.2013.12.008
|View full text |Cite
|
Sign up to set email alerts
|

Structural and Optical Properties of the New Absorber Cu2ZnSnS4 Thin Films Grown by Vacuum Evaporation Method

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

1
10
0

Year Published

2016
2016
2023
2023

Publication Types

Select...
9
1

Relationship

0
10

Authors

Journals

citations
Cited by 58 publications
(11 citation statements)
references
References 28 publications
1
10
0
Order By: Relevance
“…It should be noted that stoichiometry of studied films is some improved during the increasing of dispersed precursor volume. Also, the obtained ratio γ CZTS_1 = (0.80-0.84) in CZTS films deposited at precursor dispersion with volume of V s = 2-3 ml is close to the optimal values necessary to develop SCs with high solar energy conversion efficiency (γ CZTS_1 = (0.8-0.9), γ CZTS_2 = (1.1-1.2)) [40,42]. For film obtained by dispersion precursor volume of 3 ml for this requirement corresponds the next ratio-γ CZTS_2 = 1.2.…”
Section: The Study Of the Stoichiometrysupporting
confidence: 69%
“…It should be noted that stoichiometry of studied films is some improved during the increasing of dispersed precursor volume. Also, the obtained ratio γ CZTS_1 = (0.80-0.84) in CZTS films deposited at precursor dispersion with volume of V s = 2-3 ml is close to the optimal values necessary to develop SCs with high solar energy conversion efficiency (γ CZTS_1 = (0.8-0.9), γ CZTS_2 = (1.1-1.2)) [40,42]. For film obtained by dispersion precursor volume of 3 ml for this requirement corresponds the next ratio-γ CZTS_2 = 1.2.…”
Section: The Study Of the Stoichiometrysupporting
confidence: 69%
“…The value of D increases with increase of annealing temperature. The dislocation density, lattice strain, micro strain, and stacking fault for the present series samples are extracted from d = 1/D 2 (Sathyamoorthy et al 2006;Sharma et al 2011;Touati et al 2014;Bindu and Thomas 2014), e = b/ 4 9 tanh (Thool et al 2014), e = b 9 cosh/4 (Sathyamoorthy et al 2006;Sharma et al 2011) and SF = 2p 2 /45H(3tanh) (Touati et al 2014;Thool et al 2014), respectively, and their values are given in Table 1. From Table 1 we notice that the dislocation density, lattice strain, micro strain, and stacking fault for the annealed samples decrease with the increase of annealing temperature.…”
Section: Resultsmentioning
confidence: 99%
“…Nevertheless, the non-toxicity and abundance of the elemental composition of copper-zinc-tin-sulfide (CZTS) makes it a very fascinating alternative of Cu(In,Ga)Se 2 (CIGS) and CdTe solar cells which suffer from the deficiency and toxicity of the elements. CZTS is reported to have a band gap of about 1.5 eV and an absorption coefficient of about 10 4 Cm -1 which makes it highly attractive as a solar cell material [1][2][3]. The CZTS absorber layers are prepared by various formation methods, such as thermal evaporation [4,5], e-beam evaporation with a post sulfurization [6], sputtering [7][8][9], pulsed laser [10], electrochemical deposition [11][12][13] and spin coating methods [14].…”
Section: Introduction mentioning
confidence: 99%